Rf front-end module

ABSTRACT

A front-end module (FEM) includes first and second frequency band power amplifiers (PA), first and second frequency band receiver-transmitter (RX-TX) isolation modules, and an antenna interface unit. The PAs are operable to amplify first and second frequency band outbound RF signals, respectively. The RX-TX isolation modules are operable to isolate first and second frequency band inbound RF signals from first and second frequency band outbound RF signals in accordance with first and second frequency band isolation tuning signal, respectively. The antenna interface unit is operably tuned in accordance with an antenna interface tuning signal to output at least one of the first frequency band outbound RF signal and the second frequency band outbound RF signal and to receive at least one of the first frequency band inbound RF signal and the second frequency band inbound RF signal.

CROSS REFERENCE TO RELATED PATENTS

This patent application is claiming priority under 35 U.S.C. §120 as acontinuation-in-part patent application of co-pending patent applicationentitled, “SAW-LESS RECEIVER WITH OFFSET RF FREQUENCY TRANSLATED BPF,”having a filing date of Mar. 24, 2011, and a serial number of 13/070,980(Attorney Docket No. BP22165), and which claims priority under 35 U.S.C.§119(e) to a provisionally filed patent application entitled,“CONFIGURABLE AND SCALABLE RF FRONT-END MODULE,” having a provisionalfiling date of Jun. 3, 2010, and a provisional Ser. No. 61/351,284(Attorney Docket No. 21922), pending, all of which are incorporatedherein by reference in their entirety and made part of the present U.S.Utility patent application for all purposes.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

Not Applicable

INCORPORATION-BY-REFERENCE OF MATERIAL SUBMITTED ON A COMPACT DISC

Not Applicable

BACKGROUND OF THE INVENTION

1. Technical Field of the Invention

This invention relates generally to wireless communications and moreparticularly to radio transceivers.

2. Description of Related Art

Communication systems are known to support wireless and wire linedcommunications between wireless and/or wire lined communication devices.Such communication systems range from national and/or internationalcellular telephone systems to the Internet to point-to-point in-homewireless networks. Each type of communication system is constructed, andhence operates, in accordance with one or more communication standards.For instance, wireless communication systems may operate in accordancewith one or more standards including, but not limited to, IEEE 802.11,Bluetooth, advanced mobile phone services (AMPS), digital AMPS, globalsystem for mobile communications (GSM), code division multiple access(CDMA), local multi-point distribution systems (LMDS),multi-channel-multi-point distribution systems (MMDS), radio frequencyidentification (RFID), Enhanced Data rates for GSM Evolution (EDGE),General Packet Radio Service (GPRS), WCDMA, LTE (Long Term Evolution),WiMAX (worldwide interoperability for microwave access), and/orvariations thereof.

Depending on the type of wireless communication system, a wirelesscommunication device, such as a cellular telephone, two-way radio,personal digital assistant (PDA), personal computer (PC), laptopcomputer, home entertainment equipment, RFID reader, RFID tag, et ceteracommunicates directly or indirectly with other wireless communicationdevices. For direct communications (also known as point-to-pointcommunications), the participating wireless communication devices tunetheir receivers and transmitters to the same channel or channels (e.g.,one of the plurality of radio frequency (RF) carriers of the wirelesscommunication system or a particular RF frequency for some systems) andcommunicate over that channel(s). For indirect wireless communications,each wireless communication device communicates directly with anassociated base station (e.g., for cellular services) and/or anassociated access point (e.g., for an in-home or in-building wirelessnetwork) via an assigned channel. To complete a communication connectionbetween the wireless communication devices, the associated base stationsand/or associated access points communicate with each other directly,via a system controller, via the public switch telephone network, viathe Internet, and/or via some other wide area network.

For each wireless communication device to participate in wirelesscommunications, it includes a built-in radio transceiver (i.e., receiverand transmitter) or is coupled to an associated radio transceiver (e.g.,a station for in-home and/or in-building wireless communicationnetworks, RF modem, etc.). As is known, the receiver is coupled to anantenna and includes a low noise amplifier, one or more intermediatefrequency stages, a filtering stage, and a data recovery stage. The lownoise amplifier receives inbound RF signals via the antenna andamplifies then. The one or more intermediate frequency stages mix theamplified RF signals with one or more local oscillations to convert theamplified RF signal into baseband signals or intermediate frequency (IF)signals. The filtering stage filters the baseband signals or the IFsignals to attenuate unwanted out of band signals to produce filteredsignals. The data recovery stage recovers data from the filtered signalsin accordance with the particular wireless communication standard.

As is also known, the transmitter includes a data modulation stage, oneor more intermediate frequency stages, and a power amplifier. The datamodulation stage converts data into baseband signals in accordance witha particular wireless communication standard. The one or moreintermediate frequency stages mix the baseband signals with one or morelocal oscillations to produce RF signals. The power amplifier amplifiesthe RF signals prior to transmission via an antenna.

To implement a radio transceiver, a wireless communication deviceincludes a plurality of integrated circuits (ICs) and a plurality ofdiscrete components. FIG. 1 illustrates an example of a wirelesscommunication device that supports 2G and 3G cellular telephoneprotocols. As shown, the wireless communication device includes abaseband processing IC, a power management IC, a radio transceiver IC, atransmit/receive (T/R) switch, an antenna, and a plurality of discretecomponents. The discrete components include surface acoustic wave (SAW)filters, power amplifiers, duplexers, inductors, and capacitors. Suchdiscrete components add several dollars (US) to the bill of material forthe wireless communication device, but are necessary to achieve thestrict performance requirements of the 2G and 3G protocols.

As integrated circuit fabrication technology evolves, wirelesscommunication device manufacturers require that wireless transceiver ICmanufacturers update their ICs in accordance with the advancements in ICfabrication. For example, as the fabrication process changes (e.g., usessmaller transistor sizes), the wireless transceiver ICs are redesignedfor the newer fabrication process. Redesigning the digital portions ofthe ICs is a relatively straightforward process since most digitalcircuitry “shrinks” with the IC fabrication process. Redesigning theanalog portions, however, is not a straightforward task since mostanalog circuitry (e.g., inductors, capacitors, etc.) does not “shrink”with the IC process. As such, wireless transceiver IC manufacturersinvest significant effort to produce ICs of newer IC fabricationprocesses.

BRIEF SUMMARY OF THE INVENTION

The present invention is directed to apparatus and methods of operationthat are further described in the following Brief Description of theDrawings, the Detailed Description of the Invention, and the claims.Other features and advantages of the present invention will becomeapparent from the following detailed description of the invention madewith reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING(S)

FIG. 1 is a schematic block diagram of a prior art wirelesscommunication device;

FIG. 2 is a schematic block diagram of an embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 3 is a schematic block diagram of another embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 4 is a schematic block diagram of another embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 5 is a schematic block diagram of another embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 6 is a schematic block diagram of another embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 7 is a schematic block diagram of another embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 8 is a schematic block diagram of another embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 9 is a schematic block diagram of another embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 10 is a schematic block diagram of another embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 11 is a schematic block diagram of another embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 12 is a schematic block diagram of another embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 13 is a schematic block diagram of another embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 14 is a schematic block diagram of another embodiment of a portablecomputing communication device in accordance with the present invention;

FIG. 15 is a schematic block diagram of an embodiment of an RF to IFreceiver section of an SOC in accordance with the present invention;

FIG. 16 is a schematic block diagram of another embodiment of an RF toIF receiver section of an SOC in accordance with the present invention;

FIG. 17 is a schematic block diagram of another embodiment of an RF toIF receiver section of an SOC in accordance with the present invention;

FIG. 18 is a schematic block diagram of another embodiment of an RF toIF receiver section of an SOC in accordance with the present invention;

FIG. 19 is a schematic block diagram of another embodiment of an RF toIF receiver section of an SOC in accordance with the present invention;

FIG. 20 is a schematic block diagram of another embodiment of an RF toIF receiver section of an SOC in accordance with the present invention;

FIG. 21 is a schematic block diagram of another embodiment of an RF toIF receiver section of an SOC in accordance with the present invention;

FIG. 22 is a schematic block diagram of another embodiment of an RF toIF receiver section of an SOC in accordance with the present invention;

FIG. 23 is a schematic block diagram of an embodiment of a transmittersection of an SOC in accordance with the present invention;

FIG. 24 is a schematic block diagram of an embodiment of a transmittersection of an SOC in accordance with the present invention;

FIG. 25 is a schematic block diagram of an embodiment of a portion of anRF to IF receiver section that includes an FTBPF (frequency translatedbandpass filter) in accordance with the present invention;

FIG. 26 is a schematic block diagram of an embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 27 is a diagram of an example of frequency responses for the RF toIF receiver section in accordance with the present invention;

FIG. 28 is a schematic block diagram of an embodiment of an FTBPF inaccordance with the present invention;

FIG. 29 is a diagram of an example of phase and frequency responses forthe baseband component of the FTBPF in accordance with the presentinvention;

FIG. 30 is a diagram of an example of phase and frequency responses forthe RF component of the FTBPF in accordance with the present invention;

FIG. 31 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF (frequencytranslated bandpass filter) in accordance with the present invention;

FIG. 32 is a schematic block diagram of another embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 33 is a diagram of another example of frequency responses for theRF to IF receiver section in accordance with the present invention;

FIG. 34 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF (frequencytranslated bandpass filter) in accordance with the present invention;

FIG. 35 is a schematic block diagram of another embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 36 is a diagram of another example of frequency responses for theRF to IF receiver section in accordance with the present invention;

FIG. 37 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF (frequencytranslated bandpass filter) in accordance with the present invention;

FIG. 38 is a schematic block diagram of another embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 39 is a diagram of another example of frequency responses for theRF to IF receiver section in accordance with the present invention;

FIG. 40 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF (frequencytranslated bandpass filter) in accordance with the present invention;

FIG. 41 is a schematic block diagram of another embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 42 is a diagram of another example of frequency responses for theRF to IF receiver section in accordance with the present invention;

FIG. 43 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF (frequencytranslated bandpass filter) in accordance with the present invention;

FIG. 44 is a schematic block diagram of another embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 45 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF (frequencytranslated bandpass filter) in accordance with the present invention;

FIG. 46 is a schematic block diagram of another embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 47 is a schematic block diagram of an embodiment of a complexbaseband (BB) filter in accordance with the present invention;

FIG. 48 is a diagram of an example of converting the frequency responseof the complex BB filter into the frequency response for a high-Q RFfilter in accordance with the present invention;

FIG. 49 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF (frequencytranslated bandpass filter) in accordance with the present invention;

FIG. 50 is a schematic block diagram of another embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 51 is a diagram of another example of frequency responses for theRF to IF receiver section in accordance with the present invention;

FIG. 52 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF (frequencytranslated bandpass filter) in accordance with the present invention;

FIG. 53 is a schematic block diagram of another embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 54 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF (frequencytranslated bandpass filter) in accordance with the present invention;

FIG. 55 is a schematic block diagram of another embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 56 is a schematic block diagram of an embodiment of a negativeresistance in accordance with the present invention;

FIG. 57 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF (frequencytranslated bandpass filter) in accordance with the present invention;

FIG. 58 is a schematic block diagram of another embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 59 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF (frequencytranslated bandpass filter) in accordance with the present invention;

FIG. 60 is a schematic block diagram of another embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 61 is a diagram of an example of a frequency response for a firstLO of an the RF to IF receiver section in accordance with the presentinvention;

FIG. 62 is a diagram of an example of a frequency response for a secondLO of an the RF to IF receiver section in accordance with the presentinvention;

FIG. 63 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF (frequencytranslated bandpass filter) in accordance with the present invention;

FIG. 64 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes a mixer in accordance withthe present invention;

FIG. 65 is a schematic block diagram of another embodiment of a clockgenerator for the RF to IF receiver section in accordance with thepresent invention;

FIG. 66 is a schematic block diagram of an embodiment of atransimpedance amplifier (TIA) in accordance with the present invention;

FIG. 67 is a schematic block diagram of an embodiment of a low noiseamplifier (LNA) that includes an FTBPF in accordance with the presentinvention;

FIG. 68 is a schematic block diagram of an embodiment of a 4-phase FTBPF(frequency translated bandpass filter) in accordance with the presentinvention;

FIG. 69 is a diagram of an example of a frequency response for a 4-phaseFTBPF in accordance with the present invention;

FIG. 70 is a schematic block diagram of another embodiment of a 3-phaseFTBPF (frequency translated bandpass filter) in accordance with thepresent invention;

FIG. 71 is a diagram of an example of clock signals for a 3-phase FTBPFin accordance with the present invention;

FIG. 72 is a diagram of an example of a frequency response for a 3-phaseFTBPF in accordance with the present invention;

FIG. 73 is a schematic block diagram of another embodiment of a 4-phaseFTBPF (frequency translated bandpass filter) in accordance with thepresent invention;

FIG. 74 is a schematic block diagram of another embodiment of a 4-phaseFTBPF (frequency translated bandpass filter) in accordance with thepresent invention;

FIG. 75 is a schematic block diagram of another embodiment of a 4-phaseFTBPF (frequency translated bandpass filter) in accordance with thepresent invention;

FIG. 76 is a schematic block diagram of another embodiment of a 4-phaseFTBPF (frequency translated bandpass filter) in accordance with thepresent invention;

FIG. 77 is a schematic block diagram of an embodiment of a complexbaseband impedance for an FTBPF (frequency translated bandpass filter)in accordance with the present invention;

FIG. 78 is a schematic block diagram of an embodiment of a 4-phase FTBPF(frequency translated bandpass filter) in accordance with the presentinvention;

FIG. 79 is a schematic block diagram of an embodiment of an m-phaseFTBPF (frequency translated bandpass filter) in accordance with thepresent invention;

FIG. 80 is a schematic block diagram of an embodiment of an m-phaseFTBPF (frequency translated bandpass filter) in accordance with thepresent invention;

FIG. 81 is a schematic block diagram of an embodiment of an m-phaseFTBPF (frequency translated bandpass filter) in accordance with thepresent invention;

FIG. 82 is a schematic block diagram of an embodiment of an m-phaseFTBPF (frequency translated bandpass filter) in accordance with thepresent invention;

FIG. 83 is a schematic block diagram of an embodiment of an m-phaseFTBPF (frequency translated bandpass filter) in accordance with thepresent invention;

FIG. 84 is a diagram of an example of a frequency response for anm-phase FTBPF in accordance with the present invention;

FIG. 85 is a schematic block diagram of an embodiment of a clockgenerator for an m-phase FTBPF in accordance with the present invention;

FIG. 86 is a schematic block diagram of another embodiment of a clockgenerator for an m-phase FTBPF in accordance with the present invention;

FIG. 87 is a schematic block diagram of another embodiment of a clockgenerator for an m-phase FTBPF in accordance with the present invention;

FIG. 88 is a schematic block diagram of an embodiment of a clockgenerator for a 3-phase FTBPF in accordance with the present invention;

FIG. 89 is a schematic block diagram of another embodiment of a clockgenerator for a 3-phase FTBPF in accordance with the present invention;

FIG. 90 is a schematic block diagram of an embodiment of a portion ofeach of a front-end module (FEM) and an SOC in accordance with thepresent invention;

FIG. 91 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM) and an SOC in accordance with thepresent invention;

FIG. 92 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM) and an SOC in accordance with thepresent invention;

FIG. 93 is a schematic block diagram of an embodiment of a portion ofeach of a front-end module (FEM) and an SOC in 2G TX mode in accordancewith the present invention;

FIG. 94 is a schematic block diagram of an embodiment of a portion ofeach of a front-end module (FEM) and an SOC in 2G RX mode in accordancewith the present invention;

FIG. 95 is a schematic block diagram of an embodiment of a small signalbalancing network in accordance with the present invention;

FIG. 96 is a schematic block diagram of an embodiment of a large signalbalancing network in accordance with the present invention;

FIG. 97 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM) and an SOC in accordance with thepresent invention;

FIG. 98 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM) and an SOC in accordance with thepresent invention;

FIG. 99 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM) and an SOC in accordance with thepresent invention;

FIG. 100 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM) and an LNA in accordance with thepresent invention;

FIG. 101 is a schematic block diagram of an embodiment of an equivalentcircuit of a portion of each of a front-end module (FEM) and an LNA inaccordance with the present invention;

FIG. 102 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM) and an LNA in accordance with thepresent invention;

FIG. 103 is a schematic block diagram of an embodiment of a transformerbalun in accordance with the present invention;

FIG. 104 is a diagram of an example of an implementation of atransformer balun in accordance with the present invention;

FIG. 105 is a diagram of another example of an implementation of atransformer balun in accordance with the present invention;

FIG. 106 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM) and an LNA in accordance with thepresent invention;

FIG. 107 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM) and an LNA in accordance with thepresent invention;

FIG. 108 is a schematic block diagram of an embodiment of an impedancein accordance with the present invention;

FIG. 109 is a schematic block diagram of another embodiment of animpedance in accordance with the present invention;

FIG. 110 is a schematic block diagram of an embodiment of a balancenetwork in accordance with the present invention;

FIG. 111 is a schematic block diagram of another embodiment of a balancenetwork in accordance with the present invention;

FIG. 112 is a schematic block diagram of an embodiment of a negativeimpedance in accordance with the present invention;

FIG. 113 is a schematic block diagram of an embodiment of a polarreceiver in accordance with the present invention;

FIG. 114 is a schematic block diagram of an embodiment of a buffercircuit in accordance with the present invention;

FIG. 115 is a schematic block diagram of an embodiment of a weavedconnection in accordance with the present invention; and

FIG. 116 is a schematic block diagram of an embodiment of a receiver inaccordance with the present invention.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 2 is a schematic block diagram of an embodiment of a portablecomputing communication device 10 that includes a chip set of a systemon a chip (SOC) 12 and a front-end module (FEM) 14, which may beimplemented on separate integrated circuits. The portable computingcommunication device 10 may be any device that can be carried by aperson, can be at least partially powered by a battery, includes a radiotransceiver (e.g., radio frequency (RF) and/or millimeter wave (MMW))and performs one or more software applications. For example, theportable computing communication device 10 may be a cellular telephone,a laptop computer, a personal digital assistant, a video game console, avideo game player, a personal entertainment unit, a tablet computer,etc.

The SOC 12 includes a SAW-less receiver section 18, a SAW-lesstransmitter section 20, a baseband processing unit 22, a processingmodule 24, and a power management unit 26. The SAW-less receiver 18includes a receiver (RX) radio frequency (RF) to intermediate frequency(IF) section 28 and a receiver (RX) IF to baseband (BB) section 30. TheRX RF to IF section 28 further includes one or more frequency translatedbandpass filters (FTBPF) 32.

The processing module 24 and the baseband processing unit 22 may be asingle processing device, separate processing devices, or a plurality ofprocessing devices. Such a processing device may be a microprocessor,micro-controller, digital signal processor, microcomputer, centralprocessing unit, field programmable gate array, programmable logicdevice, state machine, logic circuitry, analog circuitry, digitalcircuitry, and/or any device that manipulates signals (analog and/ordigital) based on hard coding of the circuitry and/or operationalinstructions. The processing module 24 and/or baseband processing unit22 may have an associated memory and/or memory element, which may be asingle memory device, a plurality of memory devices, and/or embeddedcircuitry of the processing module 24. Such a memory device may be aread-only memory, random access memory, volatile memory, non-volatilememory, static memory, dynamic memory, flash memory, cache memory,and/or any device that stores digital information. Note that if theprocessing module 24 and/or baseband processing unit 22 includes morethan one processing device, the processing devices may be centrallylocated (e.g., directly coupled together via a wired and/or wireless busstructure) or may be distributedly located (e.g., cloud computing viaindirect coupling via a local area network and/or a wide area network).Further note that when the processing module 24 and/or basebandprocessing unit 22 implements one or more of its functions via a statemachine, analog circuitry, digital circuitry, and/or logic circuitry,the memory and/or memory element storing the corresponding operationalinstructions may be embedded within, or external to, the circuitrycomprising the state machine, analog circuitry, digital circuitry,and/or logic circuitry. Still further note that, the memory elementstores, and the processing module 24 and/or baseband processing unit 22executes, hard coded and/or operational instructions corresponding to atleast some of the steps and/or functions illustrated in one or more ofthe Figures.

The front-end module (FEM) 14 includes a plurality of power amplifiers(PA) 34-36, a plurality of receiver-transmitter (RX-TX) isolationmodules 38-40, and an antenna interface unit (which may include aplurality of antenna tuning units (ATU) 42-44 and a frequency band (FB)switch 46). Note that the FEM 14 may include more than two paths of PAs34-36, RX-TX isolation modules 38-40, and ATUs 42-44 coupled to the FBswitch 46, or may include a single path. For example, the FEM 14 mayinclude one path for 2G (second generation) cellular telephone service,another path for 3G (third generation) cellular telephone service, and athird path for wireless local area network (WLAN) service. Of coursethere are a multitude of other example combinations of paths within theFEM 14 to support one or more wireless communication standards (e.g.,IEEE 802.11, Bluetooth, global system for mobile communications (GSM),code division multiple access (CDMA), radio frequency identification(RFID), Enhanced Data rates for GSM Evolution (EDGE), General PacketRadio Service (GPRS), WCDMA, high-speed downlink packet access (HSDPA),high-speed uplink packet access (HSUPA), LTE (Long Term Evolution),WiMAX (worldwide interoperability for microwave access), and/orvariations thereof).

In an example of operation, the processing module 24 is performing oneor more functions of the portable computing device that require wirelesstransmission of data. In this instance, the processing module 24provides the outbound data (e.g., voice, text, audio, video, graphics,etc.) to the baseband processing unit or module 22, which converts theoutbound data into one or more outbound symbol streams in accordancewith one or more wireless communication standards (e.g., GSM, CDMA,WCDMA, HSUPA, HSDPA, WiMAX, EDGE, GPRS, IEEE 802.11, Bluetooth, ZigBee,universal mobile telecommunications system (UMTS), long term evolution(LTE), IEEE 802.16, evolution data optimized (EV-DO), etc.). Such aconversion includes one or more of: scrambling, puncturing, encoding,interleaving, constellation mapping, modulation, frequency spreading,frequency hopping, beamforming, space-time-block encoding,space-frequency-block encoding, frequency to time domain conversion,and/or digital baseband to intermediate frequency conversion. Note thatthe baseband processing unit 22 converts the outbound data into a singleoutbound symbol stream for Single Input Single Output (SISO)communications and/or for Multiple Input Single Output (MISO)communications and converts the outbound data into multiple outboundsymbol streams for Single Input Multiple Output (SIMO) and MultipleInput Multiple Output (MIMO) communications.

The baseband processing unit 22 provides the one or more outbound symbolstreams to the SAW-less transmitter section 20, which converts theoutbound symbol stream(s) into one or more outbound RF signals (e.g.,signals in one or more frequency bands 800 MHz, 1800 MHz, 1900 MHz, 2000MHz, 2.4 GHz, 5 GHz, 60 GHz, etc.). The SAW-less transceiver section 20includes at least one up-conversion module, at least one frequencytranslated bandpass filter (FTBPF), and an output module; which may beconfigured as a direct conversion topology (e.g., direct conversion ofbaseband or near baseband symbol streams to RF signals) or as a superheterodyne topology (e.g., convert baseband or near baseband symbolstreams into IF signals and then convert the IF signals into RFsignals).

For a direction conversion, the SAW-less transmitter section 20 may havea Cartesian-based topology, a polar-based topology, or a hybridpolar-Cartesian-based topology. In a Cartesian-based topology, theSAW-less transmitter section 20 mixes in-phase and quadrature components(e.g., A_(I)(t)cos(ω_(BB)(t)+φ_(I)(t)) andA_(Q)(t)cos(ω_(BB)(t)+φ_(Q)(t)), respectively) of the one or moreoutbound symbol streams with in-phase and quadrature components (e.g.,cos(ω_(RF)(t)) and sin (ω_(RF)(t)), respectively) of one or moretransmit local oscillations (TX LO) to produce mixed signals. The FTBPFfilters the mixed signals and the output module conditions (e.g., commonmode filtering and/or differential to single-ended conversion) them toproduce one or more outbound up-converted signals (e.g.,A(t)cos(ω_(BB)(t)+φ(t))+ω_(RF)(t))). A power amplifier driver (PAD)module amplifies the outbound up-converted signal(s) to produce a pre-PA(power amplified) outbound RF signal(s).

In a phase polar-based topology, the SAW-less transmitter section 20includes an oscillator that produces an oscillation (e.g.,cos(ω_(RF)(t)) that is adjusted based on the phase information (e.g.,+/−Δφ [phase shift] and/or φt) [phase modulation]) of the outboundsymbol stream(s). The resulting adjusted oscillation (e.g.,cos(ω_(RF)(t)+/−Δφ) or cos(ω_(RF)(t)+φ(t)) may be further adjusted byamplitude information (e.g., A(t) [amplitude modulation]) of theoutbound symbol stream(s) to produce one or more up-converted signals(e.g., A(t)cos(ω_(RF)(t)+φ(t)) or A(t)cos(ω_(RF)(t)+/−Δφ)). The FTBPFfilters the one or more up-converted signals and the output moduleconditions (e.g., common mode filtering and/or differential tosingle-ended conversion) them. A power amplifier driver (PAD) modulethen amplifies the outbound up-converted signal(s) to produce a pre-PA(power amplified) outbound RF signal(s).

In a frequency polar-based topology, the SAW-less transmitter section 20includes an oscillator that produces an oscillation (e.g.,cos(ω_(RF)(t)) this is adjusted based on the frequency information(e.g., +/−Δf [frequency shift] and/or f(t)) [frequency modulation]) ofthe outbound symbol stream(s). The resulting adjusted oscillation (e.g.,cos(ω_(RF)(t)+/−Δf) or cos(ω_(RF)(t)+f(t)) may be further adjusted byamplitude information (e.g., A(t) [amplitude modulation]) of theoutbound symbol stream(s) to produce one or more up-converted signals(e.g., A(t)cos(ω_(RF)(t)+f(t)) or A(t)cos(ω_(RF)(t)+/−Δf)). The FTBPFfilters the one or more up-converted signals and the output moduleconditions (e.g., common mode filtering and/or differential tosingle-ended conversion) them. A power amplifier driver (PAD) modulethen amplifies the outbound up-converted signal(s) to produce a pre-PA(power amplified) outbound RF signal(s).

In a hybrid polar-Cartesian-based topology, the SAW-less transmittersection 20 separates the phase information (e.g., cos(ω_(BB)(t)+/−Δφ) orcos(ω_(BB)(t)+φ(t)) and the amplitude information (e.g., A(t)) of theoutbound symbol stream(s). The SAW-less transmitter section 20 mixesin-phase and quadrature components (e.g., cos(ω_(BB)(t)+φ_(I)(t)) andcos(ω_(BB)(t)+φ_(Q)(t)), respectively) of the one or more outboundsymbol streams with in-phase and quadrature components (e.g.,cos(ω_(RF)(t)) and sin(ω_(RF)(t)), respectively) of one or more transmitlocal oscillations (TX LO) to produce mixed signals. The FTBPF filtersthe mixed signals and the output module conditions (e.g., common modefiltering and/or differential to single-ended conversion) them toproduce one or more outbound up-converted signals (e.g.,A(t)cos(ω_(BB)(t)+φ(t))+ω_(RF)(t))). A power amplifier driver (PAD)module amplifies the normalized outbound up-converted signal(s) andinjects the amplitude information (e.g., A(t)) into the normalizedoutbound up-converted signal(s) to produce a pre-PA (power amplified)outbound RF signal(s) (e.g., A(t)cos(ω_(RF)(t)+φ(t))). Other examples ofthe SAW-less transmitter section 20 will be described with reference toFIGS. 23 and 24.

For a super heterodyne topology, the SAW-less transmitter section 20includes a baseband (BB) to intermediate frequency (IF) section and anIF to a radio frequency (RF section). The BB to IF section may be of apolar-based topology, a Cartesian-based topology, a hybridpolar-Cartesian-based topology, or a mixing stage to up-convert theoutbound symbol stream(s). In the three former cases, the BB to IFsection generates an IF signal(s) (e.g., A(t)cos(ω_(IF)(t)+φ(t))) andthe IF to RF section includes a mixing stage, a filtering stage and thepower amplifier driver (PAD) to produce the pre-PA outbound RFsignal(s).

When the BB to IF section includes a mixing stage, the IF to RF sectionmay have a polar-based topology, a Cartesian-based topology, or a hybridpolar-Cartesian-based topology. In this instance, the BB to IF sectionconverts the outbound symbol stream(s) (e.g., A(t)cos((ω_(BB)(t)+φ(t)))into intermediate frequency symbol stream(s) (e.g., A(t)(ω_(IF)(t)+φ(t)). The IF to RF section converts the IF symbol stream(s)into the pre-PA outbound RF signal(s).

The SAW-less transmitter section 20 outputs the pre-PA outbound RFsignal(s) to a power amplifier module (PA) 34-36 of the front-end module(FEM) 14. The PA 34-36 includes one or more power amplifiers coupled inseries and/or in parallel to amplified pre-PA outbound RF signal(s) toproduce an outbound RF signal(s) within a first frequency band and/or asecond frequency band. Note that parameters (e.g., gain, linearity,bandwidth, efficiency, noise, output dynamic range, slew rate, riserate, settling time, overshoot, stability factor, etc.) of the PA 34-36may be adjusted based on control signals received from the basebandprocessing unit 22 and/or the processing module 24. For instance, astransmission conditions change (e.g., channel response changes, distancebetween TX unit and RX unit changes, antenna properties change, etc.),the processing resources (e.g., the BB processing unit 22 and/or theprocessing module 24) of the SOC 12 monitors the transmission conditionchanges and adjusts the properties of the PA 34-36 to optimizeperformance via PA control signals that may be received at a controlsignal port of the FEM. Such a determination may not be made inisolation; for example, it is done in light to other parameters of thefront-end module that may be adjusted (e.g., the ATU 42-44, the RX-TXisolation module 38-40) to optimize transmission and reception of the RFsignals.

Each of the RX-TX isolation modules 38-40 (which may include a duplexer,a circulator, a transformer, a balance network, a common mode sensecircuit, and/or other device that provides isolation between a TX signaland an RX signal using a common antenna) attenuates the outbound RFsignal(s) with respect to its RX output to isolate the inbound RF signalfrom the outbound RF signal. The RX-TX isolation module 38-40 mayadjusts it attenuation of the outbound RF signal(s) (i.e., the TXsignal) based on isolation control signals received at a port of the FEMfrom the baseband processing unit and/or the processing module 24 of theSOC 12. For example, when the transmission power is relatively low, theRX-TX isolation module 38-40 may be adjusted to reduce its attenuationof the TX signal. At least one embodiment of the RX-TX isolation module38-40 is provided in one or more of the subsequent figures.

Each of the antenna tuning units (ATU) 42-44 is tuned to provide adesired impedance that substantially matches that of the antenna 16. Astuned, the ATU 42-44 provides the attenuated TX signal from the RX-TXisolation module 38-40 to the antenna 16 for transmission. Note that theATU 42-44 may be continually or periodically adjusted to track impedancechanges of the antenna 16 via ATU control signals received via an FEMport. For example, the baseband processing unit 22 and/or the processingmodule 24 may detect a change in the impedance of the antenna 16 and,based on the detected change, provide control signals to the ATU 42-44such that it changes it impedance accordingly. At least one embodimentof the ATU 42-44 is provided in one or more of the subsequent figures.

In this example, the SAW-less transmitter 20 section has two outputs:one for a first frequency band and the other for a second frequencyband. The preceding discussion has focused on the process of convertingoutbound data into outbound RF signals for a single frequency band(e.g., 850 MHz, 900 MHz, etc.). The process is similar for convertingoutbound data into RF signals for the other frequency band (e.g., 1800MHz, 1900 MHz, 2100 MHz, 2.4 GHz, 5 GHz, etc.). Note that with a singleantenna 16, the SAW-less transmitter 20 generates outbound RF signals inor of the other frequency band. The frequency band (FB) switch 46 of theFEM 14 couples the antenna 16 to the appropriate output of the SAW-lesstransmitter output path. The FB switch 46 receives control informationfrom the baseband processing unit 22 and/or the processing module 24 toselect which path to connect to the antenna 16.

The antenna 16 also receives one or more inbound RF signals, which areprovided to one of the ATUs 42-44 via the frequency band (FB) switch 46.The ATU 42-44 provides the inbound RF signal(s) to the RX-TX isolationmodule 38-40, which routes the signal(s) to the receiver (RX) RF to IFsection 28 of the SOC 12. The RX RF to IF section 28 converts theinbound RF signal(s) (e.g., A(t)cos(ω_(RF)(t)+φ(t))) into an inbound IFsignal (e.g., A_(I)(t)cos(ω_(IF)(t)+φ_(I)(t)) andA_(Q)(t)cos(ω_(IF)(t)+φ_(Q)(t))). Various embodiments of the RX RF to IFsection 28 are illustrated in FIGS. 15-23 or others.

The RX IF to BB section 30 converts the inbound IF signal into one ormore inbound symbol streams (e.g., A(t)cos((ω_(BB)(t)+φ(t))). In thisinstance, the RX IF to BB section 30 includes a mixing section and acombining & filtering section. The mixing section mixes the inbound IFsignal(s) with a second local oscillation (e.g., LO2=IF−BB, where BB mayrange from 0 Hz to a few MHz) to produce I and Q mixed signals. Thecombining & filtering section combines (e.g., adds the mixed signalstogether—which includes a sum component and a difference component) andthen filters the combined signal to substantially attenuate the sumcomponent and pass, substantially unattenuated, the difference componentas the inbound symbol stream(s).

The baseband processing unit 22 converts the inbound symbol stream(s)into inbound data (e.g., voice, text, audio, video, graphics, etc.) inaccordance with one or more wireless communication standards (e.g., GSM,CDMA, WCDMA, HSUPA, HSDPA, WiMAX, EDGE, GPRS, IEEE 802.11, Bluetooth,ZigBee, universal mobile telecommunications system (UMTS), long termevolution (LTE), IEEE 802.16, evolution data optimized (EV-DO), etc.).Such a conversion may include one or more of: digital intermediatefrequency to baseband conversion, time to frequency domain conversion,space-time-block decoding, space-frequency-block decoding, demodulation,frequency spread decoding, frequency hopping decoding, beamformingdecoding, constellation demapping, deinterleaving, decoding,depuncturing, and/or descrambling. Note that the processing module 24converts a single inbound symbol stream into the inbound data for SingleInput Single Output (SISO) communications and/or for Multiple InputSingle Output (MISO) communications and converts the multiple inboundsymbol streams into the inbound data for Single Input Multiple Output(SIMO) and Multiple Input Multiple Output (MIMO) communications.

The power management unit 26 is integrated into the SOC 12 to perform avariety of functions. Such functions include monitoring powerconnections and battery charges, charging a battery when necessary,controlling power to the other components of the SOC 12, generatingsupply voltages, shutting down unnecessary SOC modules, controllingsleep modes of the SOC modules, and/or providing a real-time clock. Tofacilitate the generation of power supply voltages, the power managementunit 26 may includes one or more switch-mode power supplies and/or oneor more linear regulators.

With such an implementation of a portable computing communication device10, expensive and discrete off-chip components (e.g., SAW filters,duplexers, inductors, and/or capacitors) are eliminated and theirfunctionality is incorporated in the front-end module (FEM) 14 that canbe implemented on a single die. Further, the SAW-less receiverarchitecture and the SAW-less transmitter architecture facilitate theelimination of the discrete off-chip components.

FIG. 3 is a schematic block diagram of another embodiment of a portablecomputing communication device 10 that includes a chip set of a systemon a chip (SOC) 52 and another embodiment of a front-end module (FEM)50. The SOC 52 includes the power management unit 26, the SAW-lessreceiver section 18, the SAW-less transmitter section 20, the basebandprocessing unit 22, and may further include the processing module. TheFEM 50 includes a plurality of power amplifier modules (PA) 34-36, aplurality of RX-TX isolation modules 38-40, and at least one antennatuning unit (ATU) 54 as the antenna interface unit.

In this embodiment, the SOC 52 is operable to concurrently support twoor more wireless communications (e.g., a cellular telephone call and aWLAN communication and/or a Bluetooth communication). Accordingly, theSAW-less transmitter 20 generates two (or more) different frequency bandoutbound RF signals in a manner discussed with reference to FIG. 2and/or with reference to one or more subsequent figures. A first one ofthe different frequency outbound RF signals is provided to one of thePAs 34-36 of the FEM 50 and the other outbound RF signal is provided tothe other PA 34-36. Each of the TX-RX isolation modules 38-40 functionsas described with reference to FIG. 2 and as may be described withreference to one or more of the subsequent figures. The ATU 54, which istuned based on control signals from the SOC 52, provides the twooutbound RF signals to the antenna 16 for transmission.

The antenna 16 also receives two or more different frequency bandinbound RF signals, which it provides to the ATU 54. The ATU 54 mayincludes a splitter to separate the two inbound RF signals and separateimpedance matching circuits (e.g., one or more LC circuits) for eachseparated signal; a transformer balun to separate the signals andseparate impedance matching circuits; or an impedance matching circuitsfor the two signals, which are provided to the RX-TX isolation modules38-40.

The RX-TX isolation modules 38-40 are each frequency band dependent suchthat each will only pass inbound and outbound RF signals within theirrespective frequency bands (e.g., 850-900 MHz and 1800-1900 MHz). Assuch, a first TX-RX isolation module 38-40 provides a first frequencyband inbound RF signal to a first input of the SAW-less RX section 18and the second TX-RX isolation module 38-40 provides the secondfrequency band inbound RF signal to a second input of the SAW-less RXsection 18. The SAW-less RX section 18 processes the inbound RF signalsto produce first inbound data and second inbound data in manner asdiscussed with reference to FIG. 2 and/or as will be discussed withreference to one or more of the subsequent figures.

FIG. 4 is a schematic block diagram of another embodiment of a portablecomputing communication device 10 that includes a system on a chip (SOC)12 or 52 coupled to a front-end module (FEM) network 60 via an RFconnection 70. The SOC 12 or 52 includes the power management unit 26,the SAW-less receiver section 18, the SAW-less transmitter section 20,the baseband processing unit 22, and may further include the processingmodule. The RF connection 70 may be one or more of a coaxial cable, aflexible fiber optics cable, a flexible waveguide, and/or other highfrequency electrical cabling. The FEM network 60 includes a plurality ofFEMs 62-68 (e.g., two or more), where each FEM 62-68 includes aplurality of power amplifier modules (PA), a plurality of RX-TXisolation modules, at least one antenna tuning unit (ATU), and afrequency band switch (SW). Note that, in the alternative, one or moreof the FEMs 62-68 may be constructed as discussed with reference toFIGS. 3, 13, and/or 14. Further note that the FEM network 60 may beimplemented on a single die on a single package substrate; on multipledies (e.g., a FEM on each die) on a single substrate; or each FEM as aseparate integrated circuit (IC). In the latter case, one or more of theFEMs 62-68 may be remotely located from the SOC 12 or 52.

Each of the FEMs 62-68 may support the same frequency bands, differentfrequency bands, or a combination thereof. For example, two FEM maysupport the same frequency bands (e.g., 850-900 MHz and 1800-1900 MHz)and two others may support different frequency bands (e.g., 2.4 GHz, 5GHz, 60 GHz, etc.). In this example, the SOC 12 or 52 can select one ofthe FEMs 62-68 having the same frequency bands based on one or more of aplurality of RF communication parameters (e.g., transmit power level,receive signal strength, out-of-band blockers, signal-to-noise ratio,signal-to-interference ratio, frequency of operation, interference withother wireless communications, etc.) As an example, the SOC 12 or 52selects the FEM that will provide it with a current optimal performancelevel for cell phone communications and another FEM that will provide itwith a current optimal performance level for WLAN, personal areanetwork, or other wireless network communications.

Since each of the FEMs 62-68 is programmable, the SOC 12 or 52 canprogram the selected modules to reduce interference there-between. Forexample, the FEM supporting cell phone communications may be tuned tohave extra attenuation in the frequency bands of wireless area networkcommunications (e.g., 2.4 GHz, 5 GHz, 60 GHz, etc.). In addition, asconditions change (e.g., interference, transmission-reception distance,antenna parameters, environmental factors, etc.), the SOC 12 or 52 canadjust parameters of the selected FEMs to substantially compensate forthe changes. Alternatively, the SOC 12 or 52 may select a different FEMfor one or both of the communications.

The SOC 12 or 52 may select multiple FEMs 62-68 to support MIMOcommunications, SIMO communications, and/or MISO communications. Forexample, in a 2×2 MIMO communication, one FEM is selected for one of theTX/RX MIMO communication and another FEM is selected for the other TX/RXMIMO communication.

The SOC 12 or 52 may also selection one FEM to support a transmission inone frequency band and another FEM to support the reception in the samefrequency band, where isolation of the inbound RF signal from theoutbound RF signal is provided, at least in part, by physical separationof the two FEMs. For example, the SOC 12 or 52 may select a first FEM tosupport 1800 MHz cellular telephone transmissions and a second FEM tosupport 1800 MHz cellular telephone receptions. In another example, theSOC 12 or 52 may select a first FEM to support 1800 MHz cellulartelephone transmissions, a second FEM to support 900 MHz cellulartelephone transmissions, a third FEM to support 1800 MHz cellulartelephone transmissions; and a fourth FEM to support 900 MHz cellulartelephone receptions. In yet another example, the SOC 12 or 52 mayselect a first FEM to support 1800 MHz cellular telephone transmissions,a second FEM to support 900 MHz cellular telephone transmissions, thesecond FEM to support 1800 MHz cellular telephone transmissions; and thefirst FEM to support 900 MHz cellular telephone receptions.

In an example of operation of the wireless communication device, the SOCactivates one or more of the FEM 62-64 of the network 60 to receive aninbound RF signal from the one or more antennas. The active FEM(s)provides the inbound RF signal(s) to the SOC, which converts the inboundRF signal into inbound data via the SAW-less receiver section and thebaseband processing unit 22.

The SOC 12 or 52 converts, via the baseband processing module and theSAW-less transmitter section, outbound data into an outbound RF signal.The active FEM(s) receives the outbound RF signal from the SOC and isactive to output the outbound RF signal to one or more antennas. In theactive state, the one or more FEMs also functions to isolate the inboundRF signal from the outbound RF signal.

The SOC may active one or more of the FEMs in a variety of ways. Forexample, the SOC transmits, via the RF connection, an enable signal tothe one or more FEMs. Each of the FEMs includes an interface module(e.g., represented as a connection line to the RF connection) thatreceives the enable signal and, based on the state of the enable signal,actives the corresponding FEM. For instance, the interface moduleprovides a low impedance path between the corresponding FEM and the RFconnection when the FEM is to be activated and provides a high impedancepath when the FEM is to be inactive.

In another example, the SOC activates the FEM(s) by addressing them toreceive and/or transmit RF packets via the RF connection. For instance,each FEM includes at least one RF network interface (e.g., it includes 4RF network interfaces, each represented as a connection line to the RFconnection), each of which has a unique address within the communicationdevice. The SOC also includes at least one RF network interface (e.g.,it includes two RF network interfaces, each represented as a connectionline to the RF connection), each of which also has a unique addresswithin the communication device.

In this example, the RF network interface of an active FEM convert theinbound RF signal into one or more inbound RF packets, wherein each ofthe one or more inbound RF packets includes an address of the SOC (e.g.,an address of the SAW-less receiver RF network interface). The packetsmay be formatted in accordance with a standard protocol (e.g., IP,TCP/IP, ATM, etc.) or a proprietary protocol and are transmitted at anRF frequency (e.g., 900 MHz to 60 GHz or more) on the RF connection.

The RF network interface of the FEM transmits the one or more inbound RFpackets to the SOC via the RF connection. The SAW-less receiver RFnetwork interface receives the one or more inbound RF packets andconverts them into the inbound RF signal. A SAW-less RF networkinterface of the SOC RF network interface converts the outbound RFsignal into the one or more outbound RF packets, which include anaddress of a transmit section of one or more of the FEMs.

The RF network interface of the FEM (e.g., a network interface couplingone of the PAs to the RF connection) receives the one or more outboundRF packets from the SOC via the RF connection. The RF network interfaceconverts the one or more outbound RF packets into the outbound RFsignal, which is subsequently transmitted via an antenna.

In alternative example, the RF connection may be an RF bus supported bywaveguide RF connections and/or air. In this instance, each of the FEMsincludes an RF bus communication module to access the RF bus. Similarly,the SOC includes an RF bus communication module to access the RF bus.

In another example of operation, the portable computing communicationdevice may be a wireless femtocell transceiver that supports cellulartelephone communications where one or more of the FEM is physicallylocated at some distance (e.g., >1 meter) from the SOC 12 or 52.Further, one of the FEM may be used to communicate with a base station,while one or more other FEMs may be used to communicate with otherwireless communication devices (e.g., cell phones).

In this example, the system on a chip (SOC) activates a first set of oneor more of the FEMs and activates a second set of one or more of theFEMs for femtocell operation. In this operational state, RF signalstransceived between the first set of FEMs and an external wirelesscommunication device (e.g., base station, access point, a cell phone,etc.) are forward to the second set of FEMs for transceiving withanother external wireless communication device (note that a set of FEMsincludes one or more FEMs).

In particular, when activated, a first set of one or more FEMs isoperable to receive a first inbound RF signal via an antenna from thefirst external wireless communication device. For example, a first FEMof the first set is active to receive the first inbound RF signal via anantenna coupled to the first FEM. A first FEM of the second set isactive to output a second outbound RF signal to a second externalwireless communication device via an antenna coupled to the first FEM ofthe second set. The SOC facilitates the second outbound RF signalrepresenting the first inbound RF signal, which may be done in a varietyof ways.

Further, the first FEM, or a second FEM, of the second set of FEMs isactive to receive a second inbound RF signal via the antenna, or via asecond antenna coupled to the second FEM of the second set, from thesecond external wireless communication device. The first FEM, or asecond FEM, of the first set is active to output a first outbound RFsignal to the first external wireless communication device via theantenna, or an antenna coupled to the second FEM of the first set. TheSOC facilitates the first outbound RF signal representing the secondinbound RF signal, which may be done in a variety of ways.

The SOC may facilitate the outbound RF signals representing the inboundRF signals by generating first and second forwarding messages. The firstforwarding message instructs the first set of FEMs to forward the firstinbound RF signal to the second set of FEMs as the second outbound RFsignal. The second forwarding message instructs the second set of FEMsto forward the second inbound RF signal to the first set of FEMs as thefirst outbound RF signal. Note that the forwarding messages may furtherincludes a power amplifier gain setting, an isolation balancing signalfor the RX-TX isolation module, and/or an antenna tuning signal for theATU.

The SOC may also facilitate the outbound RF signals representing theinbound RF signals by generating first and second RF-to-RF conversionmessages. The first RF-to-RF conversion message instructs a frequencytranslation module to convert the first inbound RF signal from a firstfrequency band to a second frequency band before providing the signal tothe second set of FEMs. The second RF-to-RF conversion message instructsthe frequency translation module to convert the second inbound RF signalfrom the second frequency band to the first frequency band beforeproviding it to the first set of FEMs.

The SOC may also facilitate the outbound RF signals representing theinbound RF signals by converting the second inbound RF signal into asecond inbound symbol stream and converting the second inbound symbolstream into the first outbound RF signal. In addition, the SOC convertsthe first inbound RF signal into a first inbound symbol stream andconverts the first inbound symbol stream into the second outbound RFsignal.

The SOC may also facilitate the outbound RF signals representing theinbound RF signals when communication via the RF connection is doneusing RF packets. In this instance, the first FEM of the first set ofFEMs converts the first inbound RF signal into one or more first inboundRF packets and the first FEM of the second set of FEMS converts one ormore second outbound RF packets into the second outbound RF signal. TheSOC associates the one or more first inbound RF packets to the one ormore second outbound RF packets, which may be done in a variety of ways.

Further, the first FEM, or the second FEM, of the first set of FEMsconverts one or more first outbound RF packets into the first outboundRF signal and the first FEM, or the second FEM, of the second set ofFEMS converts the second inbound RF signal into one or more secondinbound RF packets. The SOC associates the one or more first inbound RFpackets to the one or more second outbound RF packets, which may be donein a variety of ways.

The SOC may associate the inbound RF packets to the outbound RF packetsby facilitating routing of the one or more second inbound RF packets toone of the first set FEMs as the one or more first inbound RF packets.Similarly, the SOC may facilitate facilitating routing of the one ormore first inbound RF packets to one of the second set FEMs as the oneor more second inbound RF packets.

The SOC may associate the inbound RF packets to the outbound RF packetsby facilitating routing of the inbound RF packets to a RF-to-RFfrequency translation module. The RF-to-RF translation module generatesthe second inbound RF signal from the one or more second inbound RFpackets, converts the second inbound RF signal from a second frequencyband to a first frequency band, and converts the frequency convertedinbound RF signal into the first inbound RF packets. Similarly, theRF-to-RF translation module generates the first inbound RF signal fromthe one or more first inbound RF packets, converts the first inbound RFsignal from a first frequency band to a second frequency band, andconverts the frequency converted inbound RF signal into the secondinbound RF packets.

The SOC may associate the inbound RF packets to the outbound RF packetsby receiving the one or more inbound RF packets and converting them intothe inbound RF signal. The SOC then converts the inbound RF signal intoan inbound symbol stream and then converts the inbound symbol streaminto the other outbound RF signal (first outbound for second inbound andsecond outbound for first inbound). The SOC then convert the outbound RFsignal into the one or more outbound RF packets.

As another example of femtocell operation, the device 10 communicateswith a base station (BS) using conventional cellular services, while thelinks between the device and other wireless communication device(s) usesa different frequency band. The SOC processing module coordinatesInternet and/or cellular access for the other devices and the signalconversions for the various links.

As another example of femtocell operation, the device 10 functions as awireless femtocell for 1-4 cell phones or other handheld devices. Thewireless local links between the devices may follow one or moreprotocols. One protocol is to follow the traditional cellular standards(e.g., wireless femtocell allocates the local wireless links like a BS).Another protocol has the wireless femtocell device functioning as a userinterface extension over an Internet protocol (IP) pipe. The handset hasone link to the access point (AP) or the handset links to other devicesforming a mesh to logically connect to the AP by alternate means.

As yet another example of femtocell operation, the device 10 functionsas a wireless femtocell (e.g., AP) that uses data call wireless accessto a cell system such that an IP pipe is provided to the AP logicallyconnecting it to application servers anywhere on the internet. Forexample, the carrier does not have to provide the telephony systeminterface for voice calls. An IP pipe runs through the AP to connectsomething like an Internet phone client in the field to the Internetphone network. The load and the capacity of the data pipe to the carrierfrom the AP determine the number of active handsets supported from oneAP.

In this example of femtocell operation, the link from the AP to thesupported wireless devices is not in the cellular band, but usestraditional cellular standards (i.e., the AP looks like a BS and runs aconverter function while the handset client runs on the supportedwireless device). Alternatively, the link between the device 10 andsupported wireless devices uses a proprietary set of call proceduresthat is not the cellular standard. In this instance, the AP is runningthe device client and the device is merely a remote UI extension over anIP pipe.

As yet another example of femtocell operation, the device 10 determineswhether it should become a femtocell for other wireless devices. In thisinstance, the device 10 determines whether it meets a qualificationthreshold (e.g. it has a good & consistent signal to the carrier, it hasgood battery life, it is not likely to be used for a cell call, etc.).If it does, then it registers with the carrier as a femtocell in a givengeographic location.

Once registered, it seeks wireless device (e.g., cell phones) in thevicinity by way of the peer-to-peer wireless (60 GHz, TVWS, 2.4 GHz,etc). For devices it identifies, the device 10 determines signalstrength for each of wireless devices with the carrier (e.g., theyconvey the information). For each wireless device with weak or no signalstrength with the carrier (e.g., with a BS of the carrier), the device10 offers to be a femtocell host for the wireless device. If thewireless device wants the device 10 to be its femtocell, the device 10registers that it is functioning as the femtocell for the wirelessdevice with the carrier. Note that this can be a dynamic process betweenseveral devices, where one can function as the femtocell AP for theother devices. If conditions change, one of the other devices can becomethe femtocell AP for the devices and the device that was the femtocellAP becomes a client of the new femtocell AP.

As yet another example of femtocell operation, multiple devices may meshtogether to form a femto-network. In this instance, one device functionsas a relay for one or more other devices to access the devicefunctioning as the wireless femtocell AP. Alternatively, meshing mayinclude multiple wireless femtocell devices serving as a host to localdevices and they are linking to other APs to provide connectivity. Suchsharing may be to have one of the wireless femtocell devices providecellular voice connections, another provide cellular data connections,and a third providing WLAN connections.

As yet another example of femtocell operation, multiple devices are in aconfined geographic area (e.g., in a car, room, etc.) and utilize aprotocol to determine which device will function as the wirelessfemtocell AP for the other devices and what services to provide. Forinstance, a group of devices (where at least one is capable of being afemto AP) establish a peer-to-peer link between them (60 GHz, TVWS, 2.4GHz, etc) and then determine if those links are sustainable over timeand if they are moving substantially together (e.g. in the same car ortrain etc) by comparing notes on cell sites that they traverse as agroup over time. If they determine they are in the same moving vehiclethen they will each report to each other their particular averagecarrier quality metrics. Based on the metrics they will determine whichhandset has the best overall signal to a carrier. Each device may be ona different carrier or they could all be on the same carrier. Either waythe signal may be quite different from one device to another as afunction of many variables, such as position in the vehicle and howclose to a body it may be, etc. If the best signal is substantiallybetter than what a given device can do via its direct carrier link, itwill request to be hosted by the device with the best signal. Once theregistrations are done calls can be passed to the other devices throughthe AP host. If the carrier signal falls below a threshold the processrepeats and a different device may be elected as the new host. In thisspecial case, all the devices know which other devices to test, at leastuntil they are out of range of each other.

As yet another example of femtocell operation, for devices participatingin a web conference, each provides a user interface to one person at atime (i.e., the device user). As such, each device is essentiallysupporting the same one-to-one wireless connection with the carrier. Toreduce the redundant traffic and lower costs by bolstering networkcapacity, a 1^(St) device of the web conference offers to be a wirelessfemtocell AP for other devices in the same geographic area. If accepted,the 1^(st) device registers with the carrier and subsequently functionsas a wireless femtocell AP for the other devices for the web conference.An expansion of this concept can be applied to any type of audio and/orvideo conference whether multiple users within a given geographic areawill attend the conference via a portable computing communicationdevice. A further expansion may include sharing a server-basedapplication with other devices (e.g., one device is the wirelessfemtocell AP to access an internet hosted application (e.g., a database,a video game, etc.) and the other devices access the internet hostedapplication via the wireless femtocell AP).

As a more specific example, a first FEM of the first set of FEMs receivethe first inbound RF signal from the first wireless communicationdevice, wherein the first inbound RF signal includes a multicastmultimedia signal (e.g., a web conference, a video broadcast, an audiobroadcast, a video graphics broadcast, a text broadcast, etc.). The SOCfacilitates the first inbound RF signal representing the first, second,and third outbound RF signals.

The example continues with a second FEM of the first set of FEMsoutputting the first outbound RF signal to a second antenna of the firstone or more antennas for transmission to a third wireless communicationdevice. Similarly, a first FEM of FEMs outputs the second outbound RFsignal to a first antenna of the second one or more antennas fortransmission to the second wireless communication device and a secondFEM of the second set of FEMs outputs the third outbound RF signal to asecond antenna of the second one or more antennas for transmission to afourth wireless communication device.

As yet another example of femtocell operation, a device that is beingused as a wireless femtocell AP is configured based on it environment(e.g., being used in an office, at home, in the car, public place,private place, public use, private use, etc.). The configuration optionsincludes frequency use patterns, transmit power, number of units tosupport, centralized femtocell control, distributed femtocell control,allocated capacity, level of encoding, symbols, and/or channel access.For example, if in a public place, will the device be used as a publicwireless femtocell or a private wireless femtocell. When the device willbe used for a private femtocell, it selects a configuration that insuresprivacy of the communications it supports.

FIG. 5 is a schematic block diagram of another embodiment of a portablecomputing communication device 10 that includes a system on a chip (SOC)12 or 52 coupled to a front-end module (FEM) network 80 via an RFconnection 90. The SOC 12 or 52 includes the power management unit 26,the SAW-less receiver section 18, the SAW-less transmitter section 20,the baseband processing unit 22, and may further include the processingmodule. The RF connection 90 may be one or more of a coaxial cable, aflexible fiber optics cable, a flexible waveguide, and/or other highfrequency electrical cabling. The FEM network 80 includes a plurality ofFEMs 62-68 (e.g., two or more) and a frequency translation module 82.The frequency translation module 82 includes one or more by-passableRF-to-RF translation modules 86. Each of the FEM 62-68 includes aplurality of power amplifier modules (PA), a plurality of RX-TXisolation modules, at least one antenna tuning unit (ATU), and afrequency band switch (SW). Note that one or more of the FEMs 62-68 maybe constructed as discussed with reference to FIG. 3.

The SOC 12 or 52 and the FEMs 62-68 function similarly to the SOC 12 or52 and FEMs 62-68 of FIG. 4. In this embodiment, an inbound RF signalfrom an FEM and/or outbound RF signal from the SOC 12 or 52 may befrequency translated before being routed between the SOC 12 or 52 andthe corresponding FEM. For example, the SOC 12 or 52 may be constructedto process inbound and outbound RF signals with a carrier frequency of2.4 GHz, but has the baseband capabilities to produce symbol streams inaccordance with a plurality of standardized wireless protocols and/orproprietary protocols. In this instance, the SOC 12 or 52 generates anoutbound symbol stream in accordance with a give wireless protocol andup converts the symbol stream to an RF signal having a 2.4 GHz carrierfrequency.

The RF to RF frequency translation module 86, which includes a localoscillator, a mixing module, and filtering, mixes the outbound RF signalwith the local oscillation to produce a mixed signal. The filteringsection filters the mixed signal to produce the outbound RF signal atthe desired carrier frequency (e.g., 900 MHz, 1800 MHz, 1900 MHz, 5 GHz,60 GHz, etc.). Note that the frequency translation module 82 may includea plurality of RF-to-RF translation modules 86 (one or more for steppingup the carrier frequency and/or one or more for stepping down thecarrier frequency). In this regard, a generic SOC 12 or 52 may beimplemented that can be coupled to a variety of implementations of theFEM network 80 (e.g., number of FEM modules 62-68, number of RF-to-RFtranslation modules 86, etc.) to produce a variety of portable computingcommunication devices.

FIG. 6 is a schematic block diagram of another embodiment of a portablecomputing communication device 10 that includes a plurality of system ona chips (SOC) 12 or 52 coupled to a front-end module (FEM) network 60via an RF connection 78. Each of the SOC 12 or 52 includes the powermanagement unit 26, the SAW-less receiver section 18, the SAW-lesstransmitter section 20, the baseband processing unit 22, and may furtherinclude the processing module. The RF connection 78 may be one or moreof a coaxial cable, a flexible fiber optics cable, a flexible waveguide,and/or other high frequency electrical cabling. The FEM network 60includes a plurality of FEMs 62-68 (e.g., two or more), each of whichincludes a plurality of power amplifier modules (PA), a plurality ofRX-TX isolation modules, at least one antenna tuning unit (ATU), and afrequency band switch (SW). Note that one or more of the FEMs 62-68 maybe constructed as discussed with reference to FIG. 3.

In this embodiment, one of the SOCs 12 or 52 utilizes one or more of theFEMs 62-68 to support one or more wireless communications (e.g., cellphone, WLAN, WPAN, etc.) and another SOC 12-52 utilizes one or moreother FEMs 62-68 to support one or more other wireless communications.To reduce interference between the wireless communications and/or tooptimize each of the wireless communications, one or more of the SOCs 12or 52 provides control signals to the FEMs 62-68 to adjust theproperties thereof. As an alternative to each SOC 12 or 52 utilizingdifferent FEMs 62-68, two or more SOCs 12 or 52 may share an FEM 62-68via a switching module (not shown) in a time division manner. As yetanother alternative, one SOC 12 or 52 may utilize one path of an FEM62-68 and another SOC 12 or 52 may utilize one of the other paths of theFEM 62-68.

FIG. 7 is a schematic block diagram of another embodiment of a portablecomputing communication device 10 that includes a plurality of system ona chips (SOC) 12 or 52 coupled to a front-end module (FEM) network 80via an RF connection 90. The SOC 12 or 52 includes the power managementunit 26, the SAW-less receiver section 18, the SAW-less transmittersection 20, the baseband processing unit 22, and may further include theprocessing module. The RF connection 90 may be one or more of a coaxialcable, a flexible fiber optics cable, a flexible waveguide, and/or otherhigh frequency electrical cabling. The FEM network 80 includes aplurality of FEMs 62-68 (e.g., two or more) and a frequency translationmodule 82. The frequency translation module 82 includes one or moreby-passable RF-to-RF translation modules 86. Each of the FEM 62-68includes a plurality of power amplifier modules (PA), a plurality ofRX-TX isolation modules, at least one antenna tuning unit (ATU), and afrequency band switch (SW). Note that one or more of the FEMs 62-68 maybe constructed as discussed with reference to FIG. 3.

In this embodiment, one of the SOCs 12 or 52 utilizes one or more of theFEMs 62-68 to support one or more wireless communications (e.g., cellphone, WLAN, WPAN, etc.) and another SOC 12 or 52 utilizes one or moreother FEMs 62-68 to support one or more other wireless communications.One or more of the SOCs 12 or 52 provides control signals to the FEMs62-68 to adjust the properties thereof to reduce interference betweenthe wireless communications and to optimize each of the wirelesscommunications. In addition, one or more of the wireless communicationsmay be passed through the frequency translation module 82 to step up orstep down the carrier frequency of the wireless communications.

FIG. 8 is a schematic block diagram of another embodiment of a portablecomputing communication device 10 that includes a system on a chip (SOC)100 coupled to a front-end module (FEM) network 60 via an RF connection70. The SOC 100 includes the power management unit 26, a plurality ofSAW-less receiver sections 18-1-18-2, a plurality of SAW-lesstransmitter sections 20-1-20-2, one or more baseband processing units22, and may further include the processing module. The RF connection 70may be one or more of a coaxial cable, a flexible fiber optics cable, aflexible waveguide, and/or other high frequency electrical cabling. TheFEM network 60 includes a plurality of FEMs 62-68 (e.g., two or more),each of which includes a plurality of power amplifier modules (PA), aplurality of RX-TX isolation modules, at least one antenna tuning unit(ATU), and a frequency band switch (SW). Note that one or more of theFEMs 62-68 may be constructed as discussed with reference to FIG. 3.

In this embodiment, the SOC 100 is capable of multiple concurrentwireless communications using one or more of the FEMs 62-68. Forexample, one pair of SAW-less transmitter & receiver may be used forWLAN communications and another pair of SAW-less transmitter & receivermay be used for 850 or 900 MHz cellular telephone communications. Inanother example, one pair of SAW-less transmitter & receiver may be usedfor cellular voice communications and another pair of SAW-lesstransmitter & receiver may be used for cellular data communications.Note that the concurrent wireless communications may be in the samefrequency band with different carrier frequencies and/or in differentfrequency bands.

FIG. 9 is a schematic block diagram of another embodiment of a portablecomputing communication device 10 that includes a system on a chip (SOC)100 coupled to a front-end module (FEM) network 80 via an RF connection70. The SOC 100 includes the power management unit 26, a plurality ofSAW-less receiver sections 18-1-18-2, a plurality of SAW-lesstransmitter sections 20-1-20-2, one or more baseband processing units22, and may further include the processing module. The RF connection 70may be one or more of a coaxial cable, a flexible fiber optics cable, aflexible waveguide, and/or other high frequency electrical cabling. TheFEM network 80 includes a plurality of FEMs 62-68 (e.g., two or more)and a frequency translation module. The frequency translation module 86includes one or more by-passable RF-to-RF translation modules 86. Eachof the FEM 62-68 includes a plurality of power amplifier modules (PA), aplurality of RX-TX isolation modules, at least one antenna tuning unit(ATU), and a frequency band switch (SW). Note that one or more of theFEMs 62-68 may be constructed as discussed with reference to FIG. 3.

In this embodiment, the SOC 100 is capable of multiple concurrentwireless communications using one or more of the FEMs 62-68 and thecarrier frequency of one or more of the wireless communications may beconverted by the frequency translation module 82. For example, one pairof SAW-less transmitter & receiver may be used for WLAN communicationsand another pair of SAW-less transmitter & receiver may be used for 850or 900 MHz cellular telephone communications. In another example, onepair of SAW-less transmitter & receiver may be used for cellular voicecommunications and another pair of SAW-less transmitter & receiver maybe used for cellular data communications. In either of these examples,the carrier frequency of one or more of the wireless communications maybe stepped up or stepped down by the frequency translation module 82.

FIG. 10 is a schematic block diagram of another embodiment of a portablecomputing communication device 10 that includes a system on a chip (SOC)110 coupled to a front-end module (FEM) network 120 via an RF connection122. The SOC 110 includes the power management unit 26, an intermediatefrequency (IF) to baseband (BB) receiver section 112, a BB to IFtransmitter section 114, a baseband processing unit 22, and may furtherinclude the processing module. The RF connection 122 may be one or moreof a coaxial cable, a flexible fiber optics cable, a flexible waveguide,and/or other high frequency electrical cabling.

The FEM network 120 includes a plurality of FEMs 62-68 (e.g., two ormore) and a plurality of pairs of RF to IF TX and RX sections 124-138.Each of the FEMs 62-68 includes a plurality of power amplifier modules(PA), a plurality of RX-TX isolation modules, at least one antennatuning unit (ATU), and a frequency band switch (SW). Each of the TXIF-to-RF sections 132-138 includes a polar-based topology, aCartesian-based topology, a hybrid polar-Cartesian-based topology, or amixing, filtering, & combining module. Each of the RX RF-to-IF sections124-130 includes a low noise amplifier section and a down-conversionsection. Note that one or more of the FEMs 62-68 may be constructed asdiscussed with reference to FIG. 3.

In this embodiment, the baseband processing module 22 converts outbounddata into one or more outbound symbol streams in accordance with one ormore wireless communication protocols. The TX BB to IF section 114includes a mixing module that mixes the outbound symbol stream(s) with atransmit IF local oscillation (e.g., an oscillation having a frequencyof 10's of MHz to 10's of GHz) to produce one or more outbound IFsignals.

The SOC 110 provides the outbound IF signal(s) to the FEM network 120via the RF connection 122. In addition, the SOC 110 provides a selectionsignal indicating which of the RX-TX section pairs 124-130 andcorresponding FEM 62-68 will support the wireless communication. Theselected TX IF to RF section 132-138 mixes the IF signal with a secondlocal oscillation (e.g., an oscillation having a frequency of RF-IF) toproduce one or more mixed signals. The combining & filtering sectioncombines the one more mixed signals and filters them to produce thepre-PA outbound RF signal, which is provided to the corresponding FEM62-68.

For an inbound RF signal, the antenna associated with a FEM 62-68receives the signal and provides it to the frequency band switch (SW) ifincluded or to the ATU if no switch is included. The FEM 62-68 processesthe inbound RF signal as previously discussed and provides the processedinbound RF signal to the corresponding RX RF to IF section 124-130. TheRX RF to IF section 124-130 mixes the inbound RF signal with a second RXlocal oscillation (e.g., an oscillation having a frequency of RF-IF) toproduce one or more inbound IF mixed signals (e.g., I and Q mixed signalcomponents or polar-formatted signal at IF (e.g.,A(t)cos(ω_(IF)(t)+φ(t)).

The RX IF to BB section 112 of the SOC 110 receives the one or moreinbound IF mixed signals and converts them into one or more inboundsymbol streams. The baseband processing module 22 converts the one ormore inbound symbol streams into inbound data. Note that the SOC 110 mayinclude a plurality of RX IF to BB and TX BB to IF sections to supportmultiple concurrent wireless communications.

FIG. 11 is a schematic block diagram of another embodiment of a portablecomputing communication device 10 that includes a system on a chip (SOC)140 coupled to a front-end module (FEM) network 142 via an RF connection152-154. The SOC 140 includes the power management unit 26, anintermediate frequency (IF) to baseband (BB) receiver section 144, a BBto IF transmitter section 146, a baseband processing unit 22, and mayfurther include the processing module. The RF connection 152-154 may beone or more of a coaxial cable, a flexible fiber optics cable, aflexible waveguide, and/or other high frequency electrical cabling.

The FEM network 142 includes a plurality of FEMs 62-68 (e.g., two ormore) and a pair of RF to IF TX and RX sections 148-150. Each of theFEMs 62-68 includes a plurality of power amplifier modules (PA), aplurality of RX-TX isolation modules, at least one antenna tuning unit(ATU), and a frequency band switch (SW). The TX IF-to-RF section 150includes a polar-based topology, a Cartesian-based topology, a hybridpolar-Cartesian-based topology, or a mixing, filtering, & combiningmodule. The RX RF-to-IF section 148 includes a low noise amplifiersection and a down-conversion section. Note that one or more of the FEMs62-68 may be constructed as discussed with reference to FIG. 3.

In this embodiment, the baseband processing module 22 converts outbounddata into one or more outbound symbol streams in accordance with one ormore wireless communication protocols. The TX BB to IF section 146includes a mixing module that mixes the outbound symbol stream(s) with atransmit IF local oscillation (e.g., an oscillation having a frequencyof 10's of MHz to 10's of GHz) to produce one or more outbound IFsignals.

The SOC 140 provides the outbound IF signal(s) to the FEM network 142via the RF connection 152-154. The TX IF to RF section 150 mixes the IFsignal with a second local oscillation (e.g., an oscillation having afrequency of RF-IF) to produce one or more mixed signals. The combining& filtering section combines the one more mixed signals and filters themto produce the pre-PA outbound RF signal, which is provided to aselected one of the FEMs 62-68.

For an inbound RF signal, the antenna associated with the select FEM62-68 receives the signal and provides it to the frequency band switch(SW) if included or to the ATU if no switch is included. The FEM 62-68processes the inbound RF signal as previously discussed and provides theprocessed inbound RF signal to the RX RF to IF section 148. The RX RF toIF section 148 mixes the inbound RF signal with a second RX localoscillation (e.g., an oscillation having a frequency of RF-IF) toproduce one or more inbound IF mixed signals (e.g., I and Q mixed signalcomponents or polar-formatted signal at IF (e.g.,A(t)cos(ω_(IF)(t)+φ(t)).

The RX IF to BB section 144 of the SOC 140 receives the one or moreinbound IF mixed signals and converts them into one or more inboundsymbol streams. The baseband processing module 22 converts the one ormore inbound symbol streams into inbound data. Note that the SOC 140 mayinclude a plurality of RX IF to BB 144 and TX BB to IF sections 146 tosupport multiple concurrent wireless communications.

FIG. 12 is a schematic block diagram of another embodiment of a portablecomputing communication device 10 that includes a system on a chip (SOC)160 coupled to a front-end module (FEM) network 162 via an RF connection176. The SOC 160 includes the power management unit 26, a SAW-lessreceiver (RX) down-conversion section 164, a SAW-less transmitter (TX)up-conversion section 166, a baseband processing unit 22, and mayfurther include the processing module. The RF connection 176 may be oneor more of a coaxial cable, a flexible fiber optics cable, a flexiblewaveguide, and/or other high frequency electrical cabling.

The FEM network 162 includes a plurality of FEMs 168-174 (e.g., two ormore) and a pair of RF to IF TX and RX sections. Each of the FEMs168-174 includes a plurality of power amplifier drivers (PAD), aplurality of low noise amplifiers (LNA), a plurality of power amplifiermodules (PA), a plurality of RX-TX isolation modules, at least oneantenna tuning unit (ATU), and a frequency band switch (SW). Note thatone or more of the FEMs 168-174 may be constructed as discussed withreference to FIG. 3.

In this embodiment, the baseband processing module 22 converts outbounddata into one or more outbound symbol streams in accordance with one ormore wireless communication protocols. The SAW-less TX up-conversionsection 166, which may be implemented similarly to the SAW-less TXsection less the power amplifier driver, converts the outbound symbolstream(s) into one or more outbound up-converted signals.

The SOC 160 provides the outbound up-converted signal(s) to the FEMnetwork 162 via the RF connection 176. The SOC 160 may also provide anFEM selection signal to the FEM network 162. The selected FEM modulereceives the outbound up-converted signal(s) via the power amplifierdriver (PAD). The PAD amplifies the outbound up-converted signal(s) toproduce the pre-PA outbound RF signals, which are subsequently processedby the FEM 168-174 as previously discussed and/or as discussed withreference to one or more of the subsequent figures.

For an inbound RF signal, the antenna associated with the select FEM168-174 receives the signal and provides it to the frequency band switch(SW), if included, or to the ATU if no switch is included. The ATU andRX-TX isolation module process the inbound RF signal as previouslydiscussed and provides the processed inbound RF signal to the LNA. TheLNA amplifies the inbound RF signal(s) to produce an amplified inboundRF signal(s).

The SAW-less RX section 164 (which may be implemented similarly to theSAW-less receive section less the LNA) receives the one or moreamplified inbound IF mixed signals and converts them into one or moreinbound symbol streams. The baseband processing module 22 converts theone or more inbound symbol streams into inbound data. Note that thebaseband processing unit 22 and/or the processing module may providecontrol signals to the LNA and/or to the PAD of each of the FEMs 168-174to adjust properties thereof (e.g., gain, linearity, bandwidth,efficiency, noise, output dynamic range, slew rate, rise rate, settlingtime, overshoot, stability factor, etc.).

FIG. 13 is a schematic block diagram of another embodiment of a portablecomputing communication device that includes a system on a chip (SOC)180 coupled to a front-end module (FEM) 182. The SOC 180 includes aplurality of SAW-less receiver sections (only the LNA and frequencytranslated bandpass filter (FTBPF) of the receiver section is shown), aplurality of SAW-less transmitter sections (only the power amplifierdriver (PAD) is shown), the processing module, the baseband processingmodule (not shown or included in the processing module), and the powermanagement unit (not shown).

The FEM 182 includes a low frequency band (LB) path, a high frequencyband (HB) path, and a frequency band switch (FB SW). The LB pathincludes a power amplifier module (PA), a low band impedance stage (LBZ), a low band low pass filter (LB LPF), a switch (SW), atransmit-receive isolation module (TX-RX ISO) (e.g., a duplexer), asecond switch (SW), and an antenna tuning unit (ATU). The HB pathincludes a power amplifier module (PA), a high band impedance stage (HBZ), a high band low pass filter (HB LPF), a switch (SW), atransmit-receive isolation module (TX-RX ISO) (e.g., a duplexer), asecond switch (SW), and an antenna tuning unit (ATU). Note that the lowband path may be used to support low band GSM, EDGE, and/or WCDMAwireless communications and the high band path may be used to supporthigh band GSM, EDGE, LTE, WiMAX, and/or WCDMA wireless communications.Further note that the switches collectively function as RX-TX isolationby-pass switches.

The SOC 180 functions to output pre-PA outbound RF signals and to inputinbound RF signals as previously discussed and/or as will be discussedwith reference to one or more of the subsequent figures. The FEM 182receives the pre-PA outbound RF signals via the LB path or the HB pathand amplifies them via the corresponding PA module. The impedance stage(LB Z or HB Z) provides a desired load on the output of the PA modulesand is coupled to the low pass filter (LB LPF or HP LPF). The LPFfilters the outbound RF signal, which is provided to the TX-RX ISOmodule or to the ATU depending on the configuration of the switches(SW). If switches couple the LPF to the TX-RX ISO module, the TX-RXmodule attenuates the outbound RF signals before providing them to theATU. The ATU functions as previously described and/or as will bedescribed with reference to one or more of the subsequent figures.

Note that there are no discrete components between the SOC 180 and theFEM 182. In particular, the portable computing communication device doesnot need discrete SAW-filters as are required in current cellulartelephone implementations. One or more of the architecture of theSAW-less receiver, the architecture of the SAW-less transmitter, and/orthe programmability of the various components of the FEM 182 contributeto the elimination of SAW filters and/or other conventional externalcomponents.

FIG. 14 is a schematic block diagram of another embodiment of a portablecomputing communication device that includes a system on a chip (SOC)190 coupled to a front-end module (FEM) 192. The SOC 190 includes aplurality of SAW-less receiver sections (only the LNA and frequencytranslated bandpass filter (FTBPF) of the receiver section is shown), aplurality of SAW-less transmitter sections (only the power amplifierdriver (PAD) is shown), the processing module, the baseband processingmodule (not shown or included in the processing module), and the powermanagement unit (not shown).

The FEM 192 includes a low frequency band (LB) path, a high frequencyband (HB) path, and a frequency band switch (FB SW). The LB pathincludes a power amplifier module (PA), a low band impedance stage (LBZ), a switch (SW), a low band low pass filter (LB LPF), atransmit-receive isolation module (TX-RX ISO) (e.g., a duplexer), asecond switch (SW), and an antenna tuning unit (ATU). The HB pathincludes a power amplifier module (PA), a high band impedance stage (HBZ), a switch (SW), a high band low pass filter (HB LPF), atransmit-receive isolation module (TX-RX ISO) (e.g., a duplexer), asecond switch (SW), and an antenna tuning unit (ATU). Note that the lowband path may be used to support low band GSM, EDGE, and/or WCDMAwireless communications and the high band path may be used to supporthigh band GSM, EDGE, LTE, WiMAX, and/or WCDMA wireless communications.Further note that the switches collectively function as RX-TX isolationby-pass switches.

In the various embodiments of the SOC 190, the frequency translatedbandpass filter in the receiver section of the SOC 190 providessufficiently filters the far-out blockers and filters the image signalwith negligible affect on the desired signal. This reduces the dynamicrange requirement of the analog to digital converters (ADC) of thereceiver section (at the output end of the baseband processing module orat the input of the RX BB to IF section). The super heterodynearchitecture of the receiver section is optimal for reducing powerconsumption and die area in comparison to a comparable directionconversion receiver section.

FIG. 15 is a schematic block diagram of an embodiment of an RF to IFreceiver section 204 of an SOC 200 that includes an FEM module (whichincludes a transformer T1, a tunable capacitor network C1, and/or a lownoise amplifier module (LNA) 206), a mixing module 208, mixed buffers210-212, a frequency translated bandpass filter (FTBPF) circuit module(which includes FTBPF 222 and/or additional buffers 214-220), and areceiver IF to BB section 224. The SOC 200 also includes the SAW-lesstransmitter section 202 and may further include the baseband processingunit, the processing module, and the power management unit.

In an example of operation, an inbound RF signal is received via theantenna. The inbound RF signal includes a desired signal component at RFand an undesired component at a frequency above or below RF (above isshown). With respect the local oscillation of the RF to IF section 204(e.g., f_(LO)), an image signal component may occur if a signal ispresent at r_(RF)−2f_(IF). Note that, as used herein and throughout thisspecification, RF includes frequencies in the radio frequency band up to3 GHz and frequencies in the millimeter (or microwave) frequency band of3 GHz to 300 GHz.

The antenna provides the inbound RF signal to the FEM, which processesit as previously discussed and/or as will be discussed with reference toone or more of the subsequent figures. The transformer T1 receives theFEM processed inbound RF signal and converts it into a differentialsignal, which is filtered by the tunable capacitor network C1 (e.g., aplurality of series coupled switches and capacitors, wherein theplurality is coupled in parallel). The tunable capacitor network C1receives a control signal from the baseband processing unit and/or theprocessing module (e.g., SOC processing resources) to enable a desiredcapacitance.

The low noise amplifier module (LNA) 206, which includes one or more lownoise amplifiers coupled in series and/or in parallel, amplifies theinbound RF signal to produce an amplified inbound RF signal. The LNA 206may receive a control signal from the SOC processing resources, whereinthe control signal indicates a setting for at least one of gain,linearity, bandwidth, efficiency, noise, output dynamic range, slewrate, rise rate, settling time, overshoot, and stability factor.

The mixing module 208 receives the amplified inbound RF signal andconverts it into an in-phase (I) signal component and a quadrature (Q)signal component using a conversion module such as a π/2 phase shifteror other type of phase manipulation circuit. A mixer of the mixingmodule 208 mixes the I signal component with an I signal component of alocal oscillation (e.g., f_(LO)) to produce an I mixed signal andanother mixer mixes the Q signal component with a Q signal component ofthe local oscillation to produce a Q mixed signal. Note that the mixersof the mixing module 208 may each be a balanced mixer, a double balancedmixer, a passive switch mixer, a Gilbert cell mixer, or other type ofcircuit that multiplies two sinusoidal signals and produces a “sum ofthe frequencies” signal component and a “difference between thefrequencies” signal component. Further note that the I and Q mixedsignals may be differential signals or single ended signals;differential signals are shown.

The mixer buffers 210-212 filter and/or buffer the I and Q mixedsignals, which are subsequently provided to the FTBPF structure (e.g.,the buffers 214-220 and the frequency translated bandpass filter (FTBPF)222). Note that each of the I and Q mixed signals includes an IF versionof the desired signal component and may also include an IF version ofthe image signal component. Further note that the mixing module 208and/or the mixer buffers 210-212 may included filtering to attenuate theundesired signal component such that it of minimal impact on the IFsignal components.

The FTBPF 222 (various embodiments of which will be described in severalof the subsequent figures) filters the IF signal by attenuating theimage IF signal component and passing, substantially unattenuated, thedesired IF signal component. For example, assume that the FTBPFfrequency translates a narrow band baseband bandpass filter response toan IF (e.g., RF-LO) filter response. Further assume for this examplethat RF is 2 GHz, LO2 is 1900 MHz, and RF_(image) is 1800 MHz. Based onthese assumptions, the mixing module 208 will produce an I mixed signaland a Q mixed signal that is a combination of the desired signal and theimage signal. In simplified terms, the I mixed signal (e.g.,cos(RF)*cos(LO2) includes ½ cos(2000−1900)+½ cos(2000+1900) from thedesired signal component and ½ cos(1800−1900)+½ cos(1800+1900) from theimage signal component and the Q mixed signal (e.g., sin(RF)*sin(LO)includes ½ cos (2000−1900)−½ cos(2000+1900) from the desired signalcomponent and ½ cos(1800−1900)−½ cos(1800+1900). Note that frequencycomponents at 2000+1900 are filtered out by the buffer after the mixer.

The narrow band of the FTBPF filters out the image frequency at(1800−1900) and the undesired signal component, leaving the componentshaving a frequency at (2000−1900) of the desired signal component. Inparticular, what is remaining is ½ cos (2000−1900) from the I mixedsignal and ½ cos(2000−1900) from the Q mixed signal. The FTBPF 222 takesadvantage of these two inputs to effective sum the terms from thedesired signal component together (e.g., ½ cos(2000−1900)+½cos(2000−1900)=cos (2000−1900)) and to effective sum the terms from theimage signal component together (e.g., ½ cos(1800−1900)−½cos(1800−1900)=0 (ideally)). As such, the image signal component isattenuated while the desired signal component is passed substantiallyunattenuated.

To enhance the filtering of the FTBPF 222, it may receive one or morecontrol signals from the SOC processing resources. The control signal(s)may cause the FTBPF 222 to adjust the center frequency of the basebandfilter response (which changes the center frequency of the high-Q IFfilter), to change the quality factor of the filter, to change the gain,to change the bandwidth, etc.

The receiver IF to BB section 224 includes a mixing section and acombining & filtering section. The mixing section mixes the inbound IFsignal with a second local oscillation to produce I and Q mixed signals.The combining & filtering section combines the I and Q mixed signals toproduce a combined signal and then filters the combined signal toproduce the one or more inbound symbol streams.

While the present RF to IF section 204 is shown coupled to a singleantenna for SISO (single input single output) communications, theconcepts are applicable to MISO (multiple input single output)communications and to MIMO (multiple input multiple output)communications. In these instances, a plurality of antennas (e.g., 2 ormore) is coupled to a corresponding number of FEMs (or a less number ofFEMs depending on the receive paths within a FEM). The FEMS are coupledto a plurality of receiver RF to IF sections (e.g., same number as thenumber of antennas), which are, in turn, coupled to a correspondingnumber of receiver IF to BB sections 224. The baseband processing unitprocesses the multiple symbol streams to produce the inbound data.

The RX RF to IF section 204 provides one or more of the follow benefitsand/or includes one or more of the following characteristics: thesuper-heterodyne receiver architecture is more optimal with respect todie area and power consumption than a corresponding direct conversionreceiver; using a complex baseband impedance in the FTBPF 222 allows forthe center frequency of the bandpass filter to be shifted thus enablingthe center of the on-chip high-Q image rejection filter to be tuned tothe desired frequency; and only a signal local oscillator is needed,which can be used for the down-conversion mixer and the FTBPF 222.

FIG. 16 is a schematic block diagram of another embodiment of an RF toIF receiver section 232 of an SOC 230 that includes an FEM interfacemodule (which includes a transformer T1 and/or a tunable capacitornetwork C1), a frequency translated bandpass filter (FTBPF) 234, a lownoise amplifier module (LNA) 206, a mixing section (which includes amixing module 208 and/or mixed buffers 210-212). The SOC 230 alsoincludes a receiver IF to BB section 224, the SAW-less transmittersection 202, and may further include the baseband processing unit, theprocessing module, and/or the power management unit.

In an example of operation, an inbound RF signal is received via theantenna. The inbound RF signal includes a desired signal component at RFand an undesired component at a frequency above or below RF (above isshown). With respect the local oscillation of the RF to IF section 232(e.g., f_(LO)), an image signal component may occur if a signal ispresent at r_(RF)−2f_(IF). The antenna provides the inbound RF signal tothe FEM, which processes it as previously discussed and/or as will bediscussed with reference to one or more of the subsequent figures. Thetransformer T1 receives the FEM processed inbound RF signal and convertsit into a differential signal, which is filtered by the tunablecapacitor network C1 based on control signals from the SOC processingresources.

The FTBPF (various embodiments of which will be described in several ofthe subsequent figures) 234 filters the inbound RF signal by attenuatingan image signal component and an undesired signal component and passing,substantially unattenuated, a desired RF signal component. For example,assume that the FTBPF frequency translates a narrow band basebandbandpass filter response to RF (e.g., the carrier frequency of thedesired signal component) to produce a high-Q RF filter response. Thenarrow band high-Q RF filter filters out the image signal component andthe undesired signal component and passes, substantially unattenuated,the desired signal component.

The low noise amplifier module (LNA) 206 amplifies the desired inboundRF signal component to produce an amplified desired inbound RF signal.The LNA 206 may receive a control signal from the SOC 230 processingresources, wherein the control signal indicates a setting for at leastone of gain, linearity, bandwidth, efficiency, noise, output dynamicrange, slew rate, rise rate, settling time, overshoot, and stabilityfactor.

The mixing module 208 receives the amplified desired inbound RF signaland converts it into an in-phase (I) signal component and a quadrature(Q) signal component using a π/2 phase shifter or other type of phasemanipulation circuit. A mixer of the mixing module 208 mixes the Isignal component with an I signal component of a local oscillation(e.g., f_(LO)) to produce an I mixed signal and another mixer mixes theQ signal component with a Q signal component of the local oscillation toproduce a Q mixed signal. Note that the I and Q mixed signals may bedifferential signals or single ended signals; differential signals areshown.

The mixer buffers buffer the I and Q mixed signals, which aresubsequently provided to the filters (e.g., bandpass filters). Thefilters 236 238 filter the I and Q mixed signals, which are subsequentlyprovided to the RX IF to BB section 224.

The receiver IF to BB section 224 includes a mixing section and acombining & filtering section. The mixing section mixes the inbound IFsignal with a second local oscillation to produce I and Q mixed signals.The combining & filtering section combines the I and Q mixed signals toproduce a combined signal and then filters the combined signal toproduce the one or more inbound symbol streams.

While the present RF to IF section 232 is shown coupled to a singleantenna for SISO (single input single output) communications, theconcepts are applicable to MISO (multiple input single output)communications and to MIMO (multiple input multiple output)communications. In these instances, a plurality of antennas (e.g., 2 ormore) is coupled to a corresponding number of FEMs (or a less number ofFEMs depending on the receive paths within a FEM). The FEMS are coupledto a plurality of receiver RF to IF sections (e.g., same number as thenumber of antennas), which are, in turn, coupled to a correspondingnumber of receiver IF to BB sections. The baseband processing unitprocesses the multiple symbol streams to produce the inbound data.

FIG. 17 is a schematic block diagram of another embodiment of an RF toIF receiver section 242 of an SOC 240 that includes a front end moduleinterface (which may include a transformer T1 and/or a tunable capacitornetwork C1), a pair of inverter-based low noise amplifier modules (LNA)244-246, a mixing module 248, and a pair of transimpedance amplifiermodules (each may include a transimpedance amplifiers (TIA) 250-252, animpedance (Z) 254-256, and/or a buffer 258-260). The SOC 240 alsoincludes a receiver IF to BB section 224, the SAW-less transmittersection 202 and may further include the baseband processing unit, theprocessing module, and the power management unit.

In an example of operation, an inbound RF signal is received via theantenna. The inbound RF signal includes a desired signal component at RFand an undesired component at a frequency above or below RF (above isshown). With respect the local oscillation of the RF to IF section(e.g., f_(LO)), an image signal component may occur if a signal ispresent at r_(RF)−2f_(IF). The antenna provides the inbound RF signal tothe FEM, which processes it as previously discussed and/or as will bediscussed with reference to one or more of the subsequent figures. Thetransformer T1 receives the FEM processed inbound RF signal and convertsit into a differential signal, which is filtered by the tunablecapacitor network C1 based on control signals from the SOC 240processing resources.

A first LNA 244 amplifies a positive leg of the inbound RF signal toproduce a positive leg current RF signal and the second LNA 246amplifies a negative leg of the inbound RF signal to produce a negativeleg current RF signal. Each of the LNAs 244-246 may receive a controlsignal from the SOC 240 processing resources, wherein the control signalindicates a setting for at least one of gain, linearity, bandwidth,efficiency, noise, output dynamic range, slew rate, rise rate, settlingtime, overshoot, and stability factor.

The mixing module 248 receives the positive leg current RF signal andnegative leg current RF signal and converts them into an in-phase (I)current signal and a quadrature (Q) current signal using a π/2 phaseshifter or other type of phase manipulation circuit. A mixer of themixing module 248 mixes the I current signal with an I current signal ofa local oscillation (e.g., f_(LO)) to produce an I mixed current signal(e.g., i_(BB-I)) and mixes the Q current signal with a Q current signalof the local oscillation to produce a Q mixed current signal (e.g.,i_(BB-Q)). Note that the I and Q mixed current signals may bedifferential signals or single ended signals; differential signals areshown. Further note that each of the I and Q mixed current signalsincludes an image component and a desired component.

The TIAs 250-252 (of which one or more embodiments are discussed withreference to one or more of the subsequent figures) receive the I and Qmixed current signals and convert them into voltages, via the impedances(z), such that the resulting I and Q voltage mixed signals having anattenuated image component and a substantially unattenuated desiredcomponent. The structure of the TIAs 250-252 in combination with theimpedances (z), provide a low impedance path from their inputs to areference potential (e.g., Vdd or ground) for frequencies below the IFand provide a low impedance path between their respective inputs forfrequencies above the IF. For frequencies proximal to the IF, the TIA250-252 amplifies them and converts them into a voltage signal. Thebuffers provide the I and Q voltage signal components to the RX IF to BBsection 224 which converts them into an inbound symbol stream.

The RX RF to IF section 224 provides one or more of the follow benefitsand/or includes one or more of the following characteristics: thesuper-heterodyne receiver architecture is more optimal with respect todie area and power consumption than a corresponding direct conversionreceiver; and substantially eliminates offset and flicker noise, whichare inherent problems of a super heterodyne receiver.

FIG. 18 is a schematic block diagram of another embodiment of an RF toIF receiver section 271 of an SOC 270 that includes an FEM interfacemodule (which may include a transformer T1 and/or a tunable capacitornetwork C1), an RF frequency translated bandpass filter (FTBPF) 272, apair of inverter-based low noise amplifier modules (LNA) 274-276, amixing module 278, a pair of transimpedance amplifier modules (each ofwhich may include a transimpedance amplifier (TIA) 280-282, an impedance(Z) 284-286, and/or a buffer 280-286), and an IF FTBPR 288. The SOC 270also includes a receiver IF to BB section 224, the SAW-less transmittersection 202 and may further include the baseband processing unit, theprocessing module, and the power management unit.

In this embodiment, the RF FTBPF 272 functions as described withreference to FIG. 16 and the TIAs 280-282 function as described withreference to FIG. 17. The IF FTBPF 288 is clocked from the RF clock andhas its center frequency at RF. The bandwidth of the IF FTBPF 288 issuch that the image signal is substantially attenuated and the desiredsignal component is passed substantially unattenuated. As such, theimage is filtered three times: by the RF FTBPF 272, by the TIAs 280-282,and then by the IF FTBPF 288.

The RX RF to IF section 271 provides one or more of the follow benefitsand/or includes one or more of the following characteristics: uses twoclocks (e.g., RF and LO2); the super-heterodyne receiver architecture ismore optimal with respect to die area and power consumption than acorresponding direct conversion receiver; flicker noise is notimportant, so the baseband circuits will be compact; can useinductor-less LNAs 274-276 (e.g., LNAs may be implemented as inverters);no DC offset issues, thus, offset cancellation circuit which is large inarea is eliminated; receiver architecture has comparable frequencyplanning flexibility as a direct-conversion receiver; includesprogressive bandpass filtering stages over the RX chain; and can bereadily integrated into an SOC 270.

FIG. 19 is a schematic block diagram of another embodiment of an RF toIF receiver section 292 of an SOC 290 that includes the FEM interfacemodule (which may include a transformer T1 and/or a tunable capacitornetwork C1), an RF frequency translated bandpass filter (FTBPF) 272, apair of inverter-based low noise amplifier modules (LNA) 274-276, amixing module 278, a pair of transimpedance amplifier modules (each ofwhich may include a transimpedance amplifier (TIA) 280-282, an impedance(Z) 284-286, and/or a buffer 280-286), and an IF FTBPR 294. The SOC 290also includes a receiver IF to BB section 224, the SAW-less transmittersection 202 and may further include the baseband processing unit, theprocessing module, and the power management unit.

In this embodiment, the IF FTBPF 294 functions as described withreference to FIG. 15 and the TIAs function as described with referenceto FIG. 17. The RF FTBPF 272 is clocked from the LO clock and has itscenter frequency at IF. The bandwidth of the RF FTBPF 272 is such thatthe image signal is substantially attenuated and the desired signalcomponent is passed substantially unattenuated. As such, the image isfiltered three times: by the RF FTBPF 272, by the TIAs 280-282, and thenby the IF FTBPF 294.

The RX RF to IF section 292 provides one or more of the follow benefitsand/or includes one or more of the following characteristics: uses oneclock (e.g., LO2); the super-heterodyne receiver architecture is moreoptimal with respect to die area and power consumption than acorresponding direct conversion receiver; flicker noise is notimportant, so the baseband circuits will be compact; can useinductor-less LNAs (e.g., LNAs may be implemented as inverters); no DCoffset issues, thus, offset cancellation circuit which is large in areais eliminated; receiver architecture has comparable frequency planningflexibility as a direct-conversion receiver; includes progressivebandpass filtering stages over the RX chain; and can be readilyintegrated into an SOC 290.

FIG. 20 is a schematic block diagram of another embodiment of a dualband RF to IF receiver section 302 of an SOC 300 that includes an FEMinterface module (which may include a transformer T1 and/or a tunablecapacitor network C1), an RF frequency translated bandpass filter(FTBPF) 304, a pair of low noise amplifier modules (LNA) 306-308, and amixing section (which may include a pair of mixing modules 310-312,mixing buffers 314-320, and/or filters 322-328). The SOC 300 alsoincludes a receiver IF to BB section 224, the SAW-less transmittersection 202 and may further include the baseband processing unit, theprocessing module, and the power management unit.

In an example of operation, an inbound RF signal is received via theantenna. The inbound RF signal includes one or more desired signalcomponents (e.g., one at f_(RF1) and the other at f_(RF2)) and anundesired component(s) at a frequency above or below RF (above isshown). With respect the local oscillations (one for the first desiredRF signal and another for the second desired RF signal—f_(LO)1 andf_(LO2)) of the RF to IF section, one or more image signal componentsmay occur if a signal is present at r_(RF1)−2f_(IF1) and/or atr_(RF2)−2f_(IF2). The antenna provides the inbound RF signal to the FEM,which processes it as previously discussed and/or as will be discussedwith reference to one or more of the subsequent figures. The transformerT1 receives the FEM processed inbound RF signal and converts it into adifferential signal, which is filtered by the tunable capacitor networkC1 based on control signals from the SOC processing resources.

The FTBPF 304 (various embodiments of which will be described in severalof the subsequent figures) filters the inbound RF signal by attenuatingthe image signal components and the undesired signal components andpassing, substantially unattenuated, the desired RF signal components.For example, assume that the FTBPF frequency translates a narrow bandbaseband bandpass filter to RF1 and RF2 (e.g., the carrier frequenciesof the desired signal component) to produce two high-Q RF filters. Eachof the narrow band high-Q RF filters respectively filters out the imagesignal component and the undesired signal component and passes,substantially unattenuated, the desired signal component.

A first low noise amplifier module (LNA) amplifies the desired inboundRF1 signal component, when included in the inbound RF signal, to producean amplified desired inbound RF1 signal and a second LNA amplifies thedesired inbound RF2 signal component, when included in the inbound RFsignal, to produce an amplified desired inbound RF2 signal. Each of theLNAs may receive a control signal from the SOC processing resources,wherein the control signal indicates a setting for at least one of gain,linearity, bandwidth, efficiency, noise, output dynamic range, slewrate, rise rate, settling time, overshoot, and stability factor.

A first mixing module of the mixing section receives the amplifieddesired inbound RF1 signal and converts it into an in-phase (I) signalcomponent and a quadrature (Q) signal component using a π/2 phaseshifter or other type of phase manipulation circuit. A mixer of thefirst mixing module mixes the I signal component with an I signalcomponent of a local oscillation (e.g., f_(LO1)) to produce a first Imixed signal and mixes the Q signal component with a Q signal componentof the local oscillation to produce a first Q mixed signal. Note thatthe first I and Q mixed signals may be differential signals or singleended signals; differential signals are shown.

A second mixing module of the mixing section receives the amplifieddesired inbound RF2 signal and converts it into an in-phase (I) signalcomponent and a quadrature (Q) signal component using a π/2 phaseshifter or other type of phase manipulation circuit. A mixer of thesecond mixing module mixes the I signal component with an I signalcomponent of a local oscillation (e.g., f_(LO2)) to produce a second Imixed signal and mixes the Q signal component with a Q signal componentof the local oscillation to produce a second Q mixed signal. Note thatthe second I and Q mixed signals may be differential signals or singleended signals; differential signals are shown.

Each of the mixer buffers their respective I and Q mixed signals, whichare subsequently provided to the filters (e.g., bandpass filters). Thefilters filter the I and Q mixed signals, which are subsequentlyprovided to the RX IF to BB section 224.

While the present RF to IF section 302 is shown coupled to a singleantenna for SISO (single input single output) communications, theconcepts are applicable to MISO (multiple input single output)communications and to MIMO (multiple input multiple output)communications. In these instances, a plurality of antennas (e.g., 2 ormore) is coupled to a corresponding number of FEMs (or a less number ofFEMs depending on the receive paths within a FEM). The FEMS are coupledto a plurality of receiver RF to IF sections (e.g., same number as thenumber of antennas), which are, in turn, coupled to a correspondingnumber of receiver IF to BB sections. The baseband processing unitprocesses the multiple symbol streams to produce the inbound data.

The RX RF to IF section 302 provides one or more of the follow benefitsand/or includes one or more of the following characteristics: is capableof receiving two inbound RF signals using a single RF input section;eliminates the need for two external SAW filters, one FTBPF 304efficiently filters two channels (e.g., RF1 and RF2 signals); the centerfrequency of both high-Q RF filters is controlled by the localoscillation clocks; and can be readily integrated into an SOC 300.

FIG. 21 is a schematic block diagram of another embodiment of an RF toIF receiver section 332 of an SOC 330 that includes an FEM interfacemodule (which may include a transformer T1 and/or a tunable capacitornetwork C1), a low noise amplifier module (LNA) 336 with a frequencytranslated bandpass filter (FTBPF) 338, an RF frequency translatedbandpass filter (FTBPF) with negative resistance 334, and a mixingsection (which may include a mixing module 340, mixed buffers 342-344,and/or filters 346-348). The SOC 330 also includes a receiver IF to BBsection 224, the SAW-less transmitter section 202 and may furtherinclude the baseband processing unit, the processing module, and thepower management unit.

In this embodiment, a parasitic resistance (Rp) is shown associated withthe FEM interface module to represent switch loss (e.g., of the FTBPF)and/or inductor loss. The inductor loss is primarily due to ohmicresistance of the windings of the transformer (e.g., metal traces on asubstrate) and/or substrate loss underneath the transformer and, withthe tuning of the capacitor C1, is a dominant component of impedance atRF. A lower parasitic resistance reduces the quality factor of filteringand reduces the far-out attenuation of frequencies away from RF. Thenegative resistance in the FTBPF 334 effectively increases the parasiticresistance, thereby increasing the quality factor and far-outattenuation.

In an example of operation, an inbound RF signal is received via theantenna. The inbound RF signal includes a desired signal component at RFand an undesired component at a frequency above or below RF (above isshown). With respect the local oscillation of the RF to IF section 332(e.g., f_(LO)), an image signal component may occur if a signal ispresent at r_(RF)−2f_(IF). The antenna provides the inbound RF signal tothe FEM, which processes it as previously discussed and/or as will bediscussed with reference to one or more of the subsequent figures. Thetransformer T1 receives the FEM processed inbound RF signal and convertsit into a differential signal, which is filtered by the tunablecapacitor network C1 based on control signals from the SOC 330processing resources.

The FTBPF 334 (various embodiments of which will be described in severalof the subsequent figures) filters the inbound RF signal by attenuatingan image signal component and an undesired signal component and passing,substantially unattenuated, a desired RF signal component. For example,assume that the FTBPF 334 frequency translates a narrow band basebandbandpass filter to RF (e.g., the carrier frequency of the desired signalcomponent) to produce a high-Q RF filter. The narrow band high-Q RFfilter filters out the image signal component and the undesired signalcomponent and passes, substantially unattenuated, the desired signalcomponent. In addition, the FTBPF 334 includes a negative resistancethat may be comparable to the parasitic resistance (Rp) and compensatesfor the losses represented by the parasitic resistance (e.g.,effectively increases the quality factor of filtering and increasesfar-out attenuation). The negative resistance can be dynamicallyadjusted via a control signal from the SOC 330 processing resourcesbased on variations of the parasitic resistance.

The low noise amplifier module (LNA) 336 amplifies the desired inboundRF signal component to produce an amplified desired inbound RF signal.The LNA 336 may receive a control signal from the SOC 330 processingresources, wherein the control signal indicates a setting for at leastone of gain, linearity, bandwidth, efficiency, noise, output dynamicrange, slew rate, rise rate, settling time, overshoot, and stabilityfactor. In addition, the LNA 336 may include an RF FTBPF 338 thatfunctions similarly to RF FTBPF 334 previously discussed to furtherattenuate the image signal component.

The mixing module 340 receives the amplified desired inbound RF signaland converts it into an in-phase (I) signal component and a quadrature(Q) signal component using a π/2 phase shifter or other type of phasemanipulation circuit. A mixer of the mixing module 340 mixes the Isignal component with an I signal component of a local oscillation(e.g., f_(LO)) to produce an I mixed signal and mixes the Q signalcomponent with a Q signal component of the local oscillation to producea Q mixed signal. Note that the I and Q mixed signals may bedifferential signals or single ended signals; differential signals areshown.

The mixer buffers buffer the I and Q mixed signals, which aresubsequently provided to the filters (e.g., bandpass filters). Thefilters filter the I and Q mixed signals, which are subsequentlyprovided to the RX IF to BB section 224.

While the present RF to IF section 332 is shown coupled to a singleantenna for SISO (single input single output) communications, theconcepts are applicable to MISO (multiple input single output)communications and to MIMO (multiple input multiple output)communications. In these instances, a plurality of antennas (e.g., 2 ormore) is coupled to a corresponding number of FEMs (or a less number ofFEMs depending on the receive paths within a FEM). The FEMS are coupledto a plurality of receiver RF to IF sections (e.g., same number as thenumber of antennas), which are, in turn, coupled to a correspondingnumber of receiver IF to BB sections. The baseband processing unitprocesses the multiple symbol streams to produce the inbound data.

The RX RF to IF 332 section provides one or more of the follow benefitsand/or includes one or more of the following characteristics: eliminatesthe need for off-chip SAW filters and matching components; qualityfactor of the FTBPF 334 is enhanced by the negative resistance; inductorloss can be compensated, thus inductors can have a lower tolerance;reduces the need for the number of thick metal layers, reducing diefabrication costs; the center frequency of both high-Q RF filters iscontrolled by the local oscillation clocks; and can be readilyintegrated into an SOC 330.

FIG. 22 is a schematic block diagram of another embodiment of an RF toIF receiver section 352 of an SOC 350 that includes an FEM interfacemodule (which may include a transformer T1 and/or a tunable capacitornetwork C1), a frequency translated bandpass filter (FTBPF) having acomplex baseband (BB) impedance 354, a low noise amplifier module (LNA)356, and a mixing section (which may include a mixing module 340 and/ormixed buffers 342-344). The SOC 350 also includes a receiver IF to BBsection 224, the SAW-less transmitter section 202 and may furtherinclude the baseband processing unit, the processing module, and thepower management unit.

In an example of operation, an inbound RF signal is received via theantenna. The inbound RF signal includes a desired signal component at RFand an undesired component at a frequency above or below RF (above isshown). With respect the local oscillation of the RF to IF section(e.g., f_(LO)), an image signal component may occur if a signal ispresent at R_(RF)−2f_(IF). The antenna provides the inbound RF signal tothe FEM, which processes it as previously discussed and/or as will bediscussed with reference to one or more of the subsequent figures. Thetransformer T1 receives the FEM processed inbound RF signal and convertsit into a differential signal, which is filtered by the tunablecapacitor network C1 based on control signals from the SOC 350processing resources.

The FTBPF 354 (various embodiments of which will be described in severalof the subsequent figures) filters the inbound RF signal by attenuatingan image signal component and an undesired signal component and passing,substantially unattenuated, a desired RF signal component. For example,assume that the FTBPF 354 frequency translates a narrow band offsetbaseband bandpass filter to RF (e.g., the carrier frequency of thedesired signal component) to produce a high-Q RF filter. The narrow bandhigh-Q RF filter filters out the image signal component and theundesired signal component and passes, substantially unattenuated, thedesired signal component. With the use of a complex baseband impedance354, the center frequency of the narrow band baseband BPF can beadjusted. For instance, the bandpass region can be shifted higher orlower in frequency based on adjustments to the complex BB impedance 354.

The low noise amplifier module (LNA) 356 amplifies the desired inboundRF signal component to produce an amplified desired inbound RF signal.The LNA 356 may receive a control signal from the SOC 350 processingresources, wherein the control signal indicates a setting for at leastone of gain, linearity, bandwidth, efficiency, noise, output dynamicrange, slew rate, rise rate, settling time, overshoot, and stabilityfactor.

The mixing module 340 of the mixing section receives the amplifieddesired inbound RF signal and converts it into an in-phase (I) signalcomponent and a quadrature (Q) signal component using a π/2 phaseshifter or other type of phase manipulation circuit. A mixer of themixing module 340 mixes the I signal component with an I signalcomponent of a local oscillation (e.g., f_(LO)) to produce an I mixedsignal and mixes the Q signal component with a Q signal component of thelocal oscillation to produce a Q mixed signal. Note that the I and Qmixed signals may be differential signals or single ended signals;differential signals are shown.

The mixer buffers 342-344 buffer the I and Q mixed signals, which aresubsequently provided to the filters (e.g., bandpass filters). Thefilters 346-348 filter the I and Q mixed signals, which are subsequentlyprovided to the RX IF to BB section 224.

While the present RF to IF section 352 is shown coupled to a singleantenna for SISO (single input single output) communications, theconcepts are applicable to MISO (multiple input single output)communications and to MIMO (multiple input multiple output)communications. In these instances, a plurality of antennas (e.g., 2 ormore) is coupled to a corresponding number of FEMs (or a less number ofFEMs depending on the receive paths within a FEM). The FEMS are coupledto a plurality of receiver RF to IF sections (e.g., same number as thenumber of antennas), which are, in turn, coupled to a correspondingnumber of receiver IF to BB sections. The baseband processing unitprocesses the multiple symbol streams to produce the inbound data.

The RX RF to IF section 352 provides one or more of the follow benefitsand/or includes one or more of the following characteristics: thesuper-heterodyne receiver is optimized for minimum area and power incomparison to a comparable direct conversion receiver; the use of acomplex baseband impedance in the FTBPF 354 allows the center frequencyof the bandpass filter to be shifted; the complex baseband impedance 354may be implemented with switches and capacitors and its center iscontrolled by the LO clock; the center of the on-chip high-Q imagerejection filter (e.g., FTBPF) is tuned to the desired frequency usingthe same LO clock used by the down-conversion mixer; RF to IF sections352 uses a signal phase locked loop (PLL); and can be readily integratedinto an SOC 350.

FIG. 23 is a schematic block diagram of an embodiment of a transmittersection of an SOC 360 that includes an up-conversion mixing module 362,a transmitter local oscillation module (LO) 364, a frequency translatedbandpass filter (FTBPF) 366, an output module (which may includecapacitor arrays 368-370 and/or a transformer T1), and a power amplifierdriver (PAD) 372. The PAD 372 includes transistors Q1-Q2, a resistor R1,and a capacitor C1 coupled as shown. Note that the capacitor C1 and/orresistor R1 may be implemented using one or more transistors Q1-Q2. TheSOC 360 also includes the SAW-less receiver section 364 and may furtherinclude the baseband processing unit, the processing module, and thepower management unit.

In an example of operation, the up-conversion mixing module 362 receivesa baseband (BB) I and Q signals (e.g., an analog and quadraturerepresentation of an outbound symbol stream). The up-conversion mixingmodule 362 may employ a direct conversion topology or a super heterodynetopology to convert the BB I and Q signals into an up-converted signal,which has a carrier frequency at the desired RF.

The FTBPF 366 (various embodiments of which will be described in severalof the subsequent figures) filters the up-converted signal byattenuating out-of-band signal components and passing, substantiallyunattenuated, the up-converted signal. For example, assume that theFTBPF 366 frequency translates a narrow band baseband bandpass filter toRF (e.g., the carrier frequency of the up-converted signal) to produce ahigh-Q RF filter. The narrow band high-Q RF filter filters out theout-of-band signals and passes, substantially unattenuated, theup-converted signal.

The capacitor arrays 368-370 provide an adjustable low pass filter thatfilters common-mode noise and/or line noise. The transformer T1 convertsthe differential up-converted signal into a single-ended signal, whichis subsequently amplified by the PAD 372. The PAD 372 provides theamplified up-converted signal to the FEM, which further amplifies it,isolates it from an inbound RF signal, and provides it to the antennafor transmission.

The TX section provides one or more of the follow benefits and/orincludes one or more of the following characteristics: using an FTBPF366 clocked by the TX LO 364 at the LC load of the transmitterup-converter mixer reduces transmitter noise and other out-of-bandsignals at RX frequency with minimal impact on the desired TX signal;the baseband impedances of high-Q FTBPF 366 can be implemented usingcapacitors and its center frequency is controlled by the TX LO 364; TXSAW filters are eliminated; and provides for ease of integration intothe SOC 360.

FIG. 24 is a schematic block diagram of another embodiment of atransmitter section 382 of an SOC 380 an up-conversion mixing module362, a transmitter local oscillation module (LO), a frequency translatedbandpass filter (FTBPF), an output module (which may include capacitorarrays 368-370 and/or a transformer T1), and a power amplifier driver(PAD) 372. The PAD 372 includes transistors, a resistor, and a capacitorcoupled as shown. Note that the capacitor and/or resistor may beimplemented using one or more transistors. The SOC 380 also includes theSAW-less receiver section 364 and may further include the basebandprocessing unit, the processing module, and the power management unit.

In this embodiment, the up-conversion mixing module includes the passivemixing structure as shown, which can be operated from a 50% duty cycleLO clock. In an example of operation, the LO I and Q signal componentsare mixed via the circuitry on the left of the diagram and the BB I andQ signal components are mixed via the circuitry on the right side of thedrawing. The mixed LO signal components are then mixed with the mixed BBsignals components to produce the up-converted signal. For instance, theLO_I+pushes energy into its corresponding capacitor and the LO_I− pullsenergy from the capacitor (or vice versa) to produce a varying voltageacross the capacitor at a rate corresponding to the LO. The LO_Q+ andLO_Q− do a similar function with respect to their capacitor, justshifted 90°. The varying voltages across the capacitors are addedtogether via the summing node to produce the mixed LO signalscomponents. A like process occurs on the baseband side of the mixer.

The TX section 382 provides one or more of the follow benefits and/orincludes one or more of the following characteristics: transistorsdriven by Vb1 and Vb2 are high voltage transistors (e.g., Vdsvoltage >2.5 volts); and the TX architecture provides a low-powerarea-efficient design and uses a passive mixer that is driven by 50%duty-cycle LO clocks, which reduces power consumption in comparison witha mixer driven by a 25% duty-cycle clock.

FIG. 25 is a schematic block diagram of an embodiment of a portion of anRF to IF receiver section that includes a single-ended FTBPF (frequencytranslated bandpass filter) 394. The portion of the RX RF to IF sectionincludes the transformer T1, the variable capacitor network C1, and theLNA 392. The FTBPF 394 includes a plurality of transistors (e.g., aswitching network) and a plurality of baseband impedances (Z_(BB)(s))396-402.

In an example of operation, the front-end module (FEM) 390 receives aninbound RF signal via an antenna, processes the signal as previouslydiscussed and/or as will be discussed with reference to one or more ofthe subsequent figures, and provides the FEM 390 processed inbound RFsignal to the transformer T1. The transformer T1 steps up or steps downthe voltage level of the inbound RF signal, which is subsequentlyfiltered by the variable capacitor network C1. Note that the transformerT1 may be omitted if an adjustment of the voltage level of the inboundRF signal is not needed and/or the isolation provided by the transformerT1 is not needed.

The FTBPF 394 provides a high-Q (quality factor) RF filter that filtersthe inbound RF signal such that desired signal components of the inboundRF signal are passed substantially unattenuated to the LNA 392 andundesired signal components (e.g., blockers, images, etc.) areattenuated. To achieve such a filter, the baseband impedances((Z_(BB)(s)) 396-402 collectively provide a low-Q baseband filter havinga corresponding filter response, where each of the baseband impedancesmay be a capacitor, a switched capacitor filter, a switch capacitorresistance, and/or a complex impedance. Note that the impedance of eachof the baseband impedances may be the same, different, or combinationthereof. Further note that the impedances of each of baseband impedancesmay be adjusted via control signal from the SOC processing resources toadjust the properties of the low-Q baseband filter (e.g., bandwidth,attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce the high-Q RF filter via the clock signals providedby a clock generator 404. FIG. 27 illustrates the frequency translationof the low-Q baseband filter response to the high-Q RF filter responseand FIG. 26 illustrates an embodiment of the clock generator 404.

As shown in FIG. 26, the clock generator 404 (of which, variousembodiments will be discussed with reference to one or more of thesubsequent figures) produces four clocks signals each having a 25% dutycycle and sequentially phase offset by 90°. The clock signals have afrequency corresponding to the carrier frequency of the inbound RFsignal and can be adjusted to better track the carrier frequency. Theclock generator 404 may also generate local oscillation clock signals(not shown), which are used to down-convert the inbound RF signal to aninbound IF signal.

Returning to the discussion of FIG. 25, the FTBPF 394 receives the clocksignals, which are coupled to the transistors to sequentially coupletheir respective baseband impedances to the inbound RF signal. With theclock rate being at RF (e.g., the carrier frequency(ies) of the desiredcomponent of the inbound RF signal), the baseband impedance affects(e.g., collectively the low-Q bandpass filter) is shifted to RF creatingthe high-Q RF bandpass filter.

FIG. 28 is a schematic block diagram of an embodiment of a single-endedFTBPF 410 that includes 4 transistors and 4 capacitors, which providethe baseband impedances. The 4 capacitors provide a collective basebandimpedance, which provides a low-Q baseband bandpass filter as show inFIG. 29. In particular, the impedance of a capacitor (or four inparallel) is 1/sC, where s is 2πf. Thus, as the frequency (f) approacheszero, the impedance of a capacitor approaches infinity and, as thefrequency (f) increases, the impedance of the capacitor decreases.Further, the phase of the capacitor changes from +90° to −90° at zerofrequency.

Returning to the discussion of FIG. 28, as the clock signals are appliedto the transistors, the capacitors are coupled to the common node of theFTBPF 410 (e.g., the input of the FTBPF). In this manner, the propertiesof the capacitor(s) are shifted in frequency to the rate of the clocksignals (e.g., f_(LO)) as shown in FIG. 30. In particular, the impedanceof the capacitor (and of the four capacitors in parallel) is shifted tothe frequency of the clocks. With near infinite impedance at LO, theFTBPF 410 has a high impedance at LO and, and such, has little affect onsignal components having a carrier frequency comparable to LO. As thefrequency deviates from LO, the impedance of the FTBPF 410 decreasesand, as such, the FTBPF 410 effectively “shorts” signal componentshaving a carrier frequency that is not comparable to LO.

FIG. 31 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes a differential FTBPF 412(frequency translated bandpass filter). The portion of the RX RF to IFsection includes the transformer T1, the variable capacitor network C1,and the LNA 393. The FTBPF 412 includes a plurality of transistors and aplurality of baseband impedances (Z_(BB)(s)) 414-420.

In an example of operation, the front-end module (FEM) 390 receives aninbound RF signal via an antenna, processes the signal as previouslydiscussed and/or as will be discussed with reference to one or more ofthe subsequent figures, and provides the FEM 390 processed inbound RFsignal to the transformer T1. The transformer T1 converts thesingle-ended inbound RF signal into a differential inbound RF signal.

The FTBPF 412 provides a differential high-Q (quality factor) RF filterthat filters the differential inbound RF signal such that desired signalcomponents of the inbound RF signal are passed substantiallyunattenuated to the LNA 393 and undesired signal components (e.g.,blockers, images, etc.) are attenuated. To achieve such a filter, thebaseband impedances ((Z_(BB)(s)) 414-420 collectively provide a low-Qbaseband filter having a corresponding filter response, where each ofthe baseband impedances may be a capacitor, a switched capacitor filter,a switch capacitor resistance, and/or a complex impedance. Note that theimpedance of each of the baseband impedances may be the same, different,or combination thereof. Further note that the impedances of each ofbaseband impedances may be adjusted via control signal from the SOCprocessing resources to adjust the properties of the low-Q basebandfilter (e.g., bandwidth, attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce the high-Q RF filter via the clock signals providedby a clock generator 422. FIG. 33 illustrates the frequency translationof the low-Q baseband filter to the high-Q RF filter and FIG. 32illustrates an embodiment of the clock generator 422.

As shown in FIG. 32, the clock generator 422 (of which, variousembodiments will be discussed with reference to one or more of thesubsequent figures) produces four clocks signals each having a 25% dutycycle and sequentially offset by 90°. The clock signals have a frequencycorresponding to the carrier frequency of the inbound RF signal and canbe adjusted to better track the carrier frequency. The clock generator422 may also generate local oscillation clock signals (not shown), whichare used to down-convert the inbound RF signal to an inbound IF signal.

Returning to the discussion of FIG. 31, the FTBPF 412 receives the clocksignals, which are coupled to the transistors to sequentially coupletheir respective baseband impedances to the inbound RF signal. With theclock rate being at RF (e.g., the carrier frequency(ies) of the desiredcomponent of the inbound RF signal), the baseband impedance affects(e.g., collectively the low-Q bandpass filter) is shifted to RF creatingthe high-Q RF bandpass filter.

FIG. 34 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes a single-ended FTBPF 430(frequency translated bandpass filter). The portion of the RX RF to IFsection includes the transformer T1, the variable capacitor network C1,and the LNA 392. The FTBPF 430 includes a plurality of transistors and acomplex baseband filter 432.

In an example of operation, the front-end module (FEM) 390 receives aninbound RF signal via an antenna, processes the signal as previouslydiscussed and/or as will be discussed with reference to one or more ofthe subsequent figures, and provides the FEM 390 processed inbound RFsignal to the transformer T1. The transformer T1 steps up or steps downthe voltage level of the inbound RF signal, which is subsequentlyfiltered by the variable capacitor network C1. Note that the transformerT1 may be omitted if an adjustment of the voltage level of the inboundRF signal is not needed and/or the isolation provided by the transformerT1 is not needed.

The FTBPF 430 provides a high-Q (quality factor) RF filter that filtersthe inbound RF signal such that desired signal components of the inboundRF signal are passed substantially unattenuated to the LNA 392 andundesired signal components (e.g., blockers, images, etc.) areattenuated. To achieve such a filter, the complex baseband filter 432provides a low-Q baseband filter that can have its bandpass regionoffset from zero frequency. Note that the properties (e.g., bandwidth,attenuation rate, quality factor, frequency offset, etc.) of the complexbaseband filter 432 may be adjusted via control signal from the SOCprocessing resources.

The frequency offset low-Q baseband filter is frequency translated tothe desired RF frequency to produce a frequency offset high-Q RF filtervia the clock signals provided by a clock generator 434. FIG. 36illustrates the frequency translation of the frequency offset low-Qbaseband filter to the frequency offset high-Q RF filter and FIG. 35illustrates an embodiment of the clock generator 434.

As shown in FIG. 35, the clock generator 434 (of which, variousembodiments will be discussed with reference to one or more of thesubsequent figures) produces four clocks signals each having a 25% dutycycle and sequentially offset by 90°. The clock signals have a frequencycorresponding to the carrier frequency of the inbound RF signal and canbe adjusted to better track the carrier frequency. The clock generator434 may also generate local oscillation clock signals (not shown), whichare used to down-convert the inbound RF signal to an inbound IF signal.Alternatively, one or more of the clock signals for the FTBPF 430 may beused for the LO clock signals.

Returning to the discussion of FIG. 34, the FTBPF 430 receives the clocksignals, which are coupled to the transistors to sequentially couple thecomplex baseband filter to the inbound RF signal. With the clock ratebeing at RF (e.g., the carrier frequency(ies) of the desired componentof the inbound RF signal), the response of the complex baseband filter432 is shifted to RF (and/or to LO) creating the high-Q RF bandpassfilter.

FIG. 37 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes a differential FTBPF 440(frequency translated bandpass filter). The portion of the RX RF to IFsection includes the transformer T1, the variable capacitor network C1,and the LNA 393. The differential FTBPF 440 includes a plurality oftransistors and a complex baseband filter 442.

In an example of operation, the front-end module 390 (FEM) receives aninbound RF signal via an antenna, processes the signal as previouslydiscussed and/or as will be discussed with reference to one or more ofthe subsequent figures, and provides the FEM 390 processed inbound RFsignal to the transformer T1. The transformer T1 converts thesingle-ended inbound RF signal into a differential inbound RF signal.

The differential FTBPF 440 provides a high-Q (quality factor) RF filterthat filters the differential inbound RF signal such that desired signalcomponents of the inbound RF signal are passed substantiallyunattenuated to the LNA 393 and undesired signal components (e.g.,blockers, images, etc.) are attenuated. To achieve such a filter, thecomplex baseband filter 442 provides a low-Q baseband filter that canhave its bandpass region offset from zero frequency. Note that theproperties (e.g., bandwidth, attenuation rate, quality factor, frequencyoffset, etc.) of the complex baseband filter 442 may be adjusted viacontrol signal from the SOC processing resources.

The frequency offset low-Q baseband filter is frequency translated tothe desired RF frequency to produce a frequency offset high-Q RF filtervia the clock signals provided by a clock generator 444. FIG. 39illustrates the frequency translation of the frequency offset low-Qbaseband filter to the frequency offset high-Q RF filter and FIG. 38illustrates an embodiment of the clock generator 444.

As shown in FIG. 38, the clock generator 444 (of which, variousembodiments will be discussed with reference to one or more of thesubsequent figures) produces four clocks signals each having a 25% dutycycle and sequentially offset by 90°. The clock signals have a frequencycorresponding to the carrier frequency of the inbound RF signal and canbe adjusted to better track the carrier frequency. The clock generator444 may also generate local oscillation clock signals (not shown), whichare used to down-convert the inbound RF signal to an inbound IF signal.Alternatively, one or more of the clock signals for the FTBPF 440 may beused for the LO clock signals.

Returning to the discussion of FIG. 37, the FTBPF 440 receives the clocksignals 442, which are coupled to the transistors to sequentially couplethe complex baseband filter to the inbound RF signal. With the clockrate being at RF (e.g., the carrier frequency(ies) of the desiredcomponent of the inbound RF signal), the response of the complexbaseband filter 442 is shifted to RF (and/or to LO) creating the high-QRF bandpass filter.

FIG. 40 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF 440 (frequencytranslated bandpass filter). The portion of the RX RF to IF sectionincludes the transformer T1, the variable capacitor network C1, and theLNA 393. The differential FTBPF 440 includes a plurality of transistorsand a complex baseband filter 442. The complex baseband filter 442includes a plurality of baseband impedances (e.g., Z_(BB)(s)) 450-456,positive gain stage (Gm) 458, and a negative gain stage (−GM) 460.

In an example of operation, the front-end module 390 (FEM) receives aninbound RF signal via an antenna, processes the signal as previouslydiscussed and/or as will be discussed with reference to one or more ofthe subsequent figures, and provides the FEM 390 processed inbound RFsignal to the transformer T1. The transformer T1 converts thesingle-ended inbound RF signal into a differential inbound RF signal.

The differential FTBPF 440 provides a high-Q (quality factor) RF filterthat filters the differential inbound RF signal such that desired signalcomponents of the inbound RF signal are passed substantiallyunattenuated to the LNA 393 and undesired signal components (e.g.,blockers, images, etc.) are attenuated. To achieve such a filter, thecomplex baseband filter 442 provides a low-Q baseband filter that canhave its bandpass region offset from zero frequency based a ratiobetween the gain stages and the baseband impedances. Note that each ofthe baseband impedances may be a capacitor, a switched capacitor filter,a switch capacitor resistance, and/or a complex impedance. Further notethat the impedance of each of the baseband impedances may be the same,different, or combination thereof. Still further note that theimpedances of each of baseband impedances may be adjusted and/or thegain of one or more of the gain stages may be adjusted via controlsignals from the SOC processing resources to adjust the properties ofthe low-Q baseband filter (e.g., bandwidth, attenuation rate, qualityfactor, etc.).

The frequency offset low-Q baseband filter is frequency translated tothe desired RF frequency to produce a frequency offset high-Q RF filtervia the clock signals provided by a clock generator 444. FIG. 42illustrates the frequency offset high-Q RF filter and FIG. 41illustrates an embodiment of the clock generator 444.

As shown in FIG. 41, the clock generator 444 (of which, variousembodiments will be discussed with reference to one or more of thesubsequent figures) produces four clocks signals each having a 25% dutycycle and sequentially offset by 90°. The clock signals have a frequencycorresponding to the carrier frequency of the inbound RF signal and canbe adjusted to better track the carrier frequency. The clock generator444 may also generate local oscillation clock signals (not shown), whichare used to down-convert the inbound RF signal to an inbound IF signal.Alternatively, one or more of the clock signals for the FTBPF 440 may beused for the LO clock signals.

Returning to the discussion of FIG. 40, the FTBPF 440 receives the clocksignals, which are coupled to the transistors to sequentially couple thecomplex baseband filter 442 to the inbound RF signal. With the clockrate being at RF (e.g., the carrier frequency(ies) of the desiredcomponent of the inbound RF signal), the response of the complexbaseband filter 442 is shifted to RF (and/or to LO) creating the high-QRF bandpass filter.

FIG. 43 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF 440 (frequencytranslated bandpass filter). The portion of the RX RF to IF sectionincludes the transformer T1, the variable capacitor network C1, and theLNA 393. The differential FTBPF 440 includes a plurality of transistorsand a complex baseband filter 442. The complex baseband filter 442includes a plurality of capacitors, positive gain stage (Gm) 458, and anegative gain stage (−Gm) 460.

In an example of operation, the front-end module 390 (FEM) receives aninbound RF signal via an antenna, processes the signal as previouslydiscussed and/or as will be discussed with reference to one or more ofthe subsequent figures, and provides the FEM 390 processed inbound RFsignal to the transformer T1. The transformer T1 converts thesingle-ended inbound RF signal into a differential inbound RF signal.

The differential FTBPF 440 provides a high-Q (quality factor) RF filterthat filters the differential inbound RF signal such that desired signalcomponents of the inbound RF signal are passed substantiallyunattenuated to the LNA 393 and undesired signal components (e.g.,blockers, images, etc.) are attenuated. To achieve such a filter, thecomplex baseband filter 442 provides a low-Q baseband filter that canhave its bandpass region offset from zero frequency based a ratiobetween the gain stages and the capacitors. Note that the capacitance ofeach of the capacitors may be the same, different, or combinationthereof. Further note that the capacitance of each of capacitors may beadjusted and/or the gain of one or more of the gain stages may beadjusted via control signals from the SOC processing resources to adjustthe properties of the low-Q baseband filter (e.g., bandwidth,attenuation rate, quality factor, etc.).

The frequency offset low-Q baseband filter is frequency translated tothe desired RF frequency to produce a frequency offset high-Q RF filtervia the clock signals provided by a clock generator 444. The clockgenerator 444 as shown in FIG. 44 (of which, various embodiments will bediscussed with reference to one or more of the subsequent figures)produces four clocks signals each having a 25% duty cycle andsequentially offset by 90°. The clock signals have a frequencycorresponding to the carrier frequency of the inbound RF signal and canbe adjusted to better track the carrier frequency. The clock generator444 may also generate local oscillation clock signals (not shown), whichare used to down-convert the inbound RF signal to an inbound IF signal.Alternatively, one or more of the clock signals for the FTBPF 440 may beused for the LO clock signals.

Returning to the discussion of FIG. 43, the FTBPF 440 receives the clocksignals, which are coupled to the transistors to sequentially couple thecomplex baseband filter 442 to the inbound RF signal. With the clockrate being at RF (e.g., the carrier frequency(ies) of the desiredcomponent of the inbound RF signal), the response of the complexbaseband filter 442 is shifted to RF (and/or to LO) creating the high-QRF bandpass filter.

FIG. 45 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an FTBPF 440 (frequencytranslated bandpass filter). The portion of the RX RF to IF sectionincludes the transformer T1, the variable capacitor network C1, acontrol module 470, and the LNA 393. The differential FTBPF 440 includesa plurality of transistors and a complex baseband filter 442. Thecomplex baseband filter 442 includes a plurality of baseband impedances(e.g., Z_(BB)(s)) 450-456, positive gain stage (Gm) 458, and a negativegain stage (−Gm) 460.

In an example of operation, the front-end module 390 (FEM) receives aninbound RF signal via an antenna, processes the signal as previouslydiscussed and/or as will be discussed with reference to one or more ofthe subsequent figures, and provides the FEM 390 processed inbound RFsignal to the transformer T1. The transformer T1 converts thesingle-ended inbound RF signal into a differential inbound RF signal.

The differential FTBPF 440 provides a high-Q (quality factor) RF filterthat filters the differential inbound RF signal such that desired signalcomponents of the inbound RF signal are passed substantiallyunattenuated to the LNA 393 and undesired signal components (e.g.,blockers, images, etc.) are attenuated. To achieve such a filter, thecomplex baseband filter 442 provides a low-Q baseband filter that canhave its bandpass region offset from zero frequency based a ratiobetween the gain stages and the baseband impedances as set by controlsignals provided by the control module 470.

The control module 470, which may be part of the SOC processingresources, determines a desired response (e.g., gain, bandwidth, qualityfactor, frequency offset, etc.) for the low-Q bandpass filter based onone or more of signal to noise ratio (SNR) of in the inbound RF signal,signal-to-interference ratio (SIR) of the inbound RF signal, receivedsignal strength, bit error rate, etc. From the desired response, thecontrol module 470 determines settings for the baseband impedancesand/or for the gain modules. Note that the control module 470 maycontinually update the desired response based on changes in the variousfactors it monitors, do the updates periodically, and/or when aperformance characteristic criterion is met (e.g., transmission powerlevel changed, SNR drops below a threshold, SIR drops below a threshold,received signal strength decreases below a threshold, etc.).

Once the frequency response of the low-Q baseband filter is determined(or updated), it is frequency translated to the desired RF frequency toproduce a frequency offset high-Q RF filter via the clock signalsprovided by a clock generator 476. The clock generator 476 as shown inFIG. 46 (of which, various embodiments will be discussed with referenceto one or more of the subsequent figures) produces four clocks signalseach having a 25% duty cycle and sequentially offset by 90°. The clocksignals have a frequency corresponding to the carrier frequency of theinbound RF signal and can be adjusted to better track the carrierfrequency. The clock generator 476 may also generate local oscillationclock signals (not shown), which are used to down-convert the inbound RFsignal to an inbound IF signal. Alternatively, one or more of the clocksignals for the FTBPF 440 may be used for the LO clock signals.

Returning to the discussion of FIG. 45, the FTBPF 440 receives the clocksignals, which are coupled to the transistors to sequentially couple thecomplex baseband filter 442 to the inbound RF signal. With the clockrate being at RF (e.g., the carrier frequency(ies) of the desiredcomponent of the inbound RF signal), the response of the complexbaseband filter 442 is shifted to RF (and/or to LO) creating the high-QRF bandpass filter.

FIG. 47 is a schematic block diagram of an embodiment of a complexbaseband (BB) filter 442 that includes a plurality of adjustablebaseband impedances 480-486, an adjustable positive gain stage 488, andan adjustable negative gain stage 490. Each of the adjustable basebandimpedances may include one or more of a selectable capacitor network 492(e.g., tunable capacitor), a programmable switched capacitor network494, a programmable switched capacitor filter 496 (1^(st) to n^(th)order), and any combination of components (e.g., inductors, capacitors,resistors) that provide a desired baseband frequency response.

The adjustable gain stages (+Gm and −Gm) 488-490 may each include anamplifier with a gain network coupled thereto. The gain network mayinclude one or more of a resistor, a capacitor, a variable resistor, avariable capacitor, etc. In this regard, the gain of each of the gainstages may be adjusted to change the properties of the complex basebandfilter 442. In particular, changing the gain with respect to theimpedance of the adjustable impedances, the frequency offset of thelow-Q bandpass filter can be changed. In addition, or in thealternative, the bandwidth, gain, slew rate, quality factor, and/orother properties of the complex baseband filter 442 can be changed viathe control signals provided by the control module 470.

FIG. 48 is a diagram of an example of converting the frequency responseof the complex BB filter 442 into the frequency response for a high-Q RFfilter for an RX RF to IF section that includes an FTBPF 440 with theadjustable complex baseband filter 442 of FIG. 47. In this diagram, thelow-Q baseband filter provided by the complex baseband filter 442 mayhave its bandwidth adjusted, its slew rate adjusted, it gain adjusted,its frequency offset adjusted, and/or other properties adjusted. Theadjustable and adjusted aspects of the low-Q bandpass filter aretranslated to RF (or LO). In this regard, by adjusting properties of thelow-Q baseband filter, the properties of the corresponding high-Qbaseband filter are similarly adjusted.

FIG. 49 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes a FTBPF 412 (frequencytranslated bandpass filter) module. The portion of the RX RF to IFsection includes the I 504 and Q RF to IF mixers 500, and the mixerbuffers 502. The FTBPF module includes an FTBPF and additional buffers.The FTBPF includes a plurality of transistors and a plurality ofbaseband impedances (e.g., Z_(BB)(s)) 414, 416, 418, and 420.

In an example of operation, the I mixer 504 mixes the I component of theinbound RF signal with an I component of the local oscillation (e.g.,f_(LO2)=f_(RF)−f_(IF) 500) to produce an I mixed signal. The I mixerbuffer buffers the I mixed signal and provides the buffered I mixedsignal to the FTBPF module 412. Similarly, the Q mixer mixes the Qcomponent of the inbound RF signal with a Q component of the localoscillation (e.g., f_(LO2)=f_(RF)−f_(IF)) to produce a Q mixed signal.The Q mixer buffer buffers the I mixed signal and provides the bufferedI mixed signal to the FTBPF module 412.

The FTBPF 412 provides a high-Q (quality factor) IF filter that filtersthe inbound IF signal (e.g., the I and Q mixed signals) such thatdesired signal components of the inbound IF signal are passedsubstantially unattenuated and undesired signal components (e.g.,blockers, images, etc.) are attenuated. To achieve such a filter, thebaseband impedances ((Z_(BB)(s))414, 416, 418, and 420 collectivelyprovide a low-Q baseband filter having a baseband filter response, whereeach of the baseband impedances may be a capacitor, a switched capacitorfilter, a switch capacitor resistance, and/or a complex impedance. Notethat the impedance of each of the baseband impedances may be the same,different, or combination thereof. Further note that the impedances ofeach of baseband impedances may be adjusted via control signal from theSOC processing resources to adjust the properties of the low-Q basebandfilter (e.g., bandwidth, attenuation rate, quality factor, etc.).

The frequency offset low-Q baseband filter is frequency translated tothe desired IF frequency to produce a frequency offset high-Q IF filtervia the clock signals provided by a clock generator 510. FIG. 51illustrates the frequency translation of the frequency offset low-Qbaseband filter to the frequency offset high-Q IF filter and FIG. 50illustrates an embodiment of the clock generator 510.

As shown in FIG. 50, the clock generator 510 (of which, variousembodiments will be discussed with reference to one or more of thesubsequent figures) produces four clocks signals each having a 25% dutycycle and sequentially phase offset by 90°. The clock signals have afrequency corresponding to the carrier frequency of the inbound IFsignal and can be adjusted to better track the carrier frequency. Theclock generator 510 may also generate local oscillation clock signals(not shown), which are used to down-convert the inbound RF signal to aninbound IF signal (e.g., LO2). Alternatively, one or more of the clocksignals for the FTBPF 412 may be used for the LO clock signals.

Returning to the discussion of FIG. 49, the FTBPF 412 receives the clocksignals, which are coupled to the transistors to sequentially couple thebaseband impedances to the inbound IF signal. With the clock rate beingat IF (e.g., the carrier frequency(ies) of the desired component of theinbound IF signal), the response of the complex baseband filter isshifted to IF (and/or to LO2) creating the high-Q IF bandpass filter.

FIG. 52 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes an IF FTBPF (frequencytranslated bandpass filter) module 530. The portion of the RX RF to IFsection includes the I and Q RF to IF mixers, and the mixer buffers. TheIF FTBPF 530 module includes a differential IF FTBPF 530 and additionalbuffers. The differential IF FTBPF 530 includes a plurality oftransistors and a plurality of baseband impedances (e.g., Z_(BB)(s)).

In an example of operation, the I mixer 522 mixes the I component of theinbound RF signal with an I component of the local oscillation (e.g.,f_(LO2)=f_(RF)−f_(IF) 520) to produce an I mixed signal. The I mixerbuffer 522 buffers the I mixed signal and provides the buffered I mixedsignal to the FTBPF 530 module. Similarly, the Q mixer 523 mixes the Qcomponent of the inbound RF signal with a Q component of the localoscillation (e.g., f_(LO2)=f_(RF)−f_(IF) 521) to produce a Q mixedsignal. The Q mixer buffer 523 buffers the I mixed signal and providesthe buffered I mixed signal to the FTBPF 530 module.

The FTBPF 530 provides a high-Q (quality factor) IF filter that filtersthe inbound IF signal (e.g., the I and Q mixed signals) such thatdesired signal components of the inbound IF signal are passedsubstantially unattenuated and undesired signal components (e.g.,blockers, images, etc.) are attenuated. To achieve such a filter, thebaseband impedances ((Z_(BB)(s)) 532,534,536,538,540,542,544, and 546collectively provide a low-Q baseband filter, where each of the basebandimpedances may be a capacitor, a switched capacitor filter, a switchcapacitor resistance, and/or a complex impedance. Note that theimpedance of each of the baseband impedances may be the same, different,or combination thereof. Further note that the impedances of each ofbaseband impedances may be adjusted via control signal from the SOCprocessing resources to adjust the properties of the low-Q basebandfilter (e.g., bandwidth, attenuation rate, quality factor, etc.).

The frequency offset low-Q baseband filter is frequency translated tothe desired IF frequency to produce a frequency offset high-Q IF filtervia the clock signals provided by a clock generator. The clock generator550 as shown in FIG. 53 (of which, various embodiments will be discussedwith reference to one or more of the subsequent figures) produces eightclocks signals each having a 12.5% duty cycle and sequentially phaseoffset by 45°. The clock signals have a frequency corresponding to thecarrier frequency of the inbound IF signal and can be adjusted to bettertrack the carrier frequency. The clock generator 550 may also generatelocal oscillation clock signals (not shown), which are used todown-convert the inbound RF signal to an inbound IF signal (e.g., LO2).Alternatively, one or more of the clock signals for the FTBPF may beused for the LO clock signals.

Returning to the discussion of FIG. 52, the FTBPF 530 receives the clocksignals, which are coupled to the transistors to sequentially couple thebaseband impedances to the inbound IF signal. With the clock rate beingat IF (e.g., the carrier frequency(ies) of the desired component of theinbound IF signal), the response of the complex baseband filter isshifted to IF (and/or to LO2) creating the high-Q IF bandpass filter.

FIG. 54 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes a single-ended FTBPF 560(frequency translated bandpass filter) that includes a negativeresistance. The portion of the RX RF to IF section includes thetransformer, the variable capacitor network, and the LNA. The FTBPF 560includes a plurality of transistors and a plurality of basebandimpedances (Z_(BB)(s)) 562,564,566, and 568.

In an example of operation, the front-end module (FEM) 390 receives aninbound RF signal via an antenna, processes the signal as previouslydiscussed and/or as will be discussed with reference to one or more ofthe subsequent figures, and provides the FEM 390 processed inbound RFsignal to the transformer. The transformer steps up or steps down thevoltage level of the inbound RF signal, which is subsequently filteredby the variable capacitor network. Note that the transformer may beomitted if an adjustment of the voltage level of the inbound RF signalis not needed and/or the isolation provided by the transformer is notneeded.

The FTBPF 560 provides a high-Q (quality factor) RF filter that filtersthe inbound RF signal such that desired signal components of the inboundRF signal are passed substantially unattenuated to the LNA 392 andundesired signal components (e.g., blockers, images, etc.) areattenuated. To achieve such a filter, the baseband impedances((Z_(BB)(s)) 562,564,566, and 568 collectively provide a low-Q basebandfilter, where each of the baseband impedances may be a capacitor, aswitched capacitor filter, a switch capacitor resistance, and/or acomplex impedance. Note that the impedance of each of the basebandimpedances may be the same, different, or combination thereof. Furthernote that the impedances of each of baseband impedances may be adjustedvia control signal from the SOC processing resources to adjust theproperties of the low-Q baseband filter (e.g., bandwidth, attenuationrate, quality factor, etc.).

In addition, the FTBPF 560 includes negative resistance (e.g., −2R) tocompensate for inductance loss, to compensate for switch loss, and/or toimprove the selectivity and/or quality factor of the low-Q bandpassfilter. The negative impedance may be implemented as shown in FIG. 56 toinclude a plurality of transistors.

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce the high-Q RF filter via the clock signals providedby a clock generator. The clock generator as shown in FIG. 55 (of which,various embodiments will be discussed with reference to one or more ofthe subsequent figures) produces four clocks signals each having a 25%duty cycle and sequentially offset by 90°. The clock signals have afrequency corresponding to the carrier frequency of the inbound RFsignal and can be adjusted to better track the carrier frequency. Theclock generator 572 may also generate local oscillation clock signals(not shown), which are used to down-convert the inbound RF signal to aninbound IF signal.

Returning to the discussion of FIG. 54, the FTBPF 560 receives the clocksignals, which are coupled to the transistors to sequentially coupletheir respective baseband impedances to the inbound RF signal. With theclock rate being at RF (e.g., the carrier frequency(ies) of the desiredcomponent of the inbound RF signal), the baseband impedance affects(e.g., collectively the low-Q bandpass filter) is shifted to RF creatingthe high-Q RF bandpass filter.

FIG. 57 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes a differential FTBPF 580(frequency translated bandpass filter) that includes a negativeresistance. The portion of the RX RF to IF section includes thetransformer, the variable capacitor network, and the LNA 393. Thedifferential FTBPF 580 includes a plurality of transistors and aplurality of baseband impedances (Z_(BB)(s)).

In an example of operation, the front-end module (FEM) 390 receives aninbound RF signal via an antenna, processes the signal as previouslydiscussed and/or as will be discussed with reference to one or more ofthe subsequent figures, and provides the FEM processed inbound RF signalto the transformer. The transformer steps up or steps down the voltagelevel of the inbound RF signal, which is subsequently filtered by thevariable capacitor network. Note that the transformer may be omitted ifan adjustment of the voltage level of the inbound RF signal is notneeded and/or the isolation provided by the transformer is not needed.

The FTBPF 580 provides a high-Q (quality factor) RF filter that filtersthe inbound RF signal such that desired signal components of the inboundRF signal are passed substantially unattenuated to the LNA 393 andundesired signal components (e.g., blockers, images, etc.) areattenuated. To achieve such a filter, the baseband impedances((Z_(BB)(s)) collectively provide a low-Q baseband filter, where each ofthe baseband impedances may be a capacitor, a switched capacitor filter,a switch capacitor resistance, and/or a complex impedance. Note that theimpedance of each of the baseband impedances may be the same, different,or combination thereof. Further note that the impedances of each ofbaseband impedances may be adjusted via control signal from the SOCprocessing resources to adjust the properties of the low-Q basebandfilter (e.g., bandwidth, attenuation rate, quality factor, etc.).

In addition, the FTBPF 580 includes negative resistance (e.g., −2R) tocompensate for inductance loss, to compensate for switch loss, and/or toimprove the selectivity and/or quality factor of the low-Q bandpassfilter. The negative impedance may be implemented as shown in FIG. 56.

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce the high-Q RF filter via the clock signals providedby a clock generator 582. The clock generator 582 as shown in FIG. 58(of which, various embodiments will be discussed with reference to oneor more of the subsequent figures) produces four clocks signals eachhaving a 25% duty cycle and sequentially offset by 90°. The clocksignals have a frequency corresponding to the carrier frequency of theinbound RF signal and can be adjusted to better track the carrierfrequency. The clock generator 582 may also generate local oscillationclock signals (not shown), which are used to down-convert the inbound RFsignal to an inbound IF signal.

Returning to the discussion of FIG. 57, the FTBPF 580 receives the clocksignals, which are coupled to the transistors to sequentially coupletheir respective baseband impedances to the inbound RF signal. With theclock rate being at RF (e.g., the carrier frequency(ies) of the desiredcomponent of the inbound RF signal), the baseband impedance affects(e.g., collectively the low-Q bandpass filter) is shifted to RF creatingthe high-Q RF bandpass filter.

FIG. 59 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes a dual band FTBPF(frequency translated bandpass filter) 590. The portion of the RX RF toIF section includes the transformer, the variable capacitor network, andthe LNA 392-1, and 392-2. The FTBPF 590 includes a plurality oftransistors and a plurality of baseband impedances (Z_(BB)(s)) 592, 594,596, and 598.

In an example of operation, the front-end module (FEM) 396 receives adual band inbound RF signal (e.g., f_(RF1) and f_(RF2)) via an antenna,processes the signal as previously discussed and/or as will be discussedwith reference to one or more of the subsequent figures, and providesthe FEM processed inbound RF signal to the transformer. The transformersteps up or steps down the voltage level of the inbound RF signal, whichis subsequently filtered by the variable capacitor network C1. Note thatthe transformer may be omitted if an adjustment of the voltage level ofthe inbound RF signal is not needed and/or the isolation provided by thetransformer is not needed.

The FTBPF 590 provides two high-Q (quality factor) RF filters (onecentered at f_(RF1) and the other centered at f_(RF2)) that filters theinbound RF signal such that desired signal components of the dual bandinbound RF signal are passed substantially unattenuated to the LNA392-1, and 392-2 and undesired signal components (e.g., blockers,images, etc.) are attenuated. The two high-Q RF filters are produced bya plurality of baseband impedances ((Z_(BB)(s))592, 594, 596, and 598and a plurality of transistors, where each of the baseband impedancesincludes a second plurality of baseband impedances (e.g.,Z′_(BB)(s))592, 594, 596, and 598 and a second plurality of transistors.The second plurality of baseband impedances (Z′_(BB)(s)) 592, 594, 596,and 598 provide a low-Q baseband filter, where each of the secondplurality of baseband impedances may be a capacitor, a switchedcapacitor filter, a switch capacitor resistance, and/or a compleximpedance. Note that the impedance of each of the baseband impedancesmay be the same, different, or combination thereof. Further note thatthe impedances of each of baseband impedances may be adjusted viacontrol signal from the SOC processing resources to adjust theproperties of the low-Q baseband filter (e.g., bandwidth, attenuationrate, quality factor, etc.).

The low-Q baseband filter is frequency translated to a desired RFfrequency (e.g., fD=(fLO1−f_(LO2))/2) to produce the high-Q RF filtervia the clock signals (at f_(D)) provided by a clock generator 600. Theclock generator 600 as shown in FIG. 60 (of which, various embodimentswill be discussed with reference to one or more of the subsequentfigures) produces four clocks signals (e.g., LO′₁ through L0′₄) eachhaving a 25% duty cycle and sequentially offset by 90°. The clocksignals have a frequency corresponding to ½ the difference of thecarrier frequency of the first frequency band of the inbound RF signal(e.g., f_(RF1) or f_(LO1)) minus the carrier frequency of the secondfrequency band of the inbound RF signal (e.g., f_(RF2) or f_(LO2)) andcan be adjusted to better track one or both of the carrier frequencies.

The high-Q RF filter produced by the first plurality of basebandimpedances is frequency translated to higher desired RF frequencies asthe first plurality of transistors are clocked by LO₁-LO₄ (as producedby the clock generator 600 of FIG. 60) at a rate of f_(C), whereinf_(C)=(fLO1+f_(LO2))/2. For example with reference to FIG. 61, the low-Qbaseband filter produced by the second plurality of baseband impedancesis frequency translated to +/−f_(D). As such, the response of the firsthigh-Q bandpass filter is centered at +/−f_(D), with third orderharmonics are also shown. With reference to FIG. 62, the first high-Qbandpass filter is frequency translated to f_(C)−f_(D) and tof_(C)+f_(D) to produce two high-Q bandpass filters. Sincef_(C)=(fLO1+f_(LO2))/2 and f_(D)=(fLO1−f_(LO2))/2, f_(C)−f_(D)=LO2 andf_(C)−f_(D)=LO1. Thus, one of the high-Q bandpass filters is centered(or off-centered from) LO2 (or f_(RF2)) and the other high-Q bandpassfilter is centered (or off-centered from) LO1 (or f_(RF1)). As such, thefirst high-Q bandpass filter passes the desired signal components of theinbound RF signal at LO2 (or f_(RF2)) and the second high-Q bandpassfilter passes the desired signal components of the inbound RF signal atLO1 (or f_(RF1)).

FIG. 63 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes a dual band differentialFTBPF (frequency translated bandpass filter) 610. The portion of the RXRF to IF section includes the transformer, the variable capacitornetwork, and the LNA 393-1, 393-2. The FTBPF 610 includes a plurality oftransistors and a plurality of baseband impedances (Z_(BB)(s))612,614,616, and 618.

In an example of operation, the front-end module (FEM) 390 receives adual band inbound RF signal (e.g., f_(RF1) and f_(RF2)) via an antenna,processes the signal as previously discussed and/or as will be discussedwith reference to one or more of the subsequent figures, and providesthe FEM processed inbound RF signal to the transformer T1. Thetransformer converts the inbound RF signal into a differential inboundRF signal.

The FTBPF 610 provides two high-Q (quality factor) RF filters (onecentered at f_(RF1) and the other centered at f_(RF2)) that filters theinbound RF signal such that desired signal components of the dual bandinbound RF signal are passed substantially unattenuated to the LNA393-1, 393-2 and undesired signal components (e.g., blockers, images,etc.) are attenuated. The two high-Q RF filters are produce by aplurality of baseband impedances ((Z_(BB)(s)) 612,614,616, and 618 and aplurality of transistors, where each of the baseband impedances includesa second plurality of baseband impedances (e.g., Z′_(BB)(s))612,614,616, and 618 and a second plurality of transistors. The secondplurality of baseband impedances (Z′_(BB)(s)) 612,614,616, and 618provide a low-Q baseband filter, where each of the second plurality ofbaseband impedances may be a capacitor, a switched capacitor filter, aswitch capacitor resistance, and/or a complex impedance. Note that theimpedance of each of the baseband impedances may be the same, different,or combination thereof. Further note that the impedances of each ofbaseband impedances may be adjusted via control signal from the SOCprocessing resources to adjust the properties of the low-Q basebandfilter (e.g., bandwidth, attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to a desired RFfrequency (e.g., fD=(fLO1−f_(LO2))/2) to produce the high-Q RF filtervia the clock signals (at f_(D)) provided by a clock generator 600. Theclock generator 600 as shown in FIG. 60 (of which, various embodimentswill be discussed with reference to one or more of the subsequentfigures) produces four clocks signals (e.g., LO′₁ through L0′₄) eachhaving a 25% duty cycle and sequentially offset by 90°. The clocksignals have a frequency corresponding to ½ the difference of thecarrier frequency of the first frequency band of the inbound RF signal(e.g., f_(RF1) or f_(LO1)) minus the carrier frequency of the secondfrequency band of the inbound RF signal (e.g., f_(RF2) or f_(LO2)) andcan be adjusted to better track one or both of the carrier frequencies.

The high-Q RF filter produced by the first plurality of basebandimpedances is frequency translated to higher desired RF frequencies asthe first plurality of transistors are clocked by LO₁-LO₄ (as producedby the clock generator of FIG. 60) at a rate of f_(C), whereinf_(C)=(fLO1+f_(LO2))/2. Thus, one of the high-Q bandpass filters iscentered (or off-centered from) LO2 (or f_(RF2)) and the other high-Qbandpass filter is centered (or off-centered from) LO1 (or f_(RF1)). Assuch, the first high-Q bandpass filter passes the desired signalcomponents of the inbound RF signal at LO2 (or f_(RF2)) and the secondhigh-Q bandpass filter passes the desired signal components of theinbound RF signal at LO1 (or f_(RF1)).

FIG. 64 is a schematic block diagram of another embodiment of a portionof an RF to IF receiver section that includes a transformer, a variablecapacitor network, a pair of inverter based LNAS 395, a mixer, andoutput buffers (or unity gain drivers). The mixer includes a pluralityof transistors, a pair of transimpedance amplifiers (TIA) 622, and 624,and accompanying impedances (Z) 626, and 628.

In an example of operation, the LNAs 395 provide a differential current(i_(RF) and −i_(RF)) to the mixer. Operating in the current domain, themixer mixes the differential current with the differential I 630component of the local oscillation (LO_(IP) and LO_(IN)) to produce an Imixed current signal. The mixer also mixes the different current withthe differential Q 632 component of the local oscillation LO_(QP) andLO_(QN)) to produce a Q mixed current signal.

The first TIA 622, and 624 amplifies the I mixed current signal and, viathe associated impedance (Z) 626, and 628, produces a voltage domain Imixed signal. Similarly, the second TIA amplifies the Q mixed currentsignal and, via the associated impedance (Z) 626, and 628, produces avoltage domain Q mixed signal.

FIG. 65 is a schematic block diagram of another embodiment of a clockgenerator 634 for the RF to IF receiver section. The clock generator (ofwhich, various embodiments will be discussed with reference to one ormore of the subsequent figures) produces four clocks signals (e.g.,LO_(IP); LO_(IN); LO_(IP); and LO_(IN)) each having a 25% duty cycle andsequentially offset by 90° as shown.

FIG. 66 is a schematic block diagram of an embodiment of atransimpedance amplifier (TIA) and the corresponding impedance (Z) 640,and 642. The TIA includes current sources, frequency dependentamplifiers (−A(s)), IF transistors (T_(IF)), and low frequencytransistors (T_(LF)). The corresponding impedance includes, in eachoutput leg of the TIA, a resistor, a capacitor, and a transistor.

In an example of operation, the differential input current is receivedat in− and in+. A current node analysis (e.g., KCL—Kirchoff's currentlaw) at the negative input node reveals that the current source current(ib) equals the input current (i_(IN))+the current through the capacitor(i_(C))+the current through T_(IF) (i_(OUT))+the current through T_(LF).A KVL (Kirchoff's voltage law) at the positive output (out+) revealsthat the output voltage (Vout+) equals Vdd−Z*I_(OUT) (i.e., the currentthrough T_(IF)).

At high frequencies (e.g., above r_(RF) of the inbound RF signal), theimpedance of the capacitor becomes dominant such that the inputs areessentially shorted together; thus the output current (i_(OUT)) containsessentially no high frequency components. At low frequencies (e.g.,below r_(RF) of the inbound RF signal), the amplifier and low frequencytransistor are configured with respect to T_(IF) that T_(IF), which isessentially an open circuit for low frequency currents. This may beachieved by sizing the transistors and biasing the amplifier such thatT_(LF) at low frequencies has a much smaller impedance than Z+T_(IF).

For frequencies in the desired frequency range (e.g., f_(RF)), thecapacitor and T_(LF) have high impedances compared to the impedance ofT_(IF) and the corresponding impedance Z 640, 642. As such,i_(OUT)=i_(b)−i_(IN) and v_(OUT)=Z*i_(OUT). Accordingly, the TIA andcorresponding Z 640, 642 can be tuned to provide a high-Q RF bandpassfilter. Note that one or more of the components of the TIA may beadjustable via control signals provided by the SOC processing resourcesto adjust the properties of the high-Q RF bandpass filter.

FIG. 67 is a schematic block diagram of an embodiment of a low noiseamplifier (LNA) 670 that includes an FTBPF 650,672, 674, AND 678. TheLNA 670 includes a current source, a pair of input transistors (T3 &T4), a pair of biasing transistors (T1 & T2), and output impedances(resistors shown, but could be inductors, transistors, capacitors,and/or combination thereof. Note that the current source may be replacedwith a passive device (e.g., resistor, inductor, capacitor, and/or acombination thereof) or may be omitted. The FTBPF 650,672, 674, AND 678may be positioned within the LNA 670 at one or various locations asshown.

FIG. 68 is a schematic block diagram of an embodiment of a differential4-phase FTBPF (frequency translated bandpass filter) 680 that includes aplurality of transistors and four baseband impedances (e.g., Z_(BB)(s))682, 684, 686, and 688 The baseband impedances ((Z_(BB)(s)) 682, 684,686, and 688 collectively provide a low-Q baseband filter, where each ofthe baseband impedances may be a capacitor, a switched capacitor filter,a switch capacitor resistance, and/or a complex impedance. Note that theimpedance of each of the baseband impedances may be the same, different,or combination thereof. Further note that the impedances of each ofbaseband impedances may be adjusted via control signal from the SOCprocessing resources to adjust the properties of the low-Q basebandfilter (e.g., bandwidth, attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce a high-Q RF or IF filter via the clock signals(e.g., LO₁-LO₄) provided by a clock generator. The differential high-QRF filter filters a differential RF or IF signal such that desiredsignal components of the RF or IF signal are passed substantiallyunattenuated and undesired signal components (e.g., blockers, images,etc.) are attenuated.

FIG. 69 is a diagram of an example of a frequency response for a 4-phaseFTBPF 680 that illustrates signal feed-through harmonics and foldingsignal harmonics. The signal feed-through harmonics are at +/−3, +/−5,+/−7, and +/−9 692 and the folding signal harmonics are at −3, 5, −7,and −9 690.

FIG. 70 is a schematic block diagram of another embodiment of a 3-phaseFTBPF (frequency translated bandpass filter) 700 that includes aplurality of transistors and 3 baseband impedances (e.g., Z_(BB)(s))702, 704, and 706. The baseband impedances ((Z_(BB)(s)) 702, 704, and706 collectively provide a low-Q baseband filter, where each of thebaseband impedances may be a capacitor, a switched capacitor filter, aswitch capacitor resistance, and/or a complex impedance. Note that theimpedance of each of the baseband impedances may be the same, different,or combination thereof. Further note that the impedances of each ofbaseband impedances may be adjusted via control signal from the SOCprocessing resources to adjust the properties of the low-Q basebandfilter (e.g., bandwidth, attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce a high-Q RF or IF filter via the clock signals(e.g., LO₁-LO_(̂)) as shown in FIG. 71 and as provided by a clockgenerator. The differential high-Q RF filter filters a differential RFor IF signal such that desired signal components of the RF or IF signalare passed substantially unattenuated and undesired signal components(e.g., blockers, images, etc.) are attenuated.

FIG. 72 is a diagram of an example of a frequency response for a 3-phaseFTBPF 700 that illustrates signal feed-through harmonics and foldingsignal harmonics. The signal feed-through harmonics are at +/−5 and +/−7708 and the folding signal harmonics are at 5 and 7 710.

FIG. 73 is a schematic block diagram of another embodiment of a 4-phaseFTBPF (frequency translated bandpass filter) 712 that includes aplurality of transistors and four capacitors. The capacitorscollectively provide a low-Q baseband filter. Note that the capacitanceof each of the capacitors may be the same, different, or combinationthereof. Further note that the capacitances of each of capacitors may beadjusted via control signal from the SOC processing resources to adjustthe properties of the low-Q baseband filter (e.g., bandwidth,attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce a high-Q RF or IF filter via the clock signals(e.g., LO₁-LO₄) provided by a clock generator. The differential high-QRF filter filters a differential RF or IF signal such that desiredsignal components of the RF or IF signal are passed substantiallyunattenuated and undesired signal components (e.g., blockers, images,etc.) are attenuated.

FIG. 74 is a schematic block diagram of another embodiment of a 4-phaseFTBPF (frequency translated bandpass filter) 714 that includes aplurality of transistors and two baseband impedances (e.g., Z_(BB)(s))coupled to the transistors as shown. The baseband impedances((Z_(BB)(s)) collectively provide a low-Q baseband filter, where each ofthe baseband impedances may be a capacitor, a switched capacitor filter,a switch capacitor resistance, and/or a complex impedance. Note that theimpedance of each of the baseband impedances may be the same, different,or combination thereof. Further note that the impedances of each ofbaseband impedances may be adjusted via control signal from the SOCprocessing resources to adjust the properties of the low-Q basebandfilter (e.g., bandwidth, attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce a high-Q RF or IF filter via the clock signals(e.g., LO₁-LO₄) provided by a clock generator. The differential high-QRF filter filters a differential RF or IF signal such that desiredsignal components of the RF or IF signal are passed substantiallyunattenuated and undesired signal components (e.g., blockers, images,etc.) are attenuated.

FIG. 75 is a schematic block diagram of another embodiment of a 4-phaseFTBPF (frequency translated bandpass filter) 716 that includes aplurality of transistors and four baseband impedances (e.g., Z_(BB)(s)).The baseband impedances ((Z_(BB)(s)) collectively provide a low-Qbaseband filter, where each of the baseband impedances may be acapacitor, a switched capacitor filter, a switch capacitor resistance,and/or a complex impedance. Note that the impedance of each of thebaseband impedances may be the same, different, or combination thereof.Further note that the impedances of each of baseband impedances may beadjusted via control signal from the SOC processing resources to adjustthe properties of the low-Q baseband filter (e.g., bandwidth,attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce a high-Q RF or IF filter via the clock signals(e.g., LO₁-LO₄) provided by a clock generator. The differential high-QRF filter filters a differential RF or IF signal such that desiredsignal components of the RF or IF signal are passed substantiallyunattenuated and undesired signal components (e.g., blockers, images,etc.) are attenuated.

FIG. 76 is a schematic block diagram of another embodiment of a 4-phaseFTBPF (frequency translated bandpass filter) 720 that includes aplurality of transistors and a complex baseband impedance (e.g.,Z_(BB,C)(ω)) 722. The complex baseband impedance provides a low-Qbaseband filter that is offset from 0 by ωOC. Note that the complexbaseband impedance may be adjusted via control signal from the SOCprocessing resources to adjust the properties of the low-Q basebandfilter (e.g., bandwidth, attenuation rate, quality factor, frequencyoffset, etc.).

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce a high-Q RF or IF filter via the clock signals(e.g., LO₁-LO₄) provided by a clock generator. The differential high-QRF filter filters a differential RF or IF signal such that desiredsignal components of the RF or IF signal are passed substantiallyunattenuated and undesired signal components (e.g., blockers, images,etc.) are attenuated.

FIG. 77 is a schematic block diagram of an embodiment of a complexbaseband impedance for an FTBPF (frequency translated bandpass filter).The complex baseband impedance 726 includes a first baseband impedance(e.g., Z_(BB)(ω)), a negative gain stage (e.g., −jGm(ω)V_(IM)(ω)), asecond baseband impedance (e.g., Z_(BB)(ω)), and a positive gain stage(e.g., jGm(w)V_(RE)(ω)). As such, the complex baseband impedanceincludes a real component (RE) and an imaginary component (IM). Thecomplex baseband impedance provides a low-Q bandpass filter that has thefrequency response as shown, where the real component is represented bythe ω>0 curve and the negative component is represented by the ω<0curve.

FIG. 78 is a schematic block diagram of an embodiment of a 4-phase FTBPF(frequency translated bandpass filter) that includes the complexbaseband impedance with the baseband impedance implemented viacapacitors. The complex baseband impedance provides a low-Q basebandfilter 730 that is offset from 0 by ωOC, which is based on a ratiobetween the gain (Gm) and the impedance of the capacitors (C_(BB)). Notethat the complex baseband impedance may be adjusted via control signalfrom the SOC processing resources to adjust the properties of the low-Qbaseband filter (e.g., bandwidth, attenuation rate, quality factor,frequency offset, etc.). For instance, the capacitors and/or the gainmodules may be adjusted.

The frequency offset low-Q baseband filter is frequency translated tothe desired RF frequency to produce a high-Q RF or IF filter via theclock signals (e.g., LO₁-LO₄) provided by a clock generator. Thedifferential high-Q RF filter filters a differential RF or IF signalsuch that desired signal components of the RF or IF signal are passedsubstantially unattenuated and undesired signal components (e.g.,blockers, images, etc.) are attenuated.

FIG. 79 is a schematic block diagram of an embodiment of an m-phaseFTBPF (frequency translated bandpass filter) 732 that includes aplurality of transistors and m number of capacitors, where m=>2. Thecapacitors collectively provide a low-Q baseband filter. Note that thecapacitance of each of the capacitors may be the same, different, orcombination thereof. Further note that the capacitances of each ofcapacitors may be adjusted via control signal from the SOC processingresources to adjust the properties of the low-Q baseband filter (e.g.,bandwidth, attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce a high-Q RF or IF filter via the clock signals(e.g., LO₁-LO_(M)) provided by a clock generator. The differentialhigh-Q RF filter filters a differential RF or IF signal such thatdesired signal components of the RF or IF signal are passedsubstantially unattenuated and undesired signal components (e.g.,blockers, images, etc.) are attenuated.

FIG. 80 is a schematic block diagram of an embodiment of an m-phaseFTBPF (frequency translated bandpass filter) 734 that includes aplurality of transistors and m number of baseband impedances (e.g.,Z_(BB)(s)), where m is an integer multiple of 4 and is greater than 4.The baseband impedances ((Z_(BB)(s)) collectively provide a low-Qbaseband filter, where each of the baseband impedances may be acapacitor, a switched capacitor filter, a switch capacitor resistance,and/or a complex impedance. Note that the impedance of each of thebaseband impedances may be the same, different, or combination thereof.Further note that the impedances of each of baseband impedances may beadjusted via control signal from the SOC processing resources to adjustthe properties of the low-Q baseband filter (e.g., bandwidth,attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to the desired IFfrequency to produce a high-Q IF filter via the clock signals (e.g.,LO₁-LO_(M)) provided by a clock generator. The differential high-Q IFfilter filters a differential I signal component and a differential Qsignal component of the IF signal such that desired signal components ofthe IF signal are passed substantially unattenuated and undesired signalcomponents (e.g., blockers, images, etc.) are attenuated.

FIG. 81 is a schematic block diagram of an embodiment of an m-phaseFTBPF (frequency translated bandpass filter) 736 that includes aplurality of transistors and m/2 number of baseband impedances (e.g.,Z_(BB)(s)), where m>=4. The baseband impedances ((Z_(BB)(s))collectively provide a low-Q baseband filter, where each of the basebandimpedances may be a capacitor, a switched capacitor filter, a switchcapacitor resistance, and/or a complex impedance. Note that theimpedance of each of the baseband impedances may be the same, different,or combination thereof. Further note that the impedances of each ofbaseband impedances may be adjusted via control signal from the SOCprocessing resources to adjust the properties of the low-Q basebandfilter (e.g., bandwidth, attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce a high-Q RF or IF filter via the clock signals(e.g., LO₁-LO₄) provided by a clock generator. The differential high-QRF filter filters a differential RF or IF signal such that desiredsignal components of the RF or IF signal are passed substantiallyunattenuated and undesired signal components (e.g., blockers, images,etc.) are attenuated.

FIG. 82 is a schematic block diagram of an embodiment of an m-phaseFTBPF (frequency translated bandpass filter) 738 that includes aplurality of transistors and m number of baseband impedances (e.g.,Z_(BB)(s)), where m>=2. The baseband impedances ((Z_(BB)(s))collectively provide a low-Q baseband filter, where each of the basebandimpedances may be a capacitor, a switched capacitor filter, a switchcapacitor resistance, and/or a complex impedance. Note that theimpedance of each of the baseband impedances may be the same, different,or combination thereof. Further note that the impedances of each ofbaseband impedances may be adjusted via control signal from the SOCprocessing resources to adjust the properties of the low-Q basebandfilter (e.g., bandwidth, attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce a high-Q RF or IF filter via the clock signals(e.g., LO₁-LO₄) provided by a clock generator. The differential high-QRF filter filters a differential RF or IF signal such that desiredsignal components of the RF or IF signal are passed substantiallyunattenuated and undesired signal components (e.g., blockers, images,etc.) are attenuated.

FIG. 83 is a schematic block diagram of an embodiment of a single-endedm-phase FTBPF (frequency translated bandpass filter) 740 that includes aplurality of transistors and m number of baseband impedances (e.g.,Z_(BB)(s)), where m>=2. The baseband impedances ((Z_(BB)(s))collectively provide a low-Q baseband filter, where each of the basebandimpedances may be a capacitor, a switched capacitor filter, a switchcapacitor resistance, and/or a complex impedance. Note that theimpedance of each of the baseband impedances may be the same, different,or combination thereof. Further note that the impedances of each ofbaseband impedances may be adjusted via control signal from the SOCprocessing resources to adjust the properties of the low-Q basebandfilter (e.g., bandwidth, attenuation rate, quality factor, etc.).

The low-Q baseband filter is frequency translated to the desired RFfrequency to produce a high-Q RF or IF filter via the clock signals(e.g., LO₁-LO₄) provided by a clock generator. The differential high-QRF filter filters a differential RF or IF signal such that desiredsignal components of the RF or IF signal are passed substantiallyunattenuated and undesired signal components (e.g., blockers, images,etc.) are attenuated.

FIG. 84 is a diagram of an example of a frequency response for anm-phase FTBPF 740 that illustrates the low-Q bandpass filter beingfrequency translated to a higher frequency (e.g., f_(LO)). fLO maycorresponding to an RF frequency, an IF frequency, a local oscillation,or a combination thereof.

FIG. 85 is a schematic block diagram of an embodiment of a clockgenerator for an m-phase FTBPF 750. The clock generator includes aplurality of flip-flops (DFF) 752, 754, and 756 and a plurality of pulsenarrower 758, 760, and 762. The flip-flops 752, 754, and 756 are clockedby a clock signal (clk) and a clock-bar signal (clkb) at a rate ofm*f_(RF). The resulting clock pulses from each flip-flop 752, 754, and756 are pulse narrowed by the corresponding pulse narrower.

The pulse narrower 758, 760, and 762 includes two pairs of transistorscoupled as shown. The lower left transistor is smaller than the otherssuch that the rise time is slower than the fall time, thereby narrowingthe pulse.

FIG. 86 is a schematic block diagram of another embodiment of a clockgenerator for an m-phase FTBPF 770. The clock generator includes aplurality of flip-flops (DFF) 772,774, and 776 and a plurality of ANDgates. The flip-flops 772,774, and 776 are clocked by a clock signal(clk) and a clock-bar signal (clkb) at a rate of ½*m*f_(RF). The ANDgates receive a non-inverted output from a first flip-flop 772 and theinverted output of the next flip-flop 774 to insure that consecutiveclock pulses do not overlap.

FIG. 87 is a schematic block diagram of another embodiment of a clockgenerator for an m-phase FTBPF 790. The clock generator includes a ringoscillator 792 and a plurality of logic circuits. Each logic circuitincludes an AND gate and inverters or buffers. The ring oscillator 792is gated at a clock rate of m*f_(RF) (m is an odd number=to 3 orgreater). Each of the logic circuits receives consecutive pulses of thering oscillator 792 such that consecutive clock pulses do not overlap.

FIG. 88 is a schematic block diagram of an embodiment of a clockgenerator for a 3-phase FTBPF 800 that includes a ring oscillator 792and a plurality of logic circuits. Each of the logic circuits includesan AND gate and a combination of buffers and/or inverters. For instance,each of the logic circuits includes an AND gate, an inverter, and abuffer. The ring oscillator 792 is gated at a clock rate of 3*f_(RF).Via the logic circuits, the AND gates are skewed to produce the ⅓ dutycycle non-overlapping clocks (e.g., clk 1 802, clk 2 806, and clk 3804).

FIG. 89 is a schematic block diagram of another embodiment of a clockgenerator for a 3-phase FTBPF 810 that includes two ring oscillators 792and a plurality of logic gates. Each of the logic circuits includes anAND gate and a combination of buffers and/or inverters. For instance,each of the logic circuits includes an AND gate, an inverter, and abuffer. The first ring oscillator 792 is gated at a clock rate of3*f_(RF) and the second ring oscillator 792 is gated at the inversion of3*f_(RF) (e.g., −3*f_(RF)). In this configuration, clock signals 1-3812, 814 and 816 are as shown in FIG. 88 and clock signals 4-6 818, 820and 822 are the inversion of clocks 1-3, respectively.

FIG. 90 is a schematic block diagram of an embodiment of a portion ofeach of a front-end module (FEM) 810 and an SOC 812. The portion of theFEM 810 includes a power amplifier module (PA) 814, a duplexer, abalance network 818, and a common mode sensing circuit. The duplexerincludes a transformer (or other structure such as a frequency selectiveduplexer and/or an electrical balance duplexer) and the balancingnetwork 818 includes at least a variable resistor and at least onevariable capacitor. The common mode sensing circuit includes a pair ofresistors coupled across the secondary of the transformer. The portionof the SOC 812 includes a peak detector 820, a tuning engine 822, and alow noise amplifier module (LNA). Alternatively, the peak detector 820and/or the tuning engine 822 may be within the FEM 810.

In an example of operation, the PA 814 supplies an outbound RF signal tothe center tap of the dual winding primary of the transformer. Currentof the outbound RF signal is split between the two windings proportionalto the difference in impedance between the antenna and the balancingnetwork 818. If the impedance of the balancing network 818 substantiallymatches the impedance of the antenna, the current is essentially equallysplit between the two windings.

With the winding configuration as shown, if the currents in the primarywindings substantially match, their magnetic fields essential canceleach other in the secondary winding. Thus, the secondary has asubstantially attenuated representation of the outbound RF signal. Foran inbound RF signal, the two windings of the primary generate amagnetic corresponding to the current of the inbound RF signal. In thisinstance, the magnetic fields are added, thus producing twice thecurrent in the secondary than in the primary (assuming each of thewindings has the same number of turns). As such, the transformeramplifies the inbound RF signal.

If there is an imbalance between the impedance of the antenna and theimpedance of the balancing network 818, an outbound RF signal currentcomponent will be present in the secondary (e.g., TX leakage). Forexample, assume that the current through the winding to the inductor isi_(P1) and the current through the winding to the balance network 818 isi_(P2). The TX leakage can be expressed as i_(P1)−i_(P2). The resistorsof the common mode sensing circuit sense the TX leakage. For instance,the voltage at the center node of the resistors equalsVS−(R₁*2i_(R)+R₁*i_(P2)−R₂*i_(P1)), where VS is the voltage of thesecondary and 2i_(R) is the current from the received inbound RF signal.Assuming R₁=R₂ and i_(P1)=i_(P2), then the voltage at the center nodeequals ½ of VS. If, however, i_(P1) does not equal i_(P2), the voltageat the center node of the resistors will deviate from ½ VSproportionally to the difference.

The detector 820 detects the difference of the voltage at the centernode of the resistors from ½ VS and provides an indication of thedifference to the tuning engine 822. The tuning engine 822 interpretsthe difference and generates a control signal to adjust the impedance ofthe balance network. For example, if i_(P1) is greater than i_(P2), thenthe common mode voltage of the sensing circuit (e.g., the center node ofthe resistors) will be greater than ½ VS, which indicates that theimpedance of the balance network 818 is too high. As such, the tuningengine 822 generates a control signal that reduces the impedance of thebalance network 818. As another example, if i_(P1) is less than i_(P2),then the common mode voltage of the sensing circuit will be less than ½VS, which indicates that the impedance of the balance network is toolow. As such, the tuning engine 822 generates a control signal thatincreases the impedance of the balance network 818.

The tuning engine 822 may interpret the common mode voltage deviation,determine a desired impedance for the balance network 818, and generatea control signal accordingly. Alternatively, the tuning engine 822 mayiteratively generate control signals that adjust the impedance of thebalancing network 818 in steps until the desired impedance is achieved.With either approach, the tuning engine 822 functions to keep theimpedance of the balance network 818 substantially matching theimpedance of the antenna (which varies over time, use, and/orenvironmental conditions) to minimize TX leakage.

FIG. 91 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM 830) and an SOC 832. The portion ofthe FEM 830 includes a power amplifier module (PA 836), a duplexer 838,a balance network 842, an antenna tuning unit (ATU 840), and a commonmode sensing circuit. The duplexer 838 includes a transformer (or otherstructure such as a frequency selective duplexer 838 and/or anelectrical balance duplexer 838) and the balancing network includes atleast a variable resistor and at least one variable capacitor. Thecommon mode sensing circuit includes a pair of resistors coupled acrossthe secondary of the transformer. The portion of the SOC 832 includes apeak detector 848, a tuning engine 850, a look up table (LUT) 844, theprocessing module 846, and a low noise amplifier module (LNA 852).Alternatively, the peak detector 848 and/or the tuning engine 850 may bewithin the FEM 830.

In addition to the functionality provided by the common mode sensingcircuit (i.e., the resistors), the detector 848, the tuning engine 850,and the balance network 842 to balance the impendence of the balancenetwork 842 with the impedance of the antenna (as described withreference to FIG. 90), the FEM 830 includes the ATU 840. The ATU 840includes one or more fixed passive components and/or one or morevariable passive components. For example, the ATU 840 may include avariable capacitor-inductor circuit, a variable capacitor, a variableinductor, etc.

In an example of operation, the PA 836 provides an amplified outbound RFsignal to the duplexer 838, which may include a transformer thatfunctions as described with reference to FIG. 90. The duplexer 838outputs the amplified outbound RF signal to the ATU 840, which is tunedvia settings stored in the LUT 844 to provide a desired antenna matchingcircuit (e.g., impedance matching, quality factor, bandwidth, etc.). TheATU 840 outputs the outbound RF signal to the antenna for transmission.

For an inbound RF signal, the antenna receives the signal and providesit to the ATU 840, which in turn provides it to the duplexer 838. Theduplexer 838 outputs the inbound RF signal to the LNA 852 and the commonmode sensing circuit. The common mode sensing circuit, the detector 848,the tuning engine 850, and the balance network 842 functions aspreviously described with reference to FIG. 90.

The processing module 846 is operable to monitor various parameters ofthe FEM 830. For instance, the processing module 846 may monitor theantenna impedance, the transmit power, the performance of the PA 836(e.g., gain, linearity, bandwidth, efficiency, noise, output dynamicrange, slew rate, rise rate, settling time, overshoot, stability factor,etc.), received signal strength, SNR, SIR, adjustments made by thetuning engine 850, etc. The processing module 846 interprets theparameters to determine if performance of the FEM 830 may be furtheroptimized. For example, the processing module 846 may determine that anadjustment to the ATU 840 will improve PA 836 performance. In this case,the processing module 846 addresses the LUT 844 to provide a desiredsetting to the ATU 840. If this change in the ATU 840 affects theimpedance balance between the ATU 840 and the balance network 842, thetuning engine 850 makes an appropriate adjustment.

In an alternate embodiment, the processing module 846 provides thefunctionality of the tuning engine 850 and balances adjustments to theATU 840 and to the balance network 842 to achieve a desired performanceof the FEM 830. In yet another alternate embodiment, the balance network842 is fixed and the ATU 840 provides the desired adjusts in the FEM 830to achieve impedance balance and to achieve the desired performance ofthe FEM 830.

FIG. 92 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM 860) and an SOC 862 for 2G and 3Gcellular telephone operations. The portion of the FEM 860 includes apower amplifier module (PA 866), a duplexer, a balance network, and acommon mode sensing circuit. The duplexer includes a transformer (orother structure such as a frequency selective duplexer and/or anelectrical balance duplexer) and the balancing network includes aswitch, at least a variable resistor, and at least one variablecapacitor. The common mode sensing circuit includes a pair of resistorscoupled across the secondary of the transformer. The portion of the SOC862 includes a peak detector 872, a tuning engine 874, a switch, and alow noise amplifier module (LNA 876). Alternatively, the peak detector872 and/or the tuning engine 874 may be within the FEM 860.

In this embodiment, the duplexer is optimized for frequency divisionduplex (FDD), which is used in 3G cellular telephone applications andthe balancing network switch and the LNA 876 switch are open. In timedivision duplex (TDD), which is used in 2G cellular telephoneapplications, the balancing network is shorted via the switch. Thisessentially removes the 3-dB theoretical insertion loss limit and leavesjust implementation loss. Note that for 2G transmissions, the LNA 876switch is closed and, for 2G receptions, the LNA 876 switch is open.Further note that for 3G mode, the FEM and SOC 862 function aspreviously discussed with reference to FIGS. 90 and/or 91.

FIG. 93 is a schematic block diagram of an embodiment of a portion ofeach of a front-end module (FEM 860) and an SOC 862 of FIG. 92 in 2G TXmode. In the mode, the LNA 876 switch shorts the LNA 876 and the balancenetwork switch shorts the balance network. With a short across thesecondary winding, the primary windings are essentially shorted. Thus,the PA 866 is effectively directly coupled to the antenna.

FIG. 94 is a schematic block diagram of an embodiment of a portion ofeach of a front-end module (FEM 860) and an SOC 862 of FIG. 92 in 2G RXmode. In this mode, the LNA switch is open and the balance networkswitch is closed, thus shorting the balance network. In thisconfiguration, the transformer is function as a transformer balun forthe receiver section.

FIG. 95 is a schematic block diagram of an embodiment of a small signalbalancing network 880 that includes a plurality of transistors,plurality of resistors, and a plurality of capacitors. The selection ofresistors to include in the balance network may be controlled by amulti-bit signal (e.g., 10 bits) and the selection of capacitors toinclude in the balance network may be controlled by another multi-bitsignal (e.g., 5 bits).

For example, if the resistor side of the balance network includes fourresistor-transistor circuits, wherein the common node of the one of theresistor-transistor circuits is coupled to the gate of the precedingresistor-transistor circuits. In this example, each of the gates also iscoupled to receive a bit of a 4-bit control signal. For instance, thegate of the left outer-most resistor-transistor circuit receives themost significant bit, the gate of the next left most resistor-transistorcircuit receives the next most significant bit, and so on. Further, theresistor of the left most resistor-transistor circuit is R4, theresistor of the next left most resistor-transistor circuit is R3, and soon. Thus, for this example, when the 4-bit control signal is 0001, onlythe right most resistor transistor circuit is on and its resistor, R1,provides the resulting resistance. When the 4-bit control signal is0011, the two right most resistor-transistor circuits are on and theresulting resistance is R1//R2. When the 4-bit control signal is 0111,the three right most resistor-transistor circuits are on and theresulting resistance is R1//R2//R3. When the 4-bit control signal is1111, all four resistor-transistor circuits are on and the resultingresistance is R1//R2//R3//R4. The capacitor side of the balance networkfunctions in a similar manner.

As an alternative embodiment, each resistor-transistor circuit and eachcapacitor-transistor circuit may be independently controlled by a bit ofthe corresponding control signals. For a four resistor-transistorcircuit configuration as described in the preceding paragraph asmodified herein, a control signal of 1000 would yield a resistance ofR4; a control signal of 0100 would yield a resistance of R3; a controlsignal of 1010 would yield a resistance of R4//R2; and so on.

FIG. 96 is a schematic block diagram of an embodiment of a large signalbalancing network 882 that includes an RLC (resistor-inductor-capacitor)network and a plurality of transistors. The transistors are gated on andoff to provide different combinations of resistors, inductors, and/orcapacitors of the RIC network to provide the desired impedance of thebalance network. In this instance, the transistors have a relativelysmall voltage swing, and thus lower voltage transistors can be used.

FIG. 97 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM 890) and an SOC 892. The portion ofthe FEM 890 includes a power amplifier module (PA 896), a duplexer 898,a balance network 900, and a common mode sensing circuit. The duplexer898 includes a transformer (or other structure such as a frequencyselective duplexer 898 and/or an electrical balance duplexer 898) andthe balancing network includes at least a variable resistor and at leastone variable capacitor. The common mode sensing circuit includes a pairof resistors coupled across the secondary of the transformer. Theportion of the SOC includes a peak detector 902, a tuning engine 904, aleakage detection 906 module, and a low noise amplifier module (LNA908). Alternatively, the peak detector 902, the leakage detection 906module, and/or the tuning engine 904 may be within the FEM 890.

This embodiment functions similarly to the embodiment of FIG. 90 withthe inclusion of the leakage detection 906 module. The leakage modulefunctions to detect variations of the transistor on-resistance of thecircuits within the balance network 900 in accordance with the PA 896output. For instance, as the PA 896 output increases, it causes theon-resistance of the transistors within the balance network 900 tochange. Such changes affect the overall impedance of the balance network900. Accordingly, the leakage detection 906 module detects theon-resistance changes and provides a representative signal to the tuningengine 904 and/or the processing module (as shown in FIG. 91).

Based on the input for the leakage detection 906 module, the tuningengine 904 adjusts the impedance of the balance network 900.Alternatively, or in addition to, the processing module uses the inputfrom the leakage detection 906 module to adjust the setting of the ATU.Regardless of the particular method, variations in on-resistance of thetransistors in the balance network 900 and/or of the transistors in thepower amplifier are compensated.

FIG. 98 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM 910) and an SOC 912. The portion ofthe FEM 910 includes a power amplifier module (PA 916), a duplexer 918,a balance network 920, and a common mode sensing circuit. The duplexer918 includes a transformer (or other structure such as a frequencyselective duplexer 918 and/or an electrical balance duplexer 918) andthe balancing network includes at least a variable resistor and at leastone variable capacitor. The common mode sensing circuit includes a pairof resistors coupled across the secondary of the transformer. Theportion of the SOC 912 includes a peak detector 922, a processing module926 (which includes the function of the tuning engine), and a low noiseamplifier module (LNA 924). Alternatively, the peak detector 922 and/orthe tuning engine may be within the FEM 910.

This embodiment functions similar to that of FIG. 90 with the ability toadjust the TX attenuation and/or RX gain of the duplexer 918. Forinstance, when the transmit power is relatively low (e.g., is a smallerblocker for the inbound RF signal and/or in the signal strength of theinbound RF signal is relatively high), the processing module 926provides a signal to the duplexer 918 such that the duplexer 918 reducesthe TX attenuation, thereby reducing insertion loss.

In an example, if the duplexer 918 includes the transformer of FIG. 90,and/or other type of frequency-selective duplexer 918, part of thefilter can be shorted to improve the loss at the expense of lessisolation. In another example, if the duplexer 918 includes anelectrical-balance duplexer, the isolation can be traded-off forisolation from the balancing network.

FIG. 99 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM 930) and an SOC 932. The portion ofthe FEM 930 includes a power amplifier module (PA 936), a duplexer 938,and a balance network 940. The duplexer 938 includes a transformer (orother structure such as a frequency selective duplexer 938 and/or anelectrical balance duplexer 938), parasitic capacitance, andcompensating capacitors, and the balancing network includes at least avariable resistor and at least one variable capacitor. The portion ofthe SOC 932 includes a peak detector, a processing module (whichincludes the function of the tuning engine), and a low noise amplifiermodule (LNA 940). Only the LNA 940 is shown.

In this embodiment, the compensation capacitors are added to compensatefor mismatches of the parasitic capacitances (e.g., Cp1 and Cp2), whichmay result due to a mismatch between the windings of the primary (e.g.,L1 and L2). As such, the compensating capacitors (Cc1 and Cc2) areselected such that Cp1+Cc1=Cp2+Cc2. By adding the compensationcapacitors, the isolation bandwidth of the duplexer 938 is greater thanwithout the compensation capacitors.

FIG. 100 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM 950) and an LNA 952. The portion ofthe FEM 950 includes the power amplifier module (PA 954), the duplexer956, and the balance network 958. The duplexer 956 includes thetransformer (or other structure such as a frequency selective duplexerand/or an electrical balance duplexer 956), which has parasiticcapacitance (Cp3 and Cp4). The LNA 952 includes input transistors, whichhave parasitic capacitance (Cp), bias transistors, an inductor (L3), andload impedances (Z). With the inclusion of L3 in the LNA 952, commonmode isolation of the duplexer 956 and LNA 952 is improved in comparisonwith conventional LNA 952 input configurations.

FIG. 101 is a schematic block diagram of an embodiment of an equivalentcircuit of a portion of each of a front-end module (FEM) and an LNA ofFIG. 100. This diagram illustrates how the common mode isolation isimproved. Imbalanced currents coupled to the secondary winding (L) bythe transformer's parasitic capacitance (Cp3 and Cp4), are coupled toseparate tank circuits formed by the inductor (L3) and the parasiticcapacitance of the input transistors. The tank circuits provide a highdifferential impedance, but a low common mode impedance.

FIG. 102 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM 960) and an SOC 962. The portion ofthe FEM 960 includes a power amplifier module (PA), a duplexer, abalance network 970, and a common mode sensing circuit. The duplexerincludes a transformer (or other structure such as a frequency selectiveduplexer and/or an electrical balance duplexer) and the balancingnetwork includes at least a variable resistor and at least one variablecapacitor. The common mode sensing circuit includes a pair of resistorscoupled across the secondary of the transformer. The portion of the SOC962 includes a peak detector 974, a processing module 976 (whichperforms the function of the tuning engine), and a single-ended lownoise amplifier module (LNA 972). Alternatively, the peak detector 974and/or the tuning engine may be within the FEM 960.

In this embodiment, the common-mode isolation is substantiallyeliminated by the use of a single-ended LNA 972. The other components ofthe FEM 960 and SOC 962 shown in this figure function as previouslydiscussed.

FIG. 103 is a schematic block diagram of an embodiment of a transformerof the duplexer. The transformer includes the primary windings (L1 & L2)and a secondary winding (L2). The primary windings each have the samenumber of turns; the secondary winding may have the same number of turnsas a primary winding or different number of turns. The orientation ofthe windings is as shown.

FIG. 104 is a diagram of an example of an implementation of atransformer implemented on 4 thick metal layers of an integratedcircuit, of an IC packaging substrate, and/or on a printed circuitboard. The primary windings are on the top two layers and the secondarywinding is on the two lower layers. A first winding of the secondary onone layer may be connected in series or in parallel with the otherwinding of the secondary on the other layer.

FIG. 105 is a diagram of another example of an implementation of atransformer on 3 thick metal layers of an IC, of an IC packagesubstrate, and/or of a printed circuit board. The primary windings areon the top layer and use the next layer for interconnections. One orboth of the primary windings may be rotated by 90°. The secondarywinding is on the third lower layers.

FIG. 106 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM 990) and an SOC 992. The portion ofthe FEM 990 includes a power amplifier module (PA 994), a duplexer 996,a balance network 1000, a tone injection 998 module, and a common modesensing circuit. The duplexer 996 includes a transformer (or otherstructure such as a frequency selective duplexer 996 and/or anelectrical balance duplexer 996) and the balancing network includes atleast a variable resistor and at least one variable capacitor. Thecommon mode sensing circuit includes a pair of resistors coupled acrossthe secondary of the transformer. The portion of the SOC k includes apeak detector 1002, a processing module 1004 (which performs thefunction of the tuning engine), a baseband processing unit, and a lownoise amplifier module (LNA 1006). Alternatively, the peak detector 1002and/or the tuning engine may be within the FEM 990.

In an example of operation, the common mode sensing circuit, the tuningengine, the detector 1002 and the balance network 1000 function aspreviously discussed. In many instances, these components reduce thetransmitter (TX) and/or receiver (RX) noise in the receiver band belowor comparable to the noise floor of the LNA 1006. With the TX and/or RXnoise at or below the noise floor, it is difficult to track, which makesit difficult to track the impedance of the antenna.

To improve the tracking of the antenna impedance, the tone injection 998module injects a tone in the receiver frequency band (e.g., A cos(ω_(RX)_(—) _(RF)(t)). The duplexer 996 attenuates the RX tone differently thana TX signal because it is in the RX band and the duplexer 996 andbalance network 1000 are tuned for the TX band. As such, a readilydetectable leakage signal is produced on the RX side of the duplexer 996(e.g., on the secondary of the transformer).

The RX tone-based leakage signal is propagated through the receiversection until it is converted into a baseband signal. At baseband, thetone amplitude is a measure of the RX band isolation. From the measureof RX band isolation, the antenna's impedance can be determined. As theantenna impedance changes, the antenna tuning unit and/or the balancenetwork 1000 may be adjusted to track the antenna's impedance. Note thatthe tone may be easily removed at baseband.

FIG. 107 is a schematic block diagram of another embodiment of a portionof each of a front-end module (FEM 1010) and an SOC 1012. The portion ofthe FEM 1010 includes a power amplifier module (PA 1014), a duplexer1016, a balance network 1018, and a common mode sensing circuit (notshown). The duplexer 1016 includes a transformer (or other structuresuch as a frequency selective duplexer 1016 and/or an electrical balanceduplexer 1016). The common mode sensing circuit includes a pair ofresistors coupled across the secondary of the transformer. The portionof the SOC 1012 includes a peak detector 1002 (not shown), a processingmodule 1020 (which performs the function of the tuning engine), and alow noise amplifier module (LNA 1022). Alternatively, the peak detector1002 and/or the tuning engine may be within the FEM 1010.

The balance network 1018 includes an RLC network having a plurality ofvariable resistors, a plurality of variable capacitors, and at least oneinductor. In this embodiment, the balance network 1018 can be tuned toprovide a wide variety of impedance to enable a better matching to theimpedance of the antenna.

FIG. 108 is a schematic block diagram of an embodiment of an impedanceof a resistor-transistor (R-T) circuit of a balance network. Thecapacitor corresponds to the parasitic capacitance of the transistor.Because the R-T circuit includes a real passive resistor, it contributesto the 3 dB theoretical limit on insertion loss.

FIG. 109 is a schematic block diagram of another embodiment of animpedance of a resistor-transistor (R-T) circuit of the balance network.In this embodiment, the R-T circuit includes an inductively degeneratedcommon-source transistor. As such, it is an active resistance and doesnot contribute to the 3 dB theoretical limit on insertion loss. Thus,the only loss due to the balance network is implementation loss.

FIG. 110 is a schematic block diagram of an embodiment of a balancenetwork 1030 that includes an impedance up-converter 1032 and one ormore baseband impedances (Zbb 1034). The impedance up-converter isclocked at a desired frequency (e.g., f_(LO) or f_(RF)). The combinationof the impedance up-converter 1032 and the baseband impedance may beimplemented in a similar fashion as an m-phase frequency translatedbandpass filter as previously discussed.

FIG. 111 is a schematic block diagram of another embodiment of a balancethat includes two impedance up-converters 1042, 1044 and correspondingbaseband impedances (Zbb 1046, 1048). Each of the impedanceup-converters is clocked at a desired frequency (e.g., f_(RF) _(—) _(TX)and f_(RF) _(—) _(RX)). Each of the combinations of an impedanceup-converter 1042, 1044 and one or more baseband impedances may beimplemented in a similar fashion as an m-phase frequency translatedbandpass filter as previously discussed.

FIG. 112 is a schematic block diagram of an embodiment of a negativeimpedance 1050 for use in the balance network. The circuit includes abaseband negative impedance 1050 circuit, such as the one shown in FIG.56 and the impedance up-converter 1052 may be implemented in a similarfashion as an m-phase frequency translated bandpass filter as previouslydiscussed.

FIG. 113 is a schematic block diagram of an embodiment of a polarreceiver 1060 that includes a phase locked loop (PLL 1068), analog todigital converts (ADC 1064, 1066), a phase processing module 1062, apeak detector 1070, and an amplitude processing module 1062. The PLL1068 includes a phase and frequency detector (PFD), a charge pump, aloop filter, a voltage controlled oscillator (VCO), a divider (which maybe a 1:1 divider), summing module, and a sigma-delta module.

In an example of operation, the antenna receives an inbound RF signal(e.g., A(t) cos(ω_(RF)(t)+θ(t))) and provides it through an FEM (notshown) to the PLL 1068 and the peak detector 1070 of the receiversection. The peak detector 1070, which may be an envelope detector,isolates the amplitude term (e.g., A(t)). The amplitude term is thenconverted to a digital signal via the ADC 1064, 1066. The PLL 1068processes the cos(ω_(RF)(t)+θ(t)) of the inbound RF signal to extractthe phase information (e.g., θ(t)). The processing module 1062interprets the amplitude information and the phase information toreconstruct the transmitted data.

FIG. 114 is a schematic block diagram of an embodiment of a buffercircuit that may be used to couple the PLL 1082 of the local oscillatorto the mixers of the down-conversion mixing module and/or to theup-conversion mixing module. The buffer circuit includes a differentialbuffer and a weaved connection 1086. The weaved connection 1086introduces an increased inductance (in comparison to parallel traces)that attenuates undesired high frequency components from being presentedto the mixers. Further, the size and shape of the weaved connection 1086may be selected to obtain a desired capacitance between the traces toproduce a tuned and distributed L-C circuit.

FIG. 115 is a schematic block diagram of an embodiment of a weavedconnection 1100 that has a first trace on one layer of a substrate(e.g., die, package substrate, etc.) and another trace on another layerof the substrate. The traces may be interleaved on the two layers toimprove magnetic coupling therebetween. Further, one or more of thetraces may include an inductive loop to increase its inductance.

FIG. 116 is a schematic block diagram of an embodiment of a receiverthat includes an input section, a down-conversion mixing section, andtransimpedance amplifiers (TIA 1126, 1128). The input section includesthe MN 1112, the gain module, inductors, and capacitors. Thedown-conversion mixing section includes mixers and a local oscillator.Each of the TIAs 1126, 1128 includes transistors and resistors coupledas shown. Note that the positive input may also be coupled to the commonnode between the resistor and the transistor on the positive output legand the negative input may also be coupled to the common node betweenthe resistor and the transistor on the negative output leg.

As may be used herein, the terms “substantially” and “approximately”provides an industry-accepted tolerance for its corresponding termand/or relativity between items. Such an industry-accepted toleranceranges from less than one percent to fifty percent and corresponds to,but is not limited to, component values, integrated circuit processvariations, temperature variations, rise and fall times, and/or thermalnoise. Such relativity between items ranges from a difference of a fewpercent to magnitude differences. As may also be used herein, theterm(s) “operably coupled to”, “coupled to”, and/or “coupling” includesdirect coupling between items and/or indirect coupling between items viaan intervening item (e.g., an item includes, but is not limited to, acomponent, an element, a circuit, and/or a module) where, for indirectcoupling, the intervening item does not modify the information of asignal but may adjust its current level, voltage level, and/or powerlevel. As may further be used herein, inferred coupling (i.e., where oneelement is coupled to another element by inference) includes direct andindirect coupling between two items in the same manner as “coupled to”.As may even further be used herein, the term “operable to” or “operablycoupled to” indicates that an item includes one or more of powerconnections, input(s), output(s), etc., to perform, when activated, oneor more its corresponding functions and may further include inferredcoupling to one or more other items. As may still further be usedherein, the term “associated with”, includes direct and/or indirectcoupling of separate items and/or one item being embedded within anotheritem. As may be used herein, the term “compares favorably”, indicatesthat a comparison between two or more items, signals, etc., provides adesired relationship. For example, when the desired relationship is thatsignal 1 has a greater magnitude than signal 2, a favorable comparisonmay be achieved when the magnitude of signal 1 is greater than that ofsignal 2 or when the magnitude of signal 2 is less than that of signal1.

While the transistors in the above described figure(s) is/are shown asfield effect transistors (FETs), as one of ordinary skill in the artwill appreciate, the transistors may be implemented using any type oftransistor structure including, but not limited to, bipolar, metal oxidesemiconductor field effect transistors (MOSFET), N-well transistors,P-well transistors, enhancement mode, depletion mode, and zero voltagethreshold (VT) transistors.

The present invention has also been described above with the aid ofmethod steps illustrating the performance of specified functions andrelationships thereof. The boundaries and sequence of these functionalbuilding blocks and method steps have been arbitrarily defined hereinfor convenience of description. Alternate boundaries and sequences canbe defined so long as the specified functions and relationships areappropriately performed. Any such alternate boundaries or sequences arethus within the scope and spirit of the claimed invention.

The present invention has been described, at least in part, in terms ofone or more embodiments. An embodiment of the present invention is usedherein to illustrate the present invention, an aspect thereof, a featurethereof, a concept thereof, and/or an example thereof. A physicalembodiment of an apparatus, an article of manufacture, a machine, and/orof a process that embodies the present invention may include one or moreof the aspects, features, concepts, examples, etc. described withreference to one or more of the embodiments discussed herein.

The present invention has been described above with the aid offunctional building blocks illustrating the performance of certainsignificant functions. The boundaries of these functional buildingblocks have been arbitrarily defined for convenience of description.Alternate boundaries could be defined as long as the certain significantfunctions are appropriately performed. Similarly, flow diagram blocksmay also have been arbitrarily defined herein to illustrate certainsignificant functionality. To the extent used, the flow diagram blockboundaries and sequence could have been defined otherwise and stillperform the certain significant functionality. Such alternatedefinitions of both functional building blocks and flow diagram blocksand sequences are thus within the scope and spirit of the claimedinvention. One of average skill in the art will also recognize that thefunctional building blocks, and other illustrative blocks, modules andcomponents herein, can be implemented as illustrated or by discretecomponents, application specific integrated circuits, processorsexecuting appropriate software and the like or any combination thereof.

1. A front-end module (FEM) comprises: a first frequency band poweramplifier (PA) operable to amplify a first frequency band outbound radiofrequency (RF) signal; a second frequency band PA operable to amplify asecond frequency band outbound RF signal; a first frequency bandreceiver-transmitter (RX-TX) isolation module operable to isolate afirst frequency band inbound RF signal from the first frequency bandoutbound RF signal in accordance with a first frequency band isolationtuning signal; a second frequency band RX-TX isolation module operableto isolate a second frequency band inbound RF signal from the secondfrequency band outbound RF signal in accordance with a second frequencyband isolation tuning signal; and an antenna interface unit operablytuned in accordance with an antenna interface tuning signal to: outputat least one of the first frequency band outbound RF signal and thesecond frequency band outbound RF signal; and receive at least one ofthe first frequency band inbound RF signal and the second frequency bandinbound RF signal.
 2. The FEM of claim 1, wherein each of the first andsecond RX-TX isolation modules comprises: a duplexer operable to:isolate the first frequency band inbound RF signal from the firstfrequency outbound RF signal; or isolate the second frequency bandinbound RF signal from the second frequency outbound RF signal; abalance network operable to adjust impedance of the first or secondRX-TX isolation module based on the first or second frequency bandisolation tuning signal; and a common mode sensing circuit operable togenerate a transmit leakage indication signal, wherein the first orsecond frequency band isolation tuning signal is generated based on thetransmit leakage indication signal.
 3. The FEM of claim 2, wherein theduplexer comprises: a transformer having two primary windings and asecondary winding, wherein the two primary windings are seriallyconnected, a common node of the serially connected primary windings iscoupled to the first or second PA, another node of a first of the twoprimary windings is coupled to the antenna interface unit, and anothernode of a second of the primary windings is coupled to the balancenetwork, and wherein the secondary winding is coupled to a low noiseamplifier port.
 4. The FEM of claim 1, wherein the antenna interfaceunit comprises: a first frequency band antenna tuning unit operablytuned in accordance with the antenna interface tuning signal to providea first desired antenna matching when the first frequency inbound RFsignal is received or when the first frequency outbound RF signal istransmitted; a second frequency band antenna tuning unit operably tunedin accordance with the antenna interface tuning signal to provide asecond desired antenna matching when the second frequency inbound RFsignal is received or when the second frequency outbound RF signal istransmitted; and a frequency band switch operably coupled to: couple thefirst frequency band antenna tuning unit to an antenna when the firstfrequency inbound RF signal is received or when the first frequencyoutbound RF signal is transmitted; and couple the second frequency bandantenna tuning unit to the antenna when the second frequency inbound RFsignal is received or when the second frequency outbound RF signal istransmitted.
 5. The FEM of claim 1, wherein the antenna interface unitcomprises: an antenna tuning unit operably tuned in accordance with theantenna interface tuning signal to: provide a first desired antennamatching when the first frequency inbound RF signal is received or whenthe first frequency outbound RF signal is transmitted; and provide asecond desired antenna matching when the second frequency inbound RFsignal is received or when the second frequency outbound RF signal istransmitted.
 6. The FEM of claim 1 further comprises: a first frequencyband impedance operably coupled to an output of the first frequency bandPA; a first frequency band filter operably coupled to the firstfrequency band impedance; first frequency band RX-TX isolation by-passswitches operably coupled to: in a first mode, couple the firstfrequency band filter to the first frequency band RX-TX isolation moduleand couple the first frequency band RX-TX isolation module to theantenna interface unit; and in a second mode, couple the first frequencyband filter to the antenna interface unit; a second frequency bandimpedance operably coupled to an output of the second frequency band PA;a second frequency band filter operably coupled to the second frequencyband impedance; and second frequency band RX-TX isolation by-passswitches operably coupled to: in a third mode, couple the secondfrequency band filter to the second frequency band RX-TX isolationmodule and couple the second frequency band RX-TX isolation module tothe antenna interface unit; and in a fourth mode, couple the secondfrequency band filter to the antenna interface unit.
 7. The FEM of claim1 further comprises: a first frequency band impedance operably coupledto an output of the first frequency band PA; a first frequency bandfilter; a first frequency band RX-TX isolation by-pass switches operablycoupled to: in a first mode, couple the first frequency band impedanceto the first frequency band RX-TX isolation module and couple the firstfrequency band RX-TX isolation module to the antenna interface unit; andin a second mode, couple the first frequency band filter to the firstfrequency band impedance and to the antenna interface unit; a secondfrequency band impedance operably coupled to an output of the secondfrequency band PA; a second frequency band filter; and a secondfrequency band RX-TX isolation by-pass switches operably coupled to: ina third mode, couple the second frequency band impedance to the secondfrequency band RX-TX isolation module and couple the second frequencyband RX-TX isolation module to the antenna interface unit; and in afourth mode, couple the second frequency band filter to the secondfrequency band impedance and to the antenna interface unit.
 8. The FEMof claim 1 further comprises: an FEM control signal port operable toreceive at least one of the first frequency band isolation tuningsignal, the second frequency band isolation tuning signal, and theantenna interface tuning signal; and an FEM monitor port operable tooutput at least one of a first frequency band transmit leakageindication signal and a second frequency band transmit leakageindication signal.
 9. A wireless communication device chip setcomprises: a front-end module (FEM) IC including: a first frequency bandpower amplifier (PA) operable to amplify a first frequency band outboundradio frequency (RF) signal; a second frequency band PA operable toamplify a second frequency band outbound RF signal; a first frequencyband receiver-transmitter (RX-TX) isolation module operable to isolate afirst frequency band inbound RF signal from the first frequency bandoutbound RF signal in accordance with a first frequency band isolationtuning signal; a second frequency band RX-TX isolation module operableto isolate a second frequency band inbound RF signal from the secondfrequency band outbound RF signal in accordance with a second frequencyband isolation tuning signal; and an antenna interface unit operablytuned in accordance with an antenna interface tuning signal to: outputat least one of the first frequency band outbound RF signal and thesecond frequency band outbound RF signal; and receive at least one ofthe first frequency band inbound RF signal and the second frequency bandinbound RF signal; and a first integrated circuit (IC) including: afirst low noise amplifier (LNA) operable to amplify the first frequencyband inbound RF signal; a second LNA operable to amplify the secondfrequency band inbound RF signal; and a processing module operable to:generate the first frequency band isolation tuning signal; generate thesecond frequency band isolation tuning signal; and generate the antennainterface tuning signal.
 10. The wireless communication device chip setof claim 9 further comprises: each of the first and second RX-TXisolation modules including: a duplexer operable to: isolate the firstfrequency band inbound RF signal from the first frequency outbound RFsignal; or isolate the second frequency band inbound RF signal from thesecond frequency outbound RF signal; a balance network operable toadjust impedance of the first or second RX-TX isolation module based onthe first or second frequency band isolation tuning signal; and a commonmode sensing circuit operable to generate a transmit leakage indicationsignal; and wherein the processing module generates the first or secondfrequency band isolation tuning signal based on the transmit leakageindication signal.
 11. The wireless communication device chip set ofclaim 10, wherein the duplexer comprises: a transformer having twoprimary windings and a secondary winding, wherein the two primarywindings are serially connected, a common node of the serially connectedprimary windings is coupled to the first or second PA, another node of afirst of the two primary windings is coupled to the antenna interfaceunit, and another node of a second of the primary windings is coupled tothe balance network, and wherein the secondary winding is coupled to alow noise amplifier port.
 12. The wireless communication device chip setof claim 9 further comprises: the antenna interface unit including: afirst frequency band antenna tuning unit operably tuned in accordancewith the antenna interface tuning signal to provide a first desiredantenna matching when the first frequency inbound RF signal is receivedor when the first frequency outbound RF signal is transmitted; a secondfrequency band antenna tuning unit operably tuned in accordance with theantenna interface tuning signal to provide a second desired antennamatching when the second frequency inbound RF signal is received or whenthe second frequency outbound RF signal is transmitted; and a frequencyband switch operably coupled to: couple the first frequency band antennatuning unit to an antenna when the first frequency inbound RF signal isreceived or when the first frequency outbound RF signal is transmitted;and couple the second frequency band antenna tuning unit to the antennawhen the second frequency inbound RF signal is received or when thesecond frequency outbound RF signal is transmitted; and wherein theprocessing module is further operable to: generate the antenna interfacetuning signal to provide the first desired antenna matching inaccordance with first frequency band parameters of the FEM IC when thefirst frequency inbound RF signal is received or when the firstfrequency outbound RF signal is transmitted; and generate the antennainterface tuning signal to provide the second desired antenna matchingin accordance with second frequency band parameters of the FEM IC whenthe second frequency inbound RF signal is received or when the secondfrequency outbound RF signal is transmitted.
 13. The wirelesscommunication device chip set of claim 9 further comprises: the antennainterface unit including: an antenna tuning unit operably tuned inaccordance with the antenna interface tuning signal to: provide a firstdesired antenna matching when the first frequency inbound RF signal isreceived or when the first frequency outbound RF signal is transmitted;and provide a second desired antenna matching when the second frequencyinbound RF signal is received or when the second frequency outbound RFsignal is transmitted; and wherein the processing module is furtheroperable to: generate the antenna interface tuning signal to provide thefirst desired antenna matching in accordance with first frequency bandparameters of the FEM IC when the first frequency inbound RF signal isreceived or when the first frequency outbound RF signal is transmitted;and generate the antenna interface tuning signal to provide the seconddesired antenna matching in accordance with second frequency bandparameters of the FEM IC when the second frequency inbound RF signal isreceived or when the second frequency outbound RF signal is transmitted.14. The wireless communication device chip set of claim 9 furthercomprises: the FEM IC further including: a first frequency bandimpedance operably coupled to an output of the first frequency band PA;a first frequency band filter operably coupled to the first frequencyband impedance; first frequency band RX-TX isolation by-pass switchesoperably coupled to: in a first mode, couple the first frequency bandfilter to the first frequency band RX-TX isolation module and couple thefirst frequency band RX-TX isolation module to the antenna interfaceunit; and in a second mode, couple the first frequency band filter tothe antenna interface unit; a second frequency band impedance operablycoupled to an output of the second frequency band PA; a second frequencyband filter operably coupled to the second frequency band impedance; andsecond frequency band RX-TX isolation by-pass switches operably coupledto: in a third mode, couple the second frequency band filter to thesecond frequency band RX-TX isolation module and couple the secondfrequency band RX-TX isolation module to the antenna interface unit; andin a fourth mode, couple the second frequency band filter to the antennainterface unit; and wherein the processing module is further operableto: enable the first mode when gain adjustment of the first frequencyband outbound RF signal is desired; enable the second mode when the gainadjustment of the first frequency band outbound RF signal is notdesired; enable the third mode when gain adjustment of the secondfrequency band outbound RF signal is desired; and enable the fourth whenthe gain adjustment of the second frequency band outbound RF signal isnot desired.
 15. The wireless communication device chip set of claim 9further comprises: the FEM IC further including: a first frequency bandimpedance operably coupled to an output of the first frequency band PA;a first frequency band filter; first frequency band RX-TX isolationby-pass switches operably coupled to: in a first mode, couple the firstfrequency band impedance to the first frequency band RX-TX isolationmodule and couple the first frequency band RX-TX isolation module to theantenna interface unit; and in a second mode, couple the first frequencyband filter to the first frequency band impedance and to the antennainterface unit; a second frequency band impedance operably coupled to anoutput of the second frequency band PA; a second frequency band filter;and second frequency band RX-TX isolation by-pass switches operablycoupled to: in a third mode, couple the second frequency band impedanceto the second frequency band RX-TX isolation module and couple thesecond frequency band RX-TX isolation module to the antenna interfaceunit; and in a fourth mode, couple the second frequency band filter tothe second frequency band impedance and to the antenna interface unit;and wherein the processing module is further operable to: enable thefirst mode when gain adjustment of the first frequency band outbound RFsignal is desired; enable the second when the gain adjustment of thefirst frequency band outbound RF signal is not desired; enable the thirdmode when gain adjustment of the second frequency band outbound RFsignal is desired; and enable the fourth when the gain adjustment of thesecond frequency band outbound RF signal is not desired.
 16. Thewireless communication device chip set of claim 9, wherein the first ICfurther comprises: a surface acoustic wave (SAW)-less receiver sectionthat includes the first and second frequency band LNAs; a SAW-lesstransmitter section operably coupled to generate the first and secondfrequency band outbound RF signals.